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    Piezoelectric film element and ink-jet recording head using the same
    2.
    发明公开
    Piezoelectric film element and ink-jet recording head using the same 有权
    此所使用的压电薄膜元件和喷墨打印头

    公开(公告)号：EP0932210A3

    公开(公告)日：2004-11-17

    申请号：EP99101223.8

    申请日：1999-01-22

    申请人： SEIKO EPSON CORPORATION

    发明人： Moriya, Souichi ,  Hong, Qiu ,  Sumi, Kouji

    IPC分类号： H01L41/24 ,  B41J2/01

    CPC分类号： B41J2/1646 ,  B41J2/161 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1642 ,  B41J2/1645 ,  B41J2002/14387 ,  H01L41/0805 ,  H01L41/0973 ,  H01L41/318 ,  Y10T29/49002 ,  Y10T29/49117 ,  Y10T29/49401

    摘要： It is an object of this invention to provide a piezoelectric film element which has structural characteristics capable of preventing the generation of cracks in the steps of manufacturing the piezoelectric film element and of increasing the thickness of a piezoelectric film. The piezoelectric film element of this invention comprises a dislocation layer in the piezoelectric film. This "dislocation layer" is the layer of which atoms in crystals are partly defective, which is caused by lattice defects. In the step of forming the piezoelectric film, when a sol which is a piezoelectric film precursor is turned into a gel by means of thermal treatment and when crystal grains of the sol grow, a lattice arrangement over the surfaces of the crystal grains is disturbed moderately. Accordingly, when the piezoelectric film is formed over the gel, the dislocation layer can be formed in the piezoelectric film. It is particularly desirable that the piezoelectric film have a plurality of dislocation layers in its film thickness direction and that the dislocation layers be formed in a manner such that the distances between the adjacent dislocation layers are the same or gradually become shorter from the lower electrode side to the upper electrode side. As stresses caused at the time of formation of the piezoelectric film strongly affect the surface of the piezoelectric film (on the upper electrode side), the above-described structure can effectively relax the stresses caused at the time of formation of the piezoelectric film. Therefore, it is possible to increase the thickness of the piezoelectric film.

    Piezoelectric thin film component and method of manufacturing thereof
    3.
    发明公开
    Piezoelectric thin film component and method of manufacturing thereof 审中-公开
    PiezoelektrischeDünnschichtanordnungund Herstellungsverfahren

    公开(公告)号：EP0932209A2

    公开(公告)日：1999-07-28

    申请号：EP99101333.5

    申请日：1999-01-25

    申请人： SEIKO EPSON CORPORATION

    发明人： Sumi, Kouji ,  Hong, Qiu

    IPC分类号： H01L41/22

    CPC分类号： H01L41/0805 ,  H01L41/0973 ,  H01L41/318 ,  Y10T29/42 ,  Y10T29/49155 ,  Y10T29/49401

    摘要： [Object]
    Providing a mechanism which can eliminate an influence of residual strain in a piezoelectric thin film, having excellent piezoelectric strain characteristics.
    [Means of Solution]
    No or few foreign substances exist or an abundance of foreign substances is low at grain boundaries, which are boundaries between crystal grains of the piezoelectric thin film, even after performing polarization processing (poling) on the piezoelectric thin film component. The width of the grain boundary is 5 nm or less. The crystal grain boundary is a discontinuous layer which does not continue the orientation of adjacent crystal grains.

    摘要翻译： 提供能够消除压电薄膜中的残余应变的影响的机构，具有优异的压电应变特性。 Ä解决方案即使在压电薄膜部件上进行极化处理（极化）之后，也不存在少量外来物质或大量的杂质低的晶界，即晶界的压电薄膜晶界。 晶界的宽度为5nm以下。 晶界是不连续相邻晶粒取向的不连续层。

    Piezoelectric film element and ink-jet recording head using the same
    4.
    发明公开
    Piezoelectric film element and ink-jet recording head using the same 有权
    Piezoelektrisches Schichtelement und Tintenstrahldruckkopf，der dieses benutzt

