公开(公告)号：EP3166883A4

公开(公告)日：2018-01-10

申请号：EP15818451

申请日：2015-07-06

Applicant: INVENSENSE INC

Inventor： SMEYS PETER

IPC: B81C1/00

CPC classification number: B81C1/00238 ,  B81B7/02 ,  B81C1/00246 ,  B81C2201/0197 ,  B81C2203/0792

Abstract: A method of providing a CMOS-MEMS structure is disclosed. The method comprises patterning a first top metal on a MEMS actuator substrate and a second top metal on a CMOS substrate. Each of the MEMS actuator substrate and the CMOS substrate include an oxide layer thereon. The method includes etching each of the oxide layers on the MEMS actuator substrate and the base substrate, utilizing a first bonding step to bond the first patterned top metal of the MEMS actuator substrate to the second patterned top metal of the base substrate. Finally the method includes etching an actuator layer into the MEMS actuator substrate and utilizing a second bonding step to bond the MEMS actuator substrate to a MEMS handle substrate.

公开(公告)号：EP3228583A1

公开(公告)日：2017-10-11

申请号：EP15866031.6

申请日：2015-08-20

Applicant: CSMC Technologies Fab1 Co., Ltd.

Inventor： JING, Errong

IPC: B81B7/02 ,  B81C1/00

CPC classification number: B81B7/02 ,  B81B2201/0278 ,  B81B2203/0118 ,  B81C1/00 ,  B81C1/0015 ,  B81C2201/0197 ,  G01J1/04 ,  G01J1/42 ,  G01J5/024 ,  G01J5/0853

Abstract: A method for manufacturing a MEMS double-layer suspension microstructure comprises steps of: forming a first film body (310) on a substrate (100), and a cantilever beam (320) connected to the substrate (100) and the first film body (310); forming a sacrificial layer (400) on the first film body (310) and the cantilever beam (320); patterning the sacrificial layer (400) located on the first film body (310) to manufacture a recessed portion (410) used for forming a support structure (520), the bottom of the recessed portion (410) being exposed of the first film body (310); depositing a dielectric layer (500) on the sacrificial layer (400); patterning the dielectric layer (500) to manufacture a second film body (510) and the support structure (520), the support structure (520) being connected to the first film body (310) and the second film body (510); and removing the sacrificial layer (400) to obtain the MEMS double-layer suspension microstructure.

Abstract translation: 一种制造MEMS双层悬浮微结构的方法包括以下步骤：在衬底（100）上形成第一膜体（310）;以及连接到衬底（100）和第一膜体（100）的悬臂梁（320） 310）; 在所述第一膜体（310）和所述悬臂梁（320）上形成牺牲层（400）; 图案化位于第一膜体（310）上的牺牲层（400）以制造用于形成支撑结构（520）的凹陷部分（410），凹陷部分（410）的底部暴露于第一膜体 （310）; 在牺牲层（400）上沉积介电层（500）; 图案化介电层500以制造第二膜体510和支撑结构520，支撑结构520连接到第一膜体310和第二膜体510; 并去除牺牲层（400）以获得MEMS双层悬浮微结构。

公开(公告)号：EP2879988B1

公开(公告)日：2018-04-04

申请号：EP13829083.8

申请日：2013-07-31

Applicant: Robert Bosch GmbH ,  Chen, Po-Jui ,  Yama, Gary ,  Liger, Matthieu ,  Graham, Andrew

Inventor： CHEN, Po-Jui ,  YAMA, Gary ,  LIGER, Matthieu ,  GRAHAM, Andrew

IPC: B81B7/02 ,  B81C1/00 ,  G01P15/08 ,  G01P15/18 ,  G01C19/5783

CPC classification number: H01L29/84 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2207/015 ,  B81C1/0023 ,  B81C2201/0197 ,  B81C2203/0136 ,  B81C2203/0771 ,  G01C19/5783 ,  G01P15/0802 ,  G01P15/18 ,  H01L29/66007

Abstract: A device with multiple encapsulated functional layers, includes a substrate, a first functional layer positioned above a top surface of the substrate, the functional layer including a first device portion, a first encapsulating layer encapsulating the first functional layer, a second functional layer positioned above the first encapsulating layer, the second functional layer including a second device portion, and a second encapsulating layer encapsulating the second functional layer.

公开(公告)号：EP3166883A1

公开(公告)日：2017-05-17

申请号：EP15818451.5

申请日：2015-07-06

Applicant: InvenSense, Inc.

