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公开(公告)号：EP2166581A3
公开(公告)日：2011-08-24
申请号：EP10150310.0
申请日：2005-09-05
发明人： Djayaprawira, David D , Tsunekawa, Koji , Nagai, Motonobu , Maehara, Hiroki , Yamagata, Shinji , Watanabe, Naoki , Yuasa, Shinji
CPC分类号： H01L43/12 , B82Y25/00 , B82Y40/00 , C23C14/081 , C23C14/34 , G11C11/16 , G11C11/161 , H01F10/3204 , H01F10/3254 , H01F41/18 , H01F41/307 , H01L43/08
摘要： A magnetoresistance effect device including a multilayer structure having a pair of ferromagnetic layers and a barrier layer positioned between them, wherein at least one ferromagnetic layer has at least the part contacting the barrier layer made amorphous and the barrier layer is an MgO layer having a single crystal structure.
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公开(公告)号：EP1526588A4
公开(公告)日：2010-03-24
申请号：EP03766709
申请日：2003-08-01
申请人： SONY CORP
发明人： OBA KAZUHIRO , KANO HIROSHI , HOSOMI MASANORI , BESSHO KAZUHIRO , YAMAMOTO TETSUYA , MIZUGUCHI TETSUYA
IPC分类号： G01R33/09 , G11C11/15 , G11C11/16 , H01F10/13 , H01F10/32 , H01L21/8246 , H01L27/105 , H01L27/22 , H01L43/08 , H01L43/10 , G11B5/39
CPC分类号： H01L27/228 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11C11/15 , G11C11/16 , H01F10/3204 , H01F10/3254 , H01F10/3277 , H01L43/10
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3.发明公开MEMOIRE MAGNETIQUE A ECRITURE PAR COURANT POLARISE EN SPIN, METTANT EN OEUVRE DES ALLIAGES AMORPHES FERRIMAGNETIQUES ET PROCEDE POUR SON ECRITURE 有权磁存储设备，可写的自旋极化电路中使用非晶FERRI磁性合金和写作过程中在该存储器中安排
公开(公告)号：EP1430484A2
公开(公告)日：2004-06-23
申请号：EP02798773.4
申请日：2002-09-19
CPC分类号： H01L43/10 , B82Y25/00 , G11C11/16 , H01F10/3204 , H01F10/3268 , H01F10/3286 , H01F10/329 , H01L27/226
摘要： The invention concerns a magnetic memory, whereof each memory point consists of a magnetic tunnel junction ( 60 ), comprising: a magnetic layer, called trapped layer ( 61 ), whereof the magnetization is rigid; a magnetic layer, called free layer ( 63 ), whereof the magnetization may be inverse; and insulating layer ( 62 ), interposed between the free layer ( 73 ) and the trapped layer ( 71 ) and respectively in contact with said two layers. The free layer ( 63 ) is made with an amorphous or nanocrytallized alloy based on rare earth or a transition metal, the magnetic order of said alloy being of the ferromagnetic type, said free layer having a substantially planar magnetization.
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4.发明公开
公开(公告)号：EP0791915A2
公开(公告)日：1997-08-27
申请号：EP97102826.1
申请日：1997-02-21
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/39 , G11B5/3903 , G11B2005/3996 , H01F10/3204 , H01F10/3268 , H01L43/08
摘要： A magnetoresistive device of the present invention includes: a soft magnetic layer; a hard magnetic layer; a non-magnetic layer formed between the soft magnetic layer and the hard magnetic layer; and an interface magnetic layer, provided at an interface between the soft magnetic layer and the non-magnetic layer, for enhancing magnetic scattering, wherein the soft magnetic layer includes an amorphous structure.
摘要翻译： 本发明的磁阻装置包括：软磁性层; 硬磁层; 形成在软磁性层和硬磁性层之间的非磁性层; 以及界面磁性层，其设置在所述软磁性层与所述非磁性层之间的界面处，用于增强磁散射，其中所述软磁性层包括非晶结构。
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公开(公告)号：EP0441186A3
公开(公告)日：1992-07-08
申请号：EP91100872.0
申请日：1991-01-24
发明人： Canaperi, Donald Francis , Krishnan, Mahadevaiyer, , Krongelb, Sol , Rath, David Lee , Romankiw, Lubomyr Taras
CPC分类号： B82Y25/00 , G11B5/3113 , H01F10/32 , H01F10/3204 , Y10S428/90 , Y10T428/1171 , Y10T428/12465 , Y10T428/12854 , Y10T428/12931 , Y10T428/26 , Y10T428/265
摘要： Laminates of magnetic and magnetic quenching laminae are provided for use as magnetic thin film laminates for use in magnetic recording heads. The use of these films significantly reduces the number of domains and Barkhausen noise levels in such recording heads.
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6.发明公开
公开(公告)号：EP0147126A3
公开(公告)日：1986-07-23
申请号：EP84308602
申请日：1984-12-11
申请人： HITACHI, LTD.
