公开(公告)号：EP4345925A1

公开(公告)日：2024-04-03

申请号：EP23167343.5

申请日：2023-04-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： CHOI, Junhee ,  KONG, Kiho ,  KIM, Joosung ,  LEE, Eunsung ,  HAN, Joohun

IPC: H01L33/16 ,  H01L33/50

Abstract: A light emitting device includes a light emitting rod in which a porous first type semiconductor layer, an active layer, and a second type semiconductor layer are sequentially arranged, and a wavelength conversion cluster is embedded in the porous first type semiconductor layer and configured to convert a first light generated in the active layer into a second light having a different wavelength.

公开(公告)号：EP3799139A1

公开(公告)日：2021-03-31

申请号：EP20152918.7

申请日：2020-01-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： HWANG, Kyungwook ,  KANG, Sungjin ,  HWANG, Junsik ,  CHOI, Junhee

IPC: H01L33/60

Abstract: Provided is a display device including a substrate, a transfer guiding mold provided on the substrate and including a plurality of openings, and a plurality of micro light emitting diodes (LEDs) provided on the substrate in the plurality of openings, wherein a height of the transfer guiding mold is less than twice a height of each of the plurality of micro LEDs.

公开(公告)号：EP3413350A1

公开(公告)日：2018-12-12

申请号：EP18176092.7

申请日：2018-06-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： CHUNG, Chilhee ,  CHOI, Junhee ,  HWANG, Sungwoo ,  JUN, Shinae ,  CHUNG, Deukseok ,  CHO, Junseok

IPC: H01L25/16 ,  H01L27/15 ,  H04N9/31 ,  H05B33/28 ,  H01L33/18 ,  H01L33/24

CPC classification number: H01L33/06 ,  H01L27/1255 ,  H01L27/1262 ,  H01L27/15 ,  H01L27/156 ,  H01L33/18 ,  H01L33/24 ,  H01L33/32 ,  H01L33/44 ,  H01L33/504 ,  H04N9/315 ,  H05B33/28

Abstract: Provided is a display apparatus. The display apparatus may include a monolithic device in which a light emitting element array, a transistor array, and a color control member are monolithically provided on one substrate. The display apparatus may include a first layered structure including the light emitting element array, a second layered structure including the transistor array, and a third layered structure including the color control member, wherein the second layered structure may be between the first layered structure and the third layered structure. The light emitting element array may include a plurality of light emitting elements comprising an inorganic material. The plurality of light emitting elements may have a vertical nanostructure.

公开(公告)号：EP4481818A1

公开(公告)日：2024-12-25

申请号：EP24175039.7

申请日：2024-05-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： LEE, Eunsung ,  KONG, Kiho ,  CHOI, Junhee ,  KIM, Nakhyun

IPC: H01L25/16 ,  H01L27/15 ,  H01L33/50 ,  H01L33/00

Abstract: Provided are a display apparatus and a method of manufacturing the display apparatus. The display apparatus includes a pixel electrode configured to supply power to a subpixel; a common electrode; an organic transparent substrate; a driving layer provided on the organic transparent substrate and electrically connected to the pixel electrode, the driving layer including a driving device configured to control power on-off of the subpixel; and a light emitting unit provided on the driving layer and including an inorganic material, the light emitting unit including a first semiconductor layer, an active layer, and a second semiconductor layer.

公开(公告)号：EP4216288A1

公开(公告)日：2023-07-26

申请号：EP22206590.6

申请日：2022-11-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： PARK, Younghwan ,  KIM, Joosung ,  SHIN, Dongchul ,  CHOI, Junhee

IPC: H01L33/00 ,  H01L33/08 ,  H01L33/18 ,  H01L33/20 ,  H01L33/24 ,  H01L33/32

Abstract: Provided are nanorod light emitting diodes (LEDs), display apparatuses, and manufacturing methods thereof. The nanorod LED includes a first-type semiconductor layer including a body and a pyramidal structure continuously provided from the body, a nitride light emitting layer provided on the pyramidal structure, and a second-type semiconductor layer provided in the nitride light emitting layer.

