公开(公告)号：EP4345925A1

公开(公告)日：2024-04-03

申请号：EP23167343.5

申请日：2023-04-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： CHOI, Junhee ,  KONG, Kiho ,  KIM, Joosung ,  LEE, Eunsung ,  HAN, Joohun

IPC: H01L33/16 ,  H01L33/50

Abstract: A light emitting device includes a light emitting rod in which a porous first type semiconductor layer, an active layer, and a second type semiconductor layer are sequentially arranged, and a wavelength conversion cluster is embedded in the porous first type semiconductor layer and configured to convert a first light generated in the active layer into a second light having a different wavelength.

公开(公告)号：EP4187609A1

公开(公告)日：2023-05-31

申请号：EP22180461.0

申请日：2022-06-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： CHOI, Junhee ,  KONG, Kiho ,  PARK, Junghun ,  LEE, Eunsung ,  KIM, Nakhyun ,  KIM, Joosung ,  PARK, Younghwan ,  SHIN, Dongchul ,  HAN, Joohun

IPC: H01L27/15 ,  H01L33/00 ,  H01L33/14 ,  H01L33/20 ,  H01L33/40 ,  H01L33/50 ,  H01L25/16 ,  H01L33/22 ,  H01L33/30 ,  H01L33/44 ,  H01L33/60

Abstract: Provided is a display apparatus (100) including: a first semiconductor layer (211) having a first surface and a second surface opposite to each other, a plurality of partitions (230) protruding from the first surface, and a plurality of opening areas (235) between the plurality of partitions; a plurality of active layers (212) provided opposite to the plurality of opening areas on the second surface of the first semiconductor layer; a plurality of second semiconductor layers (213) respectively provided on the plurality of active layers opposite to the first semiconductor layer; a separation film (214) provided between two adjacent active layers among the plurality of active layers and between two adjacent second semiconductor layers among the plurality of second semiconductor layers; a plurality of color conversion layers (252, 254, 256) provided in the plurality of opening areas on the first surface of the first semiconductor layer; a light blocking film (231) provided on sidewalls of the plurality of partitions; and a driving circuit (DCL) configured to independently drive the plurality of active layers.

公开(公告)号：EP4481818A1

公开(公告)日：2024-12-25

申请号：EP24175039.7

申请日：2024-05-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： LEE, Eunsung ,  KONG, Kiho ,  CHOI, Junhee ,  KIM, Nakhyun

IPC: H01L25/16 ,  H01L27/15 ,  H01L33/50 ,  H01L33/00

Abstract: Provided are a display apparatus and a method of manufacturing the display apparatus. The display apparatus includes a pixel electrode configured to supply power to a subpixel; a common electrode; an organic transparent substrate; a driving layer provided on the organic transparent substrate and electrically connected to the pixel electrode, the driving layer including a driving device configured to control power on-off of the subpixel; and a light emitting unit provided on the driving layer and including an inorganic material, the light emitting unit including a first semiconductor layer, an active layer, and a second semiconductor layer.

公开(公告)号：EP3979320A1

公开(公告)日：2022-04-06

申请号：EP21180129.5

申请日：2021-06-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： KONG, Kiho ,  CHOI, Junhee

IPC: H01L25/075 ,  H01L27/15 ,  H01L33/62 ,  H01L25/16

Abstract: A micro light emitting display apparatus and a method of manufacturing the micro light emitting display apparatus are disclosed. The micro light emitting display apparatus includes a micro light emitting element, a driving transistor connected to the micro light emitting element, a switching transistor connected to the driving transistor, and a first opening is provided to expose a source region or a drain region of the switching transistor, and a gate electrode of the driving transistor extends into the first opening and in contact with the source region or the drain region of the switching transistor.

公开(公告)号：EP3783651A1

公开(公告)日：2021-02-24

申请号：EP20188152.1

申请日：2020-07-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： KONG, Kiho ,  CHOI, Junhee

IPC: H01L27/12

Abstract: A display apparatus includes a substrate, a light-emitting device provided on the substrate, a driving transistor device configured to control the light-emitting device, a first power supply line electrically connected to a source region of the driving transistor device, a conductive pattern electrically connected to a gate electrode of the driving transistor device, and a second power supply line electrically connected to the first power supply line, wherein the conductive pattern and the first power supply line constitute a first capacitor, and the conductive pattern and the second power supply line constitute a second capacitor, wherein the first capacitor and the second capacitor are connected in parallel.

