公开(公告)号：EP4145057A1

公开(公告)日：2023-03-08

申请号：EP21892139.3

申请日：2021-10-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： SEO, Yongho ,  KIM, Gahyun ,  KIM, Nakhyun ,  KIM, Juyoung

IPC: F24F13/20 ,  F24F13/08 ,  F24F8/10 ,  F24F1/0011 ,  H02K5/04 ,  H02K7/14 ,  H02K7/00

Abstract: An air conditioner includes a main body, a fan configured to form an airflow inside the main body, a motor including a shaft to which the fan is coupled, and a motor cover to which the motor is fixed. The motor cover includes a body including a rear surface formed in a truncated cone shape, and a vortex breaker which protrudes toward the fan from the rear surface body along an outer periphery of the body, so as to prevent air, which is discharged from the fan, from forming a vortex.

公开(公告)号：EP4481818A1

公开(公告)日：2024-12-25

申请号：EP24175039.7

申请日：2024-05-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： LEE, Eunsung ,  KONG, Kiho ,  CHOI, Junhee ,  KIM, Nakhyun

IPC: H01L25/16 ,  H01L27/15 ,  H01L33/50 ,  H01L33/00

Abstract: Provided are a display apparatus and a method of manufacturing the display apparatus. The display apparatus includes a pixel electrode configured to supply power to a subpixel; a common electrode; an organic transparent substrate; a driving layer provided on the organic transparent substrate and electrically connected to the pixel electrode, the driving layer including a driving device configured to control power on-off of the subpixel; and a light emitting unit provided on the driving layer and including an inorganic material, the light emitting unit including a first semiconductor layer, an active layer, and a second semiconductor layer.

公开(公告)号：EP4109568A1

公开(公告)日：2022-12-28

申请号：EP22178144.6

申请日：2022-06-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： KIM, Joosung ,  PARK, Younghwan ,  SHIN, Dongchul ,  CHOI, Junhee ,  KIM, Nakhyun ,  PARK, Junghun ,  LEE, Eunsung ,  HAN, Joohun

IPC: H01L33/02 ,  H01L33/12

Abstract: A light emitting device may be a bar-type light emitting device and include a n-GaN semiconductor layer, a p-GaN semiconductor layer spaced apart from the n-GaN semiconductor layer, an active layer arranged between the n-GaN semiconductor layer and the p-GaN semiconductor layer, and a strain relaxing layer including indium clusters and voids.

公开(公告)号：EP3979325A1

公开(公告)日：2022-04-06

申请号：EP21180803.5

申请日：2021-06-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： CHOI, Junhee ,  KONG, Kiho ,  KIM, Nakhyun ,  KIM, Dongho ,  PARK, Junghun ,  PARK, Jinjoo ,  LEE, Eunsung ,  HAN, Joohun

IPC: H01L27/15 ,  H01L33/24

Abstract: A micro light-emitting display apparatus and a method of manufacturing the same are disclosed The micro light-emitting display apparatus includes a first semiconductor layer, an isolation structure provided on the first semiconductor layer and configured to define a plurality of sub-pixels each configured to emit light, a first light-emitting unit including a first active layer provided in a first sub-pixel among the plurality of sub-pixels, and a second semiconductor layer provided on the first active layer, and a second light-emitting unit including a rod semiconductor layer provided in a second sub-pixel among the plurality of sub-pixels, a second active layer provided on the rod semiconductor layer, and a third semiconductor layer provided on the second active layer. The first active layer is configured to emit blue light and the second active layer is configured to emit green light.

公开(公告)号：EP3855513A3

公开(公告)日：2021-11-03

申请号：EP20217782.0

申请日：2020-12-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： CHOI, Junhee ,  KIM, Nakhyun ,  PARK, Jinjoo ,  HAN, Joohun

IPC: H01L33/08 ,  H01L25/075 ,  H01L33/18

Abstract: A semiconductor light emitting diode (LED) and a method of manufacturing the same are provided. The LED includes a first semiconductor layer; a plurality of active elements spaced apart on the first semiconductor layer and each having a width less than a width of the first semiconductor layer; and a second semiconductor layer disposed on the plurality of active elements.

