公开(公告)号：EP3660900A1

公开(公告)日：2020-06-03

申请号：EP19201136.9

申请日：2019-10-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： CHOI, Junhee ,  KANG, Sungjin ,  KONG, Kiho ,  PARK, Junghun ,  PARK, Jinjoo ,  HAN, Joohun ,  HWANG, Kyungwook

IPC: H01L25/16 ,  H01L27/15 ,  H01L25/075 ,  H01L33/14

Abstract: Provided are a display apparatus (100) and a method of manufacturing the same. The display apparatus (100) includes a support substrate (110), a driving layer (130) provided on the support substrate (110) and including a driving element (135) configured to apply power to a pixel electrode (141), and a light-emitting layer (140) provided on the driving layer (130).

公开(公告)号：EP3926697A1

公开(公告)日：2021-12-22

申请号：EP20214186.7

申请日：2020-12-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： CHOI, Junhee ,  KIM, Nakhyun ,  PARK, Jinjoo ,  HAN, Joohun

IPC: H01L33/14

Abstract: Provided is a nanorod light-emitting device including a first semiconductor layer doped with a first conductive type impurity, an emission layer disposed above the first semiconductor layer, a second semiconductor layer disposed above the emission layer and doped with a second conductive type impurity that is electrically opposite to the first conductive type impurity, a conductive layer disposed between at least one of a center portion of a lower surface of the emission layer and the first semiconductor layer and a center portion of an upper surface of the emission layer and the second semiconductor layer, and a current blocking layer surrounding a sidewall of the conductive layer.

公开(公告)号：EP3836212A1

公开(公告)日：2021-06-16

申请号：EP20210067.3

申请日：2020-11-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： CHOI, Junhee ,  KONG, Kiho ,  KIM, Nakhyun ,  PARK, Junghun ,  PARK, Jinjoo ,  HAN, Joohun

IPC: H01L25/075 ,  H01L33/46 ,  H01L33/00

Abstract: Provided is a display apparatus including a plurality of subpixels and configured to emit light based on each of the plurality of subpixels, the display apparatus including a substrate, a driving layer provided on the substrate and including a driving element which is configured to apply current to the display apparatus, a first electrode electrically connected to the driving layer, a first semiconductor layer provided on the first electrode, an active layer provided on the first semiconductor layer, a second semiconductor layer provided on the active layer, a second electrode provided on the second semiconductor layer, and a reflective layer provided on the second semiconductor layer, wherein light emitted from the active layer resonates between the first electrode and the reflective layer.

公开(公告)号：EP4318614A1

公开(公告)日：2024-02-07

申请号：EP22213872.9

申请日：2022-12-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： PARK, Jinjoo ,  KIM, Joosung ,  PARK, Younghwan ,  SHIN, Dongchul

IPC: H01L33/12 ,  H01L33/18 ,  H01L33/24 ,  H01L27/15 ,  H01L33/08 ,  H01L33/32

Abstract: A light-emitting device includes a base semiconductor layer, a three-dimensional (3D) light-emitting structure, and a flat light-emitting structure formed in a flat shape, wherein the flat light-emitting structure generates light having a different wavelength than that of the 3D light-emitting structure. A strain-relieving layer relieving lattice mismatch between the base semiconductor layer and the flat light-emitting structure may be arranged on the base semiconductor layer in an area in which at least the flat light-emitting structure is formed.

公开(公告)号：EP4312273A1

公开(公告)日：2024-01-31

申请号：EP23167342.7

申请日：2023-04-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： CHOI, Junhee ,  KONG, Kiho ,  KIM, Joosung ,  PARK, Younghwan ,  PARK, Jinjoo ,  SHIN, Dongchul

IPC: H01L27/15 ,  H01L25/16 ,  H01L33/00 ,  H01L33/14 ,  H01L33/62 ,  H01L33/08

Abstract: A light emitting structure includes: a substrate; a first epitaxial structure disposed on the substrate; a second epitaxial structure disposed on the first epitaxial structure; and a third epitaxial structure disposed on the second epitaxial structure. Each of the first epitaxial structure, the second epitaxial structure, and the third epitaxial structure comprises, in a sequentially stacked structure, a first semiconductor layer of a first conductivity, a carrier blocking layer, an active layer, and a second semiconductor layer of a second conductivity.

