ENCAPSULATION DE COMPOSANTS ELECTRONIQUES DANS DES MATERIAUX POLYMERES
    6.
    发明公开
    ENCAPSULATION DE COMPOSANTS ELECTRONIQUES DANS DES MATERIAUX POLYMERES 审中-公开
    封装电子元件DANS DES MATERIAUX聚合物

    公开(公告)号:EP3224320A1

    公开(公告)日:2017-10-04

    申请号:EP15798036.8

    申请日:2015-11-19

    IPC分类号: C08L83/04 H01L23/29

    摘要: The invention relates to an electronic component (1) comprising at least one semiconductor chip (4) and at least one substrate (6), the semiconductor chip (4) being encapsulated in a polyorganosiloxane resin (3), which is the result of hardening a composition comprising at least: one portion (A) comprising at least one polyorganosiloxane (A1) which contains at least two -CH = CH
    2 reactive groups per molecule; one portion (B) comprising a polyorganosiloxane (B1) which comprises at least two Si-H groups per molecule; and at least one hydrosilylation catalyst (C1), the components (A1) and (B1) being in quantities such that the molar ratio of Si-H / -CH = CH
    2 in the composition is no lower than 0.4.

    摘要翻译: 本发明涉及包括至少一个半导体芯片(4)和至少一个衬底(6)的电子部件(1),半导体芯片(4)被封装在聚有机硅氧烷树脂(3)中,这是硬化 一种组合物,其至少包括:一个部分(A),其包含每分子含有至少两个-CH = CH 2反应性基团的至少一种聚有机硅氧烷(A1) 一部分(B)包含每分子包含至少两个Si-H基团的聚有机硅氧烷(B1) 和至少一种氢化硅烷化催化剂(C1),组分(A1)和(B1)的量使得组合物中Si-H / -CH = CH 2的摩尔比不低于0.4。

    METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE
    10.
    发明公开
    METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
    VERFAHREN ZUR HERSTELLUNG EINES LICHTEMITTIERENDEN HALBLEITERBAUELENTS

    公开(公告)号:EP3101698A4

    公开(公告)日:2017-06-28

    申请号:EP15743494

    申请日:2015-01-20

    IPC分类号: H01L33/56 H01L33/48 H01L33/52

    摘要: A method for producing a semiconductor light-emitting device comprising a substrate, an element and an encapsulating material as constituent members, comprising a first step of providing the substrate with the element; a second step of potting un uncured encapsulating material onto the substrate to cover the element; and a third step of curing the potted encapsulating material in such a manner that all of the following formulae (1), (2) and (3) are satisfied when the absorbances which a cured encapsulating material having a thickness of t [nm] has at wavelengths of 380 nm, 316 nm and 260 nm are represented by Abs A (t), Abs B (t) and Abs C (t), respectively and the light transmittance thereof at 380 nm is represented by T(t): T 1.7 ‰¥ 90 % Abs B t ˆ’ Abs A t

    摘要翻译: 一种半导体发光元件的制造方法,其特征在于,具备:第一工序,在所述基板上形成所述元件; 将未固化的封装材料封装在基板上以覆盖元件的第二步骤; 以及第三步骤,以使得固化的具有厚度t [nm]的密封材料的吸光度满足以下所有式(1),(2)和(3)的方式固化所述封装材料 在380nm,316nm和260nm的波长分别由Abs A(t),Abs B(t)和Abs C(t)表示,并且其在380nm处的光透射率由T(t)表示:T 1.7‰¥90%Abs B t'Abs A t <0.011 t Abs C t'Abs A t <0.125 t。