公开(公告)号：EP3979320A1

公开(公告)日：2022-04-06

申请号：EP21180129.5

申请日：2021-06-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： KONG, Kiho ,  CHOI, Junhee

IPC: H01L25/075 ,  H01L27/15 ,  H01L33/62 ,  H01L25/16

Abstract: A micro light emitting display apparatus and a method of manufacturing the micro light emitting display apparatus are disclosed. The micro light emitting display apparatus includes a micro light emitting element, a driving transistor connected to the micro light emitting element, a switching transistor connected to the driving transistor, and a first opening is provided to expose a source region or a drain region of the switching transistor, and a gate electrode of the driving transistor extends into the first opening and in contact with the source region or the drain region of the switching transistor.

公开(公告)号：EP3783651A1

公开(公告)日：2021-02-24

申请号：EP20188152.1

申请日：2020-07-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： KONG, Kiho ,  CHOI, Junhee

IPC: H01L27/12

Abstract: A display apparatus includes a substrate, a light-emitting device provided on the substrate, a driving transistor device configured to control the light-emitting device, a first power supply line electrically connected to a source region of the driving transistor device, a conductive pattern electrically connected to a gate electrode of the driving transistor device, and a second power supply line electrically connected to the first power supply line, wherein the conductive pattern and the first power supply line constitute a first capacitor, and the conductive pattern and the second power supply line constitute a second capacitor, wherein the first capacitor and the second capacitor are connected in parallel.

公开(公告)号：EP3660900A1

公开(公告)日：2020-06-03

申请号：EP19201136.9

申请日：2019-10-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： CHOI, Junhee ,  KANG, Sungjin ,  KONG, Kiho ,  PARK, Junghun ,  PARK, Jinjoo ,  HAN, Joohun ,  HWANG, Kyungwook

IPC: H01L25/16 ,  H01L27/15 ,  H01L25/075 ,  H01L33/14

Abstract: Provided are a display apparatus (100) and a method of manufacturing the same. The display apparatus (100) includes a support substrate (110), a driving layer (130) provided on the support substrate (110) and including a driving element (135) configured to apply power to a pixel electrode (141), and a light-emitting layer (140) provided on the driving layer (130).

公开(公告)号：EP4507002A1

公开(公告)日：2025-02-12

申请号：EP24178718.3

申请日：2024-05-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： CHOI, Junhee ,  KIM, Joosung ,  SHIN, Dongchul ,  PARK, Junghun

IPC: H01L27/15 ,  H01L33/00 ,  H01L33/04 ,  H01L33/24 ,  H01L33/06 ,  H01L33/18 ,  H01L33/20

Abstract: Provided is a nanorod light-emitting device including a support layer, a first-type semiconductor nanocore protruding from an upper surface of the support layer and including a semiconductor material doped as a first conductivity type, a mask layer on an upper surface of the support layer and extending to a first height of the first-type semiconductor nanocore in a vertical direction and adjacent to a surface of the first-type semiconductor nanocore, a light-emitting layer having a multi-quantum well structure adjacent to a portion of the first-type semiconductor nanocore above the first height in the vertical direction, and a second-type semiconductor layer adjacent to a surface of the light-emitting layer and including a semiconductor material doped as a second conductivity type.

公开(公告)号：EP4398318A1

公开(公告)日：2024-07-10

申请号：EP23215804.8

申请日：2023-12-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： SHIN, Dongchul ,  KIM, Joosung ,  PARK, Younghwan ,  CHOI, Junhee

IPC: H01L33/12 ,  H01L33/24 ,  H01L33/32 ,  H01L25/075 ,  H01L33/06

CPC classification number: H01L33/12 ,  H01L33/32 ,  H01L25/0753 ,  H01L33/04

Abstract: A nitride-based semiconductor light-emitting device, including a first semiconductor layer, wherein the first semiconductor layer is nitride-based and has a first conductivity type; a light-emitting layer provided on the first semiconductor layer, wherein the light-emitting layer may include a nitride-based semiconductor including Indium (In); a second semiconductor layer provided on the light-emitting layer, wherein the second semiconductor layer is nitride-based and has a second conductivity type; and a strain relaxation layer provided between the first semiconductor layer and the light-emitting layer, and including an AlGaN layer having a protrusion whose horizontal cross-section area decreases as the protrusion extends in a vertical direction from the second semiconductor layer to the first semiconductor layer.