公开(公告)号：EP3979325A1

公开(公告)日：2022-04-06

申请号：EP21180803.5

申请日：2021-06-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： CHOI, Junhee ,  KONG, Kiho ,  KIM, Nakhyun ,  KIM, Dongho ,  PARK, Junghun ,  PARK, Jinjoo ,  LEE, Eunsung ,  HAN, Joohun

IPC: H01L27/15 ,  H01L33/24

Abstract: A micro light-emitting display apparatus and a method of manufacturing the same are disclosed The micro light-emitting display apparatus includes a first semiconductor layer, an isolation structure provided on the first semiconductor layer and configured to define a plurality of sub-pixels each configured to emit light, a first light-emitting unit including a first active layer provided in a first sub-pixel among the plurality of sub-pixels, and a second semiconductor layer provided on the first active layer, and a second light-emitting unit including a rod semiconductor layer provided in a second sub-pixel among the plurality of sub-pixels, a second active layer provided on the rod semiconductor layer, and a third semiconductor layer provided on the second active layer. The first active layer is configured to emit blue light and the second active layer is configured to emit green light.

公开(公告)号：EP3971981A1

公开(公告)日：2022-03-23

申请号：EP21194343.6

申请日：2021-09-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： CHOI, Junhee ,  PARK, Jinjoo ,  KONG, Kiho ,  PARK, Junghun ,  LEE, Eunsung

IPC: H01L27/15

Abstract: A display device includes an ion implantation region, a first semiconductor layer, an active layer under the first semiconductor layer, and a second semiconductor layer under the active layer. The ion implantation region includes a plurality of ions and partitions the active layer into a plurality of light-emitting regions, and an average ion concentration ratio of each of the light-emitting regions is 2 to 15.

公开(公告)号：EP3855513A3

公开(公告)日：2021-11-03

申请号：EP20217782.0

申请日：2020-12-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： CHOI, Junhee ,  KIM, Nakhyun ,  PARK, Jinjoo ,  HAN, Joohun

IPC: H01L33/08 ,  H01L25/075 ,  H01L33/18

Abstract: A semiconductor light emitting diode (LED) and a method of manufacturing the same are provided. The LED includes a first semiconductor layer; a plurality of active elements spaced apart on the first semiconductor layer and each having a width less than a width of the first semiconductor layer; and a second semiconductor layer disposed on the plurality of active elements.

公开(公告)号：EP4333085A1

公开(公告)日：2024-03-06

申请号：EP23184735.1

申请日：2023-07-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： PARK, Jinjoo ,  KIM, Joosung ,  PARK, Younghwan ,  SHIN, Dongchul

IPC: H01L33/08 ,  H01L33/12

Abstract: A multi-wavelength light-emitting device configured to emit light of a first wavelength, light of a second wavelength, and a third wavelength, includes a substrate, a first type semiconductor layer provided on the substrate, an active layer provided on the first type semiconductor layer, a second type semiconductor layer provided on the active layer, and an electrode provided on the second type semiconductor layer. The active layer includes a first active area configured to emit the light of the first wavelength, a second active area configured to emit the light of the second wavelength, and a third active area configured to emit the light of the third wavelength.

公开(公告)号：EP4318613A1

公开(公告)日：2024-02-07

申请号：EP23163385.0

申请日：2023-03-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： KIM, Joosung ,  PARK, Younghwan ,  PARK, Jinjoo ,  SHIN, Dongchul

IPC: H01L33/00 ,  H01L33/12 ,  H01L33/32

Abstract: A light emitting device includes a light emitting device includes: a first nitride semiconductor layer doped with an n-type dopant and having a first lattice constant; an active layer provided on the first nitride semiconductor layer and having a second lattice constant greater than the first lattice constant, the active layer including a nitride semiconductor material including indium; a stress relaxation layer interposed between the first nitride semiconductor layer and the active layer and having a third lattice constant between the first lattice constant and the second lattice constant, the stress relaxation layer including a nitride semiconductor material including indium; and a second nitride semiconductor layer provide on the active layer and doped with a p-type dopant, wherein the active layer includes: an upper active region provided on an upper surface of the stress relaxation layer, and a side active region provided on a side surface of the stress relaxation layer.