    公开(公告)号：EP0932210A2

    公开(公告)日：1999-07-28

    申请号：EP99101223.8

    申请日：1999-01-22

    申请人： SEIKO EPSON CORPORATION

    发明人： Moriya, Souichi ,  Hong, Qiu ,  Sumi, Kouji

    IPC分类号： H01L41/24 ,  B41J2/01

    CPC分类号： B41J2/1646 ,  B41J2/161 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1642 ,  B41J2/1645 ,  B41J2002/14387 ,  H01L41/0805 ,  H01L41/0973 ,  H01L41/318 ,  Y10T29/49002 ,  Y10T29/49117 ,  Y10T29/49401

    摘要： It is an object of this invention to provide a piezoelectric film element which has structural characteristics capable of preventing the generation of cracks in the steps of manufacturing the piezoelectric film element and of increasing the thickness of a piezoelectric film. The piezoelectric film element of this invention comprises a dislocation layer in the piezoelectric film. This "dislocation layer" is the layer of which atoms in crystals are partly defective, which is caused by lattice defects. In the step of forming the piezoelectric film, when a sol which is a piezoelectric film precursor is turned into a gel by means of thermal treatment and when crystal grains of the sol grow, a lattice arrangement over the surfaces of the crystal grains is disturbed moderately. Accordingly, when the piezoelectric film is formed over the gel, the dislocation layer can be formed in the piezoelectric film. It is particularly desirable that the piezoelectric film have a plurality of dislocation layers in its film thickness direction and that the dislocation layers be formed in a manner such that the distances between the adjacent dislocation layers are the same or gradually become shorter from the lower electrode side to the upper electrode side. As stresses caused at the time of formation of the piezoelectric film strongly affect the surface of the piezoelectric film (on the upper electrode side), the above-described structure can effectively relax the stresses caused at the time of formation of the piezoelectric film. Therefore, it is possible to increase the thickness of the piezoelectric film.

    摘要翻译： 本发明的目的是提供一种压电膜元件，该压电膜元件具有能够防止在制造压电膜元件的步骤中产生裂纹并增加压电膜的厚度的结构特征。 本发明的压电薄膜元件包括压电薄膜中的位错层。 这种“位错层”是由晶格缺陷引起的晶体中的原子部分缺陷的层。 在形成压电膜的步骤中，当通过热处理将作为压电膜前体的溶胶变成凝胶时，并且当溶胶的晶粒生长时，晶粒表面上的晶格排列适度受到干扰 。 因此，当在凝胶上形成压电膜时，可以在压电膜中形成位错层。 特别优选的是，压电膜在其膜厚度方向上具有多个位错层，并且位错层形成为使得相邻位错层之间的距离相同或从下电极侧逐渐变短 到上电极侧。 由于在形成压电膜时产生的应力对压电膜的表面（上电极侧）产生强烈的影响，所以上述结构能够有效地缓解压电膜形成时的应力。 因此，可以增加压电膜的厚度。

    Piezoelectric thin film, method for producing the same, and ink jet recording head using the thin film
    8.
    发明公开
    Piezoelectric thin film, method for producing the same, and ink jet recording head using the thin film 失效
    一种压电薄膜，及其制造方法的喷墨打印头与使用该薄膜的

    公开(公告)号：EP0736915A1

    公开(公告)日：1996-10-09

    申请号：EP96105356.8

    申请日：1996-04-03

    申请人： SEIKO EPSON CORPORATION

    发明人： Miyashita, Satoru ,  Shinozuka, Masakazu ,  Sumi, Kouji ,  Murai, Masami ,  Takahashi, Tetsushi

    IPC分类号： H01L41/24

    CPC分类号： H01L41/1876 ,  B41J2/14233 ,  H01L41/318

    摘要： A piezoelectric thin film which has good properties, for example, a high dielectric constant and a high piezoelectric strain constant is disclosed. A method for producing a piezoelectric film, which causes no crack during annealing, is also disclosed. The piezoelectric thin film has a thickness in the range of from 0.5 to 20 µm, comprises crystal grains having an average grain diameter of 0.005 to 0.2 µm, and is free from any multilayer structure in its cross section. The process for producing a piezoelectric thin film comprises that steps of: coating a substrate with a sol composition comprising a sol, of a metal component for constituting a piezoelectric film, and a polymer compound and then drying the coating to form a film; pre-sintering the film to form a porous thin film of gel comprising an amorphous metal oxide; pre-annealing the porous thin film of gel to bring the film to a film formed of a crystalline metal oxide; repeating the above steps at least once to form a laminated film formed of a crystalline metal oxide; and annealing the laminated film to grow crystal grains of perovskite type in the film into a larger size.