Inventor： SMEYS, Peter

IPC: B81B7/00

CPC classification number: B81C1/00238 ,  B81B7/02 ,  B81C1/00246 ,  B81C2201/0197 ,  B81C2203/0792

Abstract: A method of providing a CMOS-MEMS structure is disclosed. The method comprises patterning a first top metal on a MEMS actuator substrate and a second top metal on a CMOS substrate. Each of the MEMS actuator substrate and the CMOS substrate include an oxide layer thereon. The method includes etching each of the oxide layers on the MEMS actuator substrate and the base substrate, utilizing a first bonding step to bond the first patterned top metal of the MEMS actuator substrate to the second patterned top metal of the base substrate. Finally the method includes etching an actuator layer into the MEMS actuator substrate and utilizing a second bonding step to bond the MEMS actuator substrate to a MEMS handle substrate.

Abstract translation: 公开了一种提供CMOS-MEMS结构的方法。 该方法包括图案化MEMS致动器衬底上的第一顶部金属和CMOS衬底上的第二顶部金属。 MEMS致动器基板和CMOS基板中的每一个在其上包括氧化物层。 该方法包括利用第一键合步骤来蚀刻MEMS致动器衬底和基础衬底上的每个氧化物层，以将MEMS致动器衬底的第一图案化顶部金属键合到基础衬底的第二图案化顶部金属。 最后，该方法包括将致动器层蚀刻到MEMS致动器衬底中并利用第二结合步骤将MEMS致动器衬底结合到MEMS处理衬底。

公开(公告)号：EP2259997B2

公开(公告)日：2015-09-30

申请号：EP08848955.4

申请日：2008-11-12

Applicant: Nivarox-FAR S.A.

Inventor： FIACCABRINO, Jean-Charles ,  VERARDO, Marco ,  CONUS, Thierry ,  THIÉBAUD, Jean-Philippe ,  PETERS, Jean-Bernard

IPC: B81C99/00 ,  C25D1/00 ,  G04B13/00

CPC classification number: F16H55/06 ,  B81B2201/035 ,  B81C99/0095 ,  B81C2201/0197 ,  C25D1/08 ,  C25D5/02 ,  C25D5/10 ,  G04B13/02 ,  G04B13/022 ,  G04B19/042 ,  Y10T74/1987

公开(公告)号：EP3411894A1

公开(公告)日：2018-12-12

申请号：EP17713766.8

申请日：2017-02-02

Applicant: Analog Devices Global Unlimited Company

Inventor： TWOHIG, Michael, James ,  FITZGERALD, Padraig

IPC: H01H59/00

CPC classification number: B81B3/0051 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/0181 ,  B81C1/0015 ,  B81C2201/0109 ,  B81C2201/0197 ,  H01H59/0009 ,  H01H2059/0027 ,  H01H2059/0054

Abstract: Microelectromechanical systems (MEMS) switches are described. The MEMS switches can be actively opened and closed. The switch can include a beam coupled to an anchor on a substrate by one or more hinges. The beam, the hinges and the anchor may be made of the same material in some configurations. The switch can include electrodes, disposed on a surface of the substrate, for electrically controlling the orientation of the beam. The hinges may be thinner than the beam, resulting in the hinges being more flexible than the beam. In some configurations, the hinges are located within an opening in the beam. The hinges may extend in the same direction of the axis of rotation of the beam and/or in a direction perpendicular to the axis of rotation of the beam.

公开(公告)号：EP2598560A2

公开(公告)日：2013-06-05

申请号：EP11738974.2

申请日：2011-08-01

Applicant: Sony Corporation ,  Sony DADC Austria AG

Inventor： FUHRMANN, Gerda ,  NELLES, Gabriele ,  ROSELLI, Silvia ,  KNORR, Nikolaus ,  PARIS, Alfred ,  KAUFMANN, Maria ,  BAUER, Georg

IPC: C08J7/04 ,  C08J7/06 ,  C08J7/12 ,  B81C1/00

CPC classification number: B81B1/00 ,  B01L3/502707 ,  B01L2300/16 ,  B01L2300/161 ,  B05D1/62 ,  B81C1/00206 ,  B81C3/00 ,  B81C2201/0197 ,  C08J7/04 ,  C08J7/047 ,  C08J7/06 ,  C08J7/123 ,  C08J2383/04 ,  C08L83/04 ,  C23C16/045 ,  Y02P20/582 ,  Y10T156/10

Abstract: The present invention relates to a polymeric substrate having a glass-like surface, in particular an etched-glass-like surface and to a chip made of at least one such polymeric substrate. The present invention also relates to a method of providing a polymeric substrate with an etched-glass-like surface. Moreover, the present invention relates to a kit for manufacturing a chip using such polymeric substrate. Moreover, the present invention relates to the use of a polymeric substrate having a glass-like surface, in particular an etched-glass-like surface for manufacturing a chip.

