公开(公告)号：EP1580821A2

公开(公告)日：2005-09-28

申请号：EP02802009.7

申请日：2002-10-11

申请人： SONY CORPORATION

发明人： OHBA, Kazuhiro, c/o Sony Corporation ,  HAYASHI, Kazuhiko, c/o Sony Corporation ,  KANO, Hiroshi, c/o Sony Corporation ,  BESSHO, Kazuhiro, c/o Sony Corporation ,  MIZUGUCHI, Tetsuya, c/o Sony Corporation ,  HIGO, Yutaka, c/o Sony Corporation ,  HOSOMI, Masanori, c/o Sony Corporation ,  YAMAMOTO, Tetsuya, c/o Sony Corporation ,  NARISAWA, Hiroaki, c/o Sony Corporation ,  SONE, Takeyuki, c/o Sony Corporation ,  ENDO, Keitaro, c/o Sony Corporation ,  KUBO, Shinya, c/o Sony Corporation

IPC分类号： H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  H01L27/105 ,  G11B5/39 ,  G01R33/09 ,  H01F10/16 ,  C23C14/14

CPC分类号： H01L27/228 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3909 ,  G11C11/161 ,  G11C11/1657 ,  G11C11/1659 ,  G11C2029/5002 ,  H01F10/3204 ,  H01F10/3254 ,  H01F41/18 ,  H01F41/302 ,  H01L43/10 ,  H01L43/12

摘要： In a magnetoresistive effect element using a ferromagnetic tunnel junction having a tunnel barrier layer sandwiched between at least a pair of ferromagnetic layers, a magnetization free layer comprising one of the ferromagnetic layers is composed of a single layer of a material having an amorphous or microcrystal structure or a material layer the main portion of which has an amorphous or microcrystal structure. The magnetoresistive effect element can produce excellent magnetic-resistance characteristics, and a magnetic memory element and a magnetic memory device using the magnetoresistive effect element as a memory element thereof can improve both of write and read characteristics at the same time.

公开(公告)号：EP1526588A1

公开(公告)日：2005-04-27

申请号：EP03766709.4

申请日：2003-08-01

申请人： Sony Corporation

发明人： OBA, Kazuhiro, c/o Sony Corporation ,  KANO, Hiroshi, c/o Sony Corporation ,  HOSOMI, Masanori, c/o Sony Corporation ,  BESSHO, Kazuhiro, c/o Sony Corporation ,  YAMAMOTO, Tetsuya, c/o Sony Corporation ,  MIZUGUCHI, Tetsuya, c/o Sony Corporation

IPC分类号： H01L43/08 ,  H01L27/105 ,  G11B5/39 ,  G01R33/09 ,  H01F10/13 ,  H01F10/32

CPC分类号： H01L27/228 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11C11/15 ,  G11C11/16 ,  H01F10/3204 ,  H01F10/3254 ,  H01F10/3277 ,  H01L43/10

摘要： A magnetoresistive effect element may be given satisfactory magnetic characteristics because a deterioration of a magnetoresistive changing rate by annealing can be suppressed and a magnetic memory device includes this magnetoresistive effect element to provide excellent write characteristics.
A magnetoresistive effect element has a pair of ferromagnetic layers (magnetization fixed layer 5 and magnetization free layer 7) opposed to each other through an intermediate layer 6 to cause an electric current to flow in the direction perpendicular to the layer surface to obtain a magnetoresistive change. A magnetic memory device comprises the magnetoresistive effect element 1 in which at least one of the pair of ferromagnetic layers 5, 7 contains an amorphous ferromagnetic material whose crystallization temperature is higher than 623k and bit lines and word lines sandwiching this magnetoresistive effect element and the magnetoresistive effect element in the thickness direction.