    摘要翻译： 一种压电薄膜，该薄膜具有良好的性能，例如，高的介电常数和高的压电应变常数是游离缺失盘。 一种用于生产压电电影，这会导致在退火过程中没有裂纹的方法，gibt游离缺失盘。 压电薄膜具有的厚度在从0.5至20微米的范围内，包括具有在0.005平均粒径的晶粒至0.2微米，并且是从在其横截面的任何多层结构自由。 用于制造压电薄膜包括所做的以下步骤的方法：涂覆的基材用溶胶组合物用于构成的压电膜，电影，和高分子化合物，然后干燥该涂层以形成一种薄膜，包括溶胶，金属组分; 预烧结的膜以形成凝胶，其包含无定形金属氧化物组成的多孔薄膜; 预退火凝胶的多孔薄膜以使该膜的膜形成的结晶性金属氧化物的; 重复上述步骤至少一次以形成层叠膜形成的结晶性金属氧化物的; 和退火该层压薄膜生长钙钛矿型的结晶粒子在薄膜成较大的尺寸。

    Piezoelectric thin film component and method of manufacturing thereof
    9.
    发明公开
    Piezoelectric thin film component and method of manufacturing thereof 审中-公开
    的压电薄膜元件和制造工艺

    公开(公告)号：EP0932209A3

    公开(公告)日：2004-12-01

    申请号：EP99101333.5

    申请日：1999-01-25

    申请人： SEIKO EPSON CORPORATION

    发明人： Sumi, Kouji ,  Hong, Qiu

    IPC分类号： H01L41/22 ,  B41J2/14

    CPC分类号： H01L41/0805 ,  H01L41/0973 ,  H01L41/318 ,  Y10T29/42 ,  Y10T29/49155 ,  Y10T29/49401

    摘要： Providing a mechanism which can eliminate an influence of residual strain in a piezoelectric thin film, having excellent piezoelectric strain characteristics. A thin film piezoelectric component is provided having low residual strain at its grain boundary (14A) between the piezoelectric PZT film (15) and its platinum electrode (14), even after performing polarization processing (poling) on the piezoelectric thin film component. The width of the grain boundary is 5 nm or less. The crystal grain boundary is a discontinuous layer which does not continue the orientation of adjacent crystal grains.

    Method of forming oxide-ceramics film
    10.
    发明公开
    Method of forming oxide-ceramics film 审中-公开
    Verfahren zur Bildung eines Oxidkeramikfilmes

    公开(公告)号：EP1371606A1

    公开(公告)日：2003-12-17

    申请号：EP03019081.3

    申请日：1999-01-19

    申请人： SEIKO EPSON CORPORATION

    发明人： Qiu, Hong ,  Sumi, Kouji ,  Shimada, Masato ,  Nishiwaki, Tsutomu ,  Hasegawa, Kazumasa

    IPC分类号： C01B13/14

    CPC分类号： H01L27/10 ,  C23C18/1208 ,  C23C18/1254 ,  C23C18/1295 ,  H01L21/316 ,  H01L21/31691

    摘要： A method of forming an oxide-ceramics film capable of controlling the amount of oxygen in the film and with little oxygen deficiency. At least one or more of the steps among a step of forming an amorphous film, a step of heating the amorphous film for crystallization, and a step of these heat processings to be conducted thereafter include a step of processing under an atmosphere including moisture.

    摘要翻译： 一种形成能够控制膜中氧的量并且几乎没有氧气的氧化物陶瓷膜的方法。 形成非晶膜的步骤中的至少一个或多个步骤，加热用于结晶的非晶膜的步骤以及之后进行的这些加热处理的步骤包括在包括水分的气氛下进行处理的步骤。