公开(公告)号：EP4187609A1

公开(公告)日：2023-05-31

申请号：EP22180461.0

申请日：2022-06-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： CHOI, Junhee ,  KONG, Kiho ,  PARK, Junghun ,  LEE, Eunsung ,  KIM, Nakhyun ,  KIM, Joosung ,  PARK, Younghwan ,  SHIN, Dongchul ,  HAN, Joohun

IPC: H01L27/15 ,  H01L33/00 ,  H01L33/14 ,  H01L33/20 ,  H01L33/40 ,  H01L33/50 ,  H01L25/16 ,  H01L33/22 ,  H01L33/30 ,  H01L33/44 ,  H01L33/60

Abstract: Provided is a display apparatus (100) including: a first semiconductor layer (211) having a first surface and a second surface opposite to each other, a plurality of partitions (230) protruding from the first surface, and a plurality of opening areas (235) between the plurality of partitions; a plurality of active layers (212) provided opposite to the plurality of opening areas on the second surface of the first semiconductor layer; a plurality of second semiconductor layers (213) respectively provided on the plurality of active layers opposite to the first semiconductor layer; a separation film (214) provided between two adjacent active layers among the plurality of active layers and between two adjacent second semiconductor layers among the plurality of second semiconductor layers; a plurality of color conversion layers (252, 254, 256) provided in the plurality of opening areas on the first surface of the first semiconductor layer; a light blocking film (231) provided on sidewalls of the plurality of partitions; and a driving circuit (DCL) configured to independently drive the plurality of active layers.

公开(公告)号：EP3993068A1

公开(公告)日：2022-05-04

申请号：EP21163683.2

申请日：2021-03-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： HAN, Joohun ,  CHOI, Junhee ,  KIM, Nakhyun ,  KIM, Dongho ,  PARK, Jinjoo

IPC: H01L33/14 ,  H01L33/08 ,  H01L33/00 ,  H01L33/22 ,  H01L21/308

Abstract: A nanorod light emitting device, a method of manufacturing the same, and a display apparatus including the nanorod light emitting device are provided. The nanorod light emitting device includes a first semiconductor layer doped with a first conductivity type, a light emitting layer disposed on the first semiconductor layer, and a second semiconductor layer disposed on the light emitting layer and doped with a second conductivity type that is electrically opposite to the first conductivity type, wherein a distance between a lower surface of the first semiconductor layer and an upper surface of the second semiconductor layer is in a range of about 2 µm to about 10 µm, wherein a difference between a diameter of the upper surface of the second semiconductor layer and the lower surface of the first semiconductor layer is 10% or less of a diameter of the upper surface of the second semiconductor layer.

公开(公告)号：EP3855513A2

公开(公告)日：2021-07-28

申请号：EP20217782.0

申请日：2020-12-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： CHOI, Junhee ,  KIM, Nakhyun ,  PARK, Jinjoo ,  HAN, Joohun

IPC: H01L33/08 ,  H01L25/075 ,  H01L33/18

Abstract: A semiconductor light emitting diode (LED) and a method of manufacturing the same are provided. The LED includes a first semiconductor layer; a plurality of active elements spaced apart on the first semiconductor layer and each having a width less than a width of the first semiconductor layer; and a second semiconductor layer disposed on the plurality of active elements.

公开(公告)号：EP4109567A1

公开(公告)日：2022-12-28

申请号：EP22153654.3

申请日：2022-01-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： CHOI, Junhee ,  KIM, Nakhyun ,  KIM, Joosung ,  LEE, Eunsung ,  HAN, Joohun ,  KONG, Kiho ,  PARK, Junghun

IPC: H01L33/00 ,  H01L33/08 ,  H01L33/16 ,  H01L33/24 ,  H01L33/44 ,  H01L33/06

Abstract: Provided is a substrate structure including a substrate, a buffer layer disposed on the substrate, a porous semiconductor layer disposed on the buffer layer, the porous semiconductor layer having a plurality of voids, a plurality of semiconductor light emitting structures disposed on the porous semiconductor layer, the plurality of semiconductor light emitting structures having a nanorod shape extending vertically, and a passivation film disposed on a side wall of each of the plurality of semiconductor light emitting structures, the passivation film having an insulation property.

公开(公告)号：EP3926697A1

公开(公告)日：2021-12-22

申请号：EP20214186.7

申请日：2020-12-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： CHOI, Junhee ,  KIM, Nakhyun ,  PARK, Jinjoo ,  HAN, Joohun

IPC: H01L33/14

Abstract: Provided is a nanorod light-emitting device including a first semiconductor layer doped with a first conductive type impurity, an emission layer disposed above the first semiconductor layer, a second semiconductor layer disposed above the emission layer and doped with a second conductive type impurity that is electrically opposite to the first conductive type impurity, a conductive layer disposed between at least one of a center portion of a lower surface of the emission layer and the first semiconductor layer and a center portion of an upper surface of the emission layer and the second semiconductor layer, and a current blocking layer surrounding a sidewall of the conductive layer.