公开(公告)号：EP3660900A1

公开(公告)日：2020-06-03

申请号：EP19201136.9

申请日：2019-10-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： CHOI, Junhee ,  KANG, Sungjin ,  KONG, Kiho ,  PARK, Junghun ,  PARK, Jinjoo ,  HAN, Joohun ,  HWANG, Kyungwook

IPC: H01L25/16 ,  H01L27/15 ,  H01L25/075 ,  H01L33/14

Abstract: Provided are a display apparatus (100) and a method of manufacturing the same. The display apparatus (100) includes a support substrate (110), a driving layer (130) provided on the support substrate (110) and including a driving element (135) configured to apply power to a pixel electrode (141), and a light-emitting layer (140) provided on the driving layer (130).

公开(公告)号：EP4312273A1

公开(公告)日：2024-01-31

申请号：EP23167342.7

申请日：2023-04-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： CHOI, Junhee ,  KONG, Kiho ,  KIM, Joosung ,  PARK, Younghwan ,  PARK, Jinjoo ,  SHIN, Dongchul

IPC: H01L27/15 ,  H01L25/16 ,  H01L33/00 ,  H01L33/14 ,  H01L33/62 ,  H01L33/08

Abstract: A light emitting structure includes: a substrate; a first epitaxial structure disposed on the substrate; a second epitaxial structure disposed on the first epitaxial structure; and a third epitaxial structure disposed on the second epitaxial structure. Each of the first epitaxial structure, the second epitaxial structure, and the third epitaxial structure comprises, in a sequentially stacked structure, a first semiconductor layer of a first conductivity, a carrier blocking layer, an active layer, and a second semiconductor layer of a second conductivity.

公开(公告)号：EP3979325A1

公开(公告)日：2022-04-06

申请号：EP21180803.5

申请日：2021-06-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： CHOI, Junhee ,  KONG, Kiho ,  KIM, Nakhyun ,  KIM, Dongho ,  PARK, Junghun ,  PARK, Jinjoo ,  LEE, Eunsung ,  HAN, Joohun

IPC: H01L27/15 ,  H01L33/24

Abstract: A micro light-emitting display apparatus and a method of manufacturing the same are disclosed The micro light-emitting display apparatus includes a first semiconductor layer, an isolation structure provided on the first semiconductor layer and configured to define a plurality of sub-pixels each configured to emit light, a first light-emitting unit including a first active layer provided in a first sub-pixel among the plurality of sub-pixels, and a second semiconductor layer provided on the first active layer, and a second light-emitting unit including a rod semiconductor layer provided in a second sub-pixel among the plurality of sub-pixels, a second active layer provided on the rod semiconductor layer, and a third semiconductor layer provided on the second active layer. The first active layer is configured to emit blue light and the second active layer is configured to emit green light.

公开(公告)号：EP3971981A1

公开(公告)日：2022-03-23

申请号：EP21194343.6

申请日：2021-09-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： CHOI, Junhee ,  PARK, Jinjoo ,  KONG, Kiho ,  PARK, Junghun ,  LEE, Eunsung

IPC: H01L27/15

Abstract: A display device includes an ion implantation region, a first semiconductor layer, an active layer under the first semiconductor layer, and a second semiconductor layer under the active layer. The ion implantation region includes a plurality of ions and partitions the active layer into a plurality of light-emitting regions, and an average ion concentration ratio of each of the light-emitting regions is 2 to 15.

公开(公告)号：EP4109567A1

公开(公告)日：2022-12-28

申请号：EP22153654.3

申请日：2022-01-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： CHOI, Junhee ,  KIM, Nakhyun ,  KIM, Joosung ,  LEE, Eunsung ,  HAN, Joohun ,  KONG, Kiho ,  PARK, Junghun

IPC: H01L33/00 ,  H01L33/08 ,  H01L33/16 ,  H01L33/24 ,  H01L33/44 ,  H01L33/06

Abstract: Provided is a substrate structure including a substrate, a buffer layer disposed on the substrate, a porous semiconductor layer disposed on the buffer layer, the porous semiconductor layer having a plurality of voids, a plurality of semiconductor light emitting structures disposed on the porous semiconductor layer, the plurality of semiconductor light emitting structures having a nanorod shape extending vertically, and a passivation film disposed on a side wall of each of the plurality of semiconductor light emitting structures, the passivation film having an insulation property.