公开(公告)号：EP2642621A1

公开(公告)日：2013-09-25

申请号：EP11840902.8

申请日：2011-11-11

申请人： Sony Corporation

发明人： TANGE, Takashi ,  TOMIYA, Shigetaka

IPC分类号： H01S5/028 ,  H01S5/323

CPC分类号： H01S5/0282 ,  B82Y20/00 ,  H01S5/0021 ,  H01S5/028 ,  H01S5/22 ,  H01S5/343

摘要： The present invention relates to a semiconductor laser device capable of reliably suppressing degradation of an end face due to interface oxidation and distortion application, and to a manufacturing method of the same.
The semiconductor laser device has a laser structure portion 107 having opposite resonator faces 108 and 109, and protecting films 110 and 120 formed on at least one of the opposite resonator end faces, wherein the protecting films 110 and 120 are formed of nitride dielectric films having a multistage structure including amorphous layers 111 and 121 and polycrystal layers 112 and 122 in crystal structure, respectively, from a side in contact with the resonator faces.

摘要翻译： 本发明涉及能够可靠地抑制由于界面氧化和变形应用引起的端面劣化的半导体激光器件及其制造方法。 半导体激光器件具有激光结构部分107，其具有相对的谐振器面108和109，以及形成在至少一个相对的谐振器端面上的保护膜110和120，其中保护膜110和120由氮化物绝缘膜形成， 分别从与谐振器面接触的一侧分别包括晶体结构的非晶层111和121以及多晶层112和122的多级结构。

公开(公告)号：EP1441426B1

公开(公告)日：2018-06-13

申请号：EP02772973.0

申请日：2002-10-03

申请人： Sumitomo Electric Industries, Ltd. ,  Sony Corporation

发明人： ASATSUMA, Tsunenori ,  TOMIYA, Shigetaka ,  TAMAMURA, Koshi ,  TOJO, Tsuyoshi ,  GOTO, Osamu ,  MOTOKI, K.

IPC分类号： H01S5/343 ,  H01L33/00 ,  H01L21/205 ,  H01L21/02 ,  H01S5/22 ,  H01S5/323 ,  H01S5/40 ,  H01S5/02 ,  B82Y20/00 ,  C30B25/02 ,  C30B29/40 ,  H01L33/02 ,  H01L33/32 ,  H01S5/20 ,  H01S5/223

CPC分类号： C30B25/02 ,  B82Y20/00 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02664 ,  H01L33/007 ,  H01L33/0095 ,  H01L33/025 ,  H01L33/32 ,  H01S5/0207 ,  H01S5/0213 ,  H01S5/2036 ,  H01S5/22 ,  H01S5/2201 ,  H01S5/2231 ,  H01S5/32341 ,  H01S5/34333 ,  H01S5/4031 ,  H01S2301/173

摘要： When a semiconductor light emitting device or a semiconductor device is manufactured by growing nitride III-V compound semiconductor layers, which will form a light emitting device structure or a device structure, on a nitride III-V compound semiconductor substrate composed of a first region in form of a crystal having a first average dislocation density and a plurality of second regions having a second average dislocation density higher than the first average dislocation density and periodically aligned in the first region, device regions are defined on the nitride III-V compound semiconductor substrate such that the device regions do not substantially include second regions, emission regions or active regions of devices finally obtained do not include second regions.

公开(公告)号：EP3072189A1

公开(公告)日：2016-09-28

申请号：EP14802955.6

申请日：2014-11-10

申请人： Sony Corporation

发明人： TASAI, Kunihiko ,  NAKAYAMA, Eiji ,  NAKAYAMA, Yuusuke ,  TOMIYA, Shigetaka

IPC分类号： H01S5/10 ,  H01S5/32 ,  H01S5/343

CPC分类号： H01S5/34333 ,  H01S5/0202 ,  H01S5/1085 ,  H01S5/22 ,  H01S5/3202

摘要： There is provided a light-emitting element including a laminated structure including a first compound semiconductor layer having a first conductivity type, a second compound semiconductor layer having a second conductivity type different than the first conductivity type, and a third compound semiconductor layer formed between the first and second compound semiconductor layers and including an active layer. A second end surface of the second compound semiconductor layer and a third end surface of the third compound semiconductor layer are formed at respective second and third angles theta2 and theta3 relative to a virtual vertical direction of the laminated structure and satisfy the following relationship: “absolute value of theta3 is equal to or greater than 0 degree and smaller than absolute value of theta2”.

摘要翻译： 提供了一种发光元件，其包括层压结构和第三化合物半导体层，所述层压结构包括具有第一导电类型的第一化合物半导体层，具有不同于第一导电类型的第二导电类型的第二化合物半导体层以及形成在 第一和第二化合物半导体层并且包括有源层。 第二化合物半导体层的第二端面和第三化合物半导体层的第三端面相对于叠层结构的虚拟垂直方向以各自的第二和第三角度θ2和θ3形成，并且满足以下关系：“绝对的 θ3的值等于或大于0度并且小于θ2的绝对值“。

公开(公告)号：EP3072189B1

公开(公告)日：2019-07-03

申请号：EP14802955.6

申请日：2014-11-10

申请人： Sony Corporation

发明人： TASAI, Kunihiko ,  NAKAYAMA, Eiji ,  NAKAYAMA, Yuusuke ,  TOMIYA, Shigetaka

IPC分类号： H01S5/10 ,  H01S5/32 ,  H01S5/343

公开(公告)号：EP3285326A1

公开(公告)日：2018-02-21

申请号：EP16834846.4

申请日：2016-05-09

申请人： Sony Corporation

发明人： TANAKA, Masatomo ,  SHIMIZU, Yoshifumi ,  HORIUCHI, Yuto ,  TOMIYA, Shigetaka

IPC分类号： H01M10/48 ,  H01M10/44 ,  H02J7/00 ,  H01M10/42

CPC分类号： H01M10/44 ,  G01R31/3624 ,  G01R31/3627 ,  H01M10/0525 ,  H01M10/42 ,  H01M10/425 ,  H01M10/48 ,  H01M2010/4271 ,  H02J7/0068 ,  H02J7/007

摘要： Provided is a technology that can improve a cycle property without lowering a volume energy density.
The present technology provides a method for evaluating a secondary battery, including conducting at least: a determination step of determining a degree of diffusion defect of an ion that performs electric conduction; an evaluation step of evaluating a state of the secondary battery on the basis the result of the determination in the determination step; and a control step of controlling states of current application and voltage application on the secondary battery during charging or during discharging of the secondary battery on the basis of the result of the evaluation in the evaluation step.

摘要翻译： 提供了一种能够在不降低体积能量密度的情况下改善循环特性的技术。 本发明提供了一种用于评估二次电池的方法，包括至少执行：确定步骤，用于确定执行导电的离子的扩散缺陷的程度; 基于确定步骤中的确定结果评估二次电池的状态的评估步骤; 以及控制步骤，基于评估步骤中的评估结果，控制充电期间或二次电池的放电期间在二次电池上施加的电流和电压的状态。