发明人： Kumasaka, Noriyuki , Shiiki, Kazuo , Shiroishi, Yoshihiro , Yamashita, Takeo , Saito, Noritoshi , Shinagawa, Kiminari , Kudo, Mitsuhiro , Otomo, Shigekazu
IPC分类号： H01F10/00 , G11B05/31 , G11B05/21 , G11B05/147
CPC分类号： B82Y25/00 , G11B5/1278 , G11B5/147 , G11B5/21 , G11B5/31 , H01F10/13 , H01F10/3204 , Y10S428/926 , Y10S428/928 , Y10T428/115 , Y10T428/12632 , Y10T428/12861 , Y10T428/12937 , Y10T428/12944 , Y10T428/12951
摘要： A multilayered ferromagnetic amorphous alloy film is constituted by a plurality of main ferromagnetic material alloy films of a ferromagnetic amorphous alloy laminated one upon another with a spacer ferromagnetic material layer interposed therebetween, the spacer ferromagnetic material layer being of a ferromagnetic material different from the ferromagnetic alloy. The multilayered film has excellent magnetic characteristics and is easily patterned and can be used in at least a portion of a core of a magnetic head.
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7.发明授权Charged wall amorphous magnetic layers and magnetic bubble devices comprising such layers 失效充电墙非晶磁性层和包含这种层的磁性泡沫装置
公开(公告)号：EP0035622B1
公开(公告)日：1985-07-03
申请号：EP81100085.0
申请日：1981-01-08
CPC分类号： B82Y25/00 , H01F10/00 , H01F10/3204 , H01F10/3286
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公开(公告)号：EP2166581A8
公开(公告)日：2010-08-11
申请号：EP10150310.0
申请日：2005-09-05
发明人： Djayaprawira, David D , Tsunekawa, Koji , Nagai, Motonobu , Maehara, Hiroki , Yamagata, Shinji , Watanabe, Naoki , Yuasa, Shinji
CPC分类号： H01L43/12 , B82Y25/00 , B82Y40/00 , C23C14/081 , C23C14/34 , G11C11/16 , G11C11/161 , H01F10/3204 , H01F10/3254 , H01F41/18 , H01F41/307 , H01L43/08
摘要： A magnetoresistance effect device including a multilayer structure having a pair of ferromagnetic layers and a barrier layer positioned between them, wherein at least one ferromagnetic layer has at least the part contacting the barrier layer made amorphous and the barrier layer is an MgO layer having a single crystal structure.
摘要翻译： 一种磁阻效应器件，包括具有一对铁磁层和位于它们之间的阻挡层的多层结构，其中至少一个铁磁层至少使与阻挡层接触的部分形成为非晶的，并且阻挡层是具有单一的MgO层 晶体结构。
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公开(公告)号：EP1973178A3
公开(公告)日：2009-07-08
申请号：EP08159511.8
申请日：2005-09-05
发明人： Djayaprawira, David D , Tsunekawa, Koji , Nagai, Motonobu , Maehara, Hiroki , Yamagata, Shinji , Watanabe, Naoki c/o Canon Anelva Corporation , Yuasa, Shinji
CPC分类号： H01L43/12 , B82Y25/00 , B82Y40/00 , C23C14/081 , C23C14/34 , G11C11/16 , G11C11/161 , H01F10/3204 , H01F10/3254 , H01F41/18 , H01F41/307 , H01L43/08
摘要： A magnetoresistance effect device (10) including a multilayer structure (12) having a pair of ferromagnetic layers and a barrier layer positioned between them, wherein at least one ferromagnetic layer has at least the part contacting the barrier layer made amorphous and the barrier layer is an MgO layer having a single crystal structure.
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10.发明授权Magnetoresistance effect device and method of production of the same 有权Magnetoresistives Bauelement und dessen Herstellungsverfahren
公开(公告)号：EP1633007B1
公开(公告)日：2009-05-20
申请号：EP05077020.5
申请日：2005-09-05
发明人： Djayaprawira, David D. , Tsunekawa, Koji , Nagai, Motonobu , Maehara, Hiroki , Yamagata, Shinji, c/o A207 Anelva Musashinodai-ryo , Watanabe, Naoki , Yuasa, Shinji
CPC分类号： H01L43/12 , B82Y25/00 , B82Y40/00 , C23C14/081 , C23C14/34 , G11C11/16 , G11C11/161 , H01F10/3204 , H01F10/3254 , H01F41/18 , H01F41/307 , H01L43/08
摘要： A magnetoresistance effect device including a multilayer structure having a pair of ferromagnetic layers and a barrier layer positioned between them, wherein at least one ferromagnetic layer has at least the part contacting the barrier layer made amorphous and the barrier layer is an MgO layer having a single crystal structure.
摘要翻译： 一种磁电阻效应器件，包括具有一对铁磁层和位于它们之间的阻挡层的多层结构，其中至少一个铁磁层至少具有与阻挡层接触的部分成为无定形的部分，阻挡层是具有单个 晶体结构。
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