Abstract translation: 本发明涉及具有玻璃状表面，特别是蚀刻玻璃状表面的聚合物基材和由至少一种这样的聚合物基材制成的芯片。 本发明还涉及提供具有蚀刻玻璃样表面的聚合物基材的方法。 此外，本发明涉及使用这种聚合物基材制造芯片的套件。 此外，本发明涉及具有玻璃状表面的聚合物基材，特别是用于制造芯片的蚀刻玻璃状表面的用途。

公开(公告)号：EP1984462A1

公开(公告)日：2008-10-29

申请号：EP07704279.4

申请日：2007-01-31

Applicant: Université de Liège

Inventor： JEROME, Robert ,  JEROME, Christine ,  SERWAS, Harry ,  VOCCIA, Samuel

IPC: C09D5/44

CPC classification number: C09D5/4476 ,  B01L3/5027 ,  B81C1/00206 ,  B81C2201/0197 ,  C25D15/00

Abstract: Electrografting method for forming and regulating a strongly adherent nanostructured polymer coating onto an electro-conductive surface profile characterized in that the surface profile is regulated by electrodeposition of nanometre- and/or micrometre-scale nuclei onto the surface profile prior to or simultaneously to the formation of the polymer coating.

公开(公告)号：EP1015669A4

公开(公告)日：2003-07-02

申请号：EP98914464

申请日：1998-04-03

Applicant: UNIV SOUTHERN CALIFORNIA

Inventor： COHEN ADAM L

IPC: B81C1/00 ,  B21C37/00 ,  C23F1/00 ,  C25D20060101 ,  C25D1/00 ,  C25D1/10 ,  C25D5/02 ,  C25D5/10 ,  C25D7/12 ,  C25D17/06 ,  C25D19/00 ,  C25D21/12 ,  H01L21/288 ,  H05K3/24

CPC classification number: C25D5/10 ,  B33Y10/00 ,  B33Y70/00 ,  B81C1/00126 ,  B81C2201/0181 ,  B81C2201/0197 ,  B81C2201/032 ,  C25D1/00 ,  C25D1/003 ,  C25D5/022 ,  C25D5/12 ,  C25D5/22 ,  C25D17/06 ,  H01L21/2885 ,  H05K3/241 ,  Y10T428/12486 ,  Y10T428/239

Abstract: An electroplating method that includes: a) contacting a first substrate with a first article, which includes a substrate and a conformable mask disposed in a pattern on the substrate; b) electroplating a first metal from a source of metal ions onto the first substrate in a first pattern, the first pattern corresponding to the complement of the conformable mask pattern; and c) removing the first article from the first substrate, is disclosed. Electroplating articles and electroplating apparatus are also disclosed.

Abstract translation: 一种电镀方法，其包括：a）使第一基板与第一制品接触，所述第一制品包括以基板形式设置的基板和适形掩模; b）以第一图案将来自金属离子源的第一金属电镀到所述第一基板上，所述第一图案对应于所述适形掩模图案的所述补体; 和c）从第一基底去除第一制品。 还公开了电镀制品和电镀装置。

公开(公告)号：EP1156499A1

公开(公告)日：2001-11-21

申请号：EP01420110.7

申请日：2001-05-15

Applicant: Memscap ,  Planhead-Silmag Phs

Inventor： Charrier, Catherine ,  Bouchon, Eric ,  Campo, Alain ,  Imbert, Guy ,  Valentin, François ,  Basteres, Laurent

IPC: H01G5/16 ,  B81B3/00

CPC classification number: B81C1/00158 ,  B81B3/007 ,  B81B2201/018 ,  B81B2203/0127 ,  B81B2203/0307 ,  B81B2203/033 ,  B81C2201/0109 ,  B81C2201/0197 ,  H01G5/16 ,  H01H1/0036

Abstract: Procédé de fabrication de microcomposants électroniques, du type capacité variable ou microswitch, comprenant une armature fixe (1) et une membrane (20) déformable situées en regard l'une de l'autre, caractérisé en ce qu'il comporte les étapes suivantes, consistant :

◆ à déposer une première couche métallique sur une couche d'oxyde (2), ladite première couche métallique étant destinée à former l'armature fixe ;
◆ à déposer un ruban métallique (10, 11) sur au moins une partie de la périphérie et de part et d'autre de l'armature fixe (1), ledit ruban étant destiné à servir d'espaceur entre l'armature fixe (1) et la membrane déformable (20) ;
◆ à déposer une couche de résine sacrificielle (15) sur au moins la superficie de ladite armature fixe (1) ;
◆ à générer par lithographie une pluralité de caissons, sur la surface de ladite couche de résine sacrificielle ;
◆ à déposer par électrolyse, à l'intérieur des caissons formés sur la résine sacrificielle (15), au moins une zone métallique destinée à former la membrane déformable (20), cette zone métallique s'étendant entre des sections du ruban métallique (10, 11) situées de part et d'autre de ladite armature fixe (1) ;
◆ à éliminer la couche de résine sacrificielle (15).