公开(公告)号：EP4216288A1

公开(公告)日：2023-07-26

申请号：EP22206590.6

申请日：2022-11-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： PARK, Younghwan ,  KIM, Joosung ,  SHIN, Dongchul ,  CHOI, Junhee

IPC: H01L33/00 ,  H01L33/08 ,  H01L33/18 ,  H01L33/20 ,  H01L33/24 ,  H01L33/32

Abstract: Provided are nanorod light emitting diodes (LEDs), display apparatuses, and manufacturing methods thereof. The nanorod LED includes a first-type semiconductor layer including a body and a pyramidal structure continuously provided from the body, a nitride light emitting layer provided on the pyramidal structure, and a second-type semiconductor layer provided in the nitride light emitting layer.

公开(公告)号：EP3846223A2

公开(公告)日：2021-07-07

申请号：EP20210064.0

申请日：2020-11-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： CHONG, Soogine ,  KIM, Jongseob ,  KIM, Joonyong ,  PARK, Younghwan ,  PARK, Junhyuk ,  SHIN, Dongchul ,  OH, Jaejoon ,  HWANG, Sunkyu ,  HWANG, Injun

IPC: H01L29/778 ,  H01L21/337 ,  H01L29/423 ,  H01L29/40 ,  H01L29/10 ,  H01L29/20

Abstract: A semiconductor device includes a channel layer (110) including a channel; a channel supply layer (120) on the channel layer; a channel separation pattern (200) on the channel supply layer; a gate electrode pattern (310) on the channel separation pattern; and an electric-field relaxation pattern (320) protruding from a first lateral surface of the gate electrode pattern in a first direction parallel with an upper surface of the channel layer. An interface between the channel layer and the channel supply layer is adjacent to channel. A size of the gate electrode pattern in the first direction is different from a size of the channel separation pattern in the first direction. The gate electrode pattern and the electric-field relaxation pattern form a single structure.

公开(公告)号：EP4496013A1

公开(公告)日：2025-01-22

申请号：EP23220473.5

申请日：2023-12-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： SHIN, Dongchul ,  KIM, Joosung ,  PARK, Junghun

IPC: H01L33/08 ,  H01L33/24

Abstract: A light-emitting device includes a base semiconductor layer, at least one core provided on the base semiconductor layer, the at least one core including a body portion extending in a first direction and a shielding portion provided at an upper end of the body portion, where a width of a lower surface of the shielding portion in a second direction orthogonal to the first direction is greater than a width of the body portion in the second direction, a first insulating layer provided on an upper surface of the base semiconductor layer and an upper surface of the shielding portion, and at least one light-emitting portion provided on a side surface of the body portion.

公开(公告)号：EP4318614A1

公开(公告)日：2024-02-07

申请号：EP22213872.9

申请日：2022-12-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： PARK, Jinjoo ,  KIM, Joosung ,  PARK, Younghwan ,  SHIN, Dongchul

IPC: H01L33/12 ,  H01L33/18 ,  H01L33/24 ,  H01L27/15 ,  H01L33/08 ,  H01L33/32

Abstract: A light-emitting device includes a base semiconductor layer, a three-dimensional (3D) light-emitting structure, and a flat light-emitting structure formed in a flat shape, wherein the flat light-emitting structure generates light having a different wavelength than that of the 3D light-emitting structure. A strain-relieving layer relieving lattice mismatch between the base semiconductor layer and the flat light-emitting structure may be arranged on the base semiconductor layer in an area in which at least the flat light-emitting structure is formed.

公开(公告)号：EP4312273A1

公开(公告)日：2024-01-31

申请号：EP23167342.7

申请日：2023-04-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： CHOI, Junhee ,  KONG, Kiho ,  KIM, Joosung ,  PARK, Younghwan ,  PARK, Jinjoo ,  SHIN, Dongchul

IPC: H01L27/15 ,  H01L25/16 ,  H01L33/00 ,  H01L33/14 ,  H01L33/62 ,  H01L33/08

Abstract: A light emitting structure includes: a substrate; a first epitaxial structure disposed on the substrate; a second epitaxial structure disposed on the first epitaxial structure; and a third epitaxial structure disposed on the second epitaxial structure. Each of the first epitaxial structure, the second epitaxial structure, and the third epitaxial structure comprises, in a sequentially stacked structure, a first semiconductor layer of a first conductivity, a carrier blocking layer, an active layer, and a second semiconductor layer of a second conductivity.

