摘要:
Provided is an encapsulation resin composition that is suitable for encapsulating a semiconductor element-mounted surface of a substrate with a semiconductor element(s) mounted thereon or a semiconductor element-forming surface of a wafer with a semiconductor element(s) formed thereon, and is superior in low warpage property and grindability. The encapsulation resin composition of the present invention contains: (A) a maleimide compound having at least one dimer acid frame-derived hydrocarbon group per molecule; (B) a reaction initiator; and (C) an inorganic filler surface-treated with a silane coupling agent, wherein the component (C) has a maximum particle size of not larger than 40 µm.
摘要:
Provided is a semiconductor encapsulation resin composition exhibiting an insignificant heat decomposition when left under a high temperature of 200 to 250°C for a long period of time; and a superior reliability and adhesion to a Cu LF and Ag plating under a high-temperature and high-humidity environment. The composition comprises: (A) a cyanate ester compound having not less than two cyanato groups in one molecule; (B) a phenolic compound; (C) at least one epoxy resin; (D) a copolymer obtained by a hydrosilylation reaction of an alkenyl group-containing epoxy compound and an organopolysiloxane; and (E) at least one compound selected from a tetraphenylborate salt of a tetra-substituted phosphonium compound and a tetraphenylborate salt, wherein the molar ratio of phenolic hydroxyl groups in (B) to cyanato groups in (A) is 0,08 to 0,25, and the molar ratio of epoxy groups in (C) and (D) to cyanato groups in (A) is 0,04 to 0,25.
摘要:
Provided are a resin composition for encapsulation that is superior in high-temperature reverse bias test (HTRB test) reliability; and a semiconductor device. The resin composition for encapsulation is used to encapsulate a power semiconductor element made of Si, SiC, GaN, Ga 2 O 3 or diamond, and a cured product of the resin composition for encapsulation has a dielectric tangent of not larger than 0.50 when measured at 150°C and 0.1 Hz. The semiconductor device is such that a power semiconductor element made of Si, SiC, GaN, Ga 2 O 3 or diamond is encapsulated by the cured product of the resin composition for encapsulation.
摘要:
Provided is a semiconductor encapsulation resin composition exhibiting an insignificant heat decomposition when left under a high temperature of 200 to 250°C for a long period of time; and a superior reliability and adhesion to a Cu LF and Ag plating under a high-temperature and high-humidity environment. The composition comprises: (A) a cyanate ester compound having not less than two cyanato groups in one molecule; (B) a phenolic compound; (C) at least one epoxy resin; (D) a copolymer obtained by a hydrosilylation reaction of an alkenyl group-containing epoxy compound and an organopolysiloxane; and (E) at least one compound selected from a tetraphenylborate salt of a tetra-substituted phosphonium compound and a tetraphenylborate salt, wherein the molar ratio of phenolic hydroxyl groups in (B) to cyanato groups in (A) is 0,08 to 0,25, and the molar ratio of epoxy groups in (C) and (D) to cyanato groups in (A) is 0,04 to 0,25.
摘要:
The present invention provides a silicone resin composition for an optical semiconductor device, comprising (A) 100 parts by weight of an organopolysiloxane having a weight average molecular weight of from 500 to 20000, reduced to polystyrene, and represented by the following average compositional formula (1),
(CH 3 ) a Si(OR 1 ) b (OH) c O (4-a-d-c)/2 (1)
wherein R 1 is an organic group having 1 to 4 carbon atoms and a, b, and c are numbers satisfying the equations: 0.8 ≦ a ≦ 1.5, 0 ≦ b ≦ 0.3, 0.001 ≦ c ≦ 0.5, and 0.801 ≦ a + b + c (B) 3 to 200 parts by weight of a white pigment, (C) 400 to 1000 parts by weight of an inorganic filler other than said white pigment, (D) 0.01 to 10 parts by weight of a condensation catalyst, and (E) 2 to 50 parts by weight of an organopolysiloxane comprising a linear diorganopolysiloxane moiety represented by the following formula (2),
wherein R 2 and R 3 are, independently of each other, a group selected from the group consisting of a hydroxyl group, an alkyl group having 1 to 3 carbon atoms, a cyclohexyl group, a vinyl group, a phenyl group and an allyl group, and wherein m is an integer of from 5 to 50.
摘要翻译:本发明提供一种光学半导体装置用有机硅树脂组合物,其包含(A)100重量份的重均分子量为500〜20000的有机聚硅氧烷,还原为聚苯乙烯,并由以下平均组成式( 1),€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ(CH 3)a Si(OR 1)b(OH)c O(4-adc)/ 2€ƒ€ƒ€ƒ (1)其中R 1是具有1至4个碳原子的有机基团,a,b和c是满足以下等式的数字:0.8‰| a‰| 1.5,0‰| b‰| 0.3,0.001‰| c‰| 0.5和0.801‰| a + b + c <2,(B)3〜200重量份白色颜料,(C)400〜1000重量份除了所述白色颜料以外的无机填料, (D)0.01〜10重量份的缩合催化剂,(E)2〜50重量份的由下述通式(2)表示的直链二有机聚硅氧烷部分的有机聚硅氧烷,其中,R 2和R 3 a 独立地选自由羟基,具有1至3个碳原子的烷基,环己基,乙烯基,苯基和烯丙基组成的组中的基团,其中m是 从5到50的整数。
摘要:
An epoxy resin composition for encapsulating a semiconductor device is provided. This composition contains the following components (A), (C), (D), (E), (F) and (G) as critical components: (A) an epoxy resin; (C) an inorganic filler; (D) a curing accelerator of the general formula (1):
(E) a radical initiator; (F) a compound having at least two maleimide group per molecule; and (G) a phenol compound having at least one alkenyl group per molecule.