公开(公告)号：EP4109568A1

公开(公告)日：2022-12-28

申请号：EP22178144.6

申请日：2022-06-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： KIM, Joosung ,  PARK, Younghwan ,  SHIN, Dongchul ,  CHOI, Junhee ,  KIM, Nakhyun ,  PARK, Junghun ,  LEE, Eunsung ,  HAN, Joohun

IPC: H01L33/02 ,  H01L33/12

Abstract: A light emitting device may be a bar-type light emitting device and include a n-GaN semiconductor layer, a p-GaN semiconductor layer spaced apart from the n-GaN semiconductor layer, an active layer arranged between the n-GaN semiconductor layer and the p-GaN semiconductor layer, and a strain relaxing layer including indium clusters and voids.

公开(公告)号：EP4507002A1

公开(公告)日：2025-02-12

申请号：EP24178718.3

申请日：2024-05-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： CHOI, Junhee ,  KIM, Joosung ,  SHIN, Dongchul ,  PARK, Junghun

IPC: H01L27/15 ,  H01L33/00 ,  H01L33/04 ,  H01L33/24 ,  H01L33/06 ,  H01L33/18 ,  H01L33/20

Abstract: Provided is a nanorod light-emitting device including a support layer, a first-type semiconductor nanocore protruding from an upper surface of the support layer and including a semiconductor material doped as a first conductivity type, a mask layer on an upper surface of the support layer and extending to a first height of the first-type semiconductor nanocore in a vertical direction and adjacent to a surface of the first-type semiconductor nanocore, a light-emitting layer having a multi-quantum well structure adjacent to a portion of the first-type semiconductor nanocore above the first height in the vertical direction, and a second-type semiconductor layer adjacent to a surface of the light-emitting layer and including a semiconductor material doped as a second conductivity type.

公开(公告)号：EP4398318A1

公开(公告)日：2024-07-10

申请号：EP23215804.8

申请日：2023-12-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： SHIN, Dongchul ,  KIM, Joosung ,  PARK, Younghwan ,  CHOI, Junhee

IPC: H01L33/12 ,  H01L33/24 ,  H01L33/32 ,  H01L25/075 ,  H01L33/06

CPC classification number: H01L33/12 ,  H01L33/32 ,  H01L25/0753 ,  H01L33/04

Abstract: A nitride-based semiconductor light-emitting device, including a first semiconductor layer, wherein the first semiconductor layer is nitride-based and has a first conductivity type; a light-emitting layer provided on the first semiconductor layer, wherein the light-emitting layer may include a nitride-based semiconductor including Indium (In); a second semiconductor layer provided on the light-emitting layer, wherein the second semiconductor layer is nitride-based and has a second conductivity type; and a strain relaxation layer provided between the first semiconductor layer and the light-emitting layer, and including an AlGaN layer having a protrusion whose horizontal cross-section area decreases as the protrusion extends in a vertical direction from the second semiconductor layer to the first semiconductor layer.

公开(公告)号：EP4398306A1

公开(公告)日：2024-07-10

申请号：EP23197424.7

申请日：2023-09-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： PARK, Younghwan ,  KIM, Joosung ,  SHIN, Dongchul

IPC: H01L27/15 ,  H01L33/32 ,  H01L25/16

CPC classification number: H01L27/15 ,  H01L33/32 ,  H01L25/167

Abstract: The present disclosure provides light emitting devices (100) and display apparatuses including the same. In some embodiments, a light emitting device (100) includes a first light emitting element (110) configured to emit light of a first wavelength, a PN junction layer (120) provided on the first light emitting element (110), and a second light emitting element (130) provided on the PN junction layer (120) and configured to emit light of a second wavelength different from the first wavelength. The PN junction layer (120) includes a first conductivity type semiconductor layer (121) provided on the first light emitting element (110) and doped with impurities of a first conductivity type, and a second conductivity type semiconductor layer (122) provided on the first conductivity type semiconductor layer (121) and doped with impurities of a second conductivity type electrically opposite to the first conductivity type.

公开(公告)号：EP4333085A1

公开(公告)日：2024-03-06

申请号：EP23184735.1

申请日：2023-07-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： PARK, Jinjoo ,  KIM, Joosung ,  PARK, Younghwan ,  SHIN, Dongchul

IPC: H01L33/08 ,  H01L33/12

Abstract: A multi-wavelength light-emitting device configured to emit light of a first wavelength, light of a second wavelength, and a third wavelength, includes a substrate, a first type semiconductor layer provided on the substrate, an active layer provided on the first type semiconductor layer, a second type semiconductor layer provided on the active layer, and an electrode provided on the second type semiconductor layer. The active layer includes a first active area configured to emit the light of the first wavelength, a second active area configured to emit the light of the second wavelength, and a third active area configured to emit the light of the third wavelength.