摘要:
The invention relates to a dielectric element comprising a lower electrode; a dielectric film provided on the lower electrode; and an upper electrode provided on the dielectric film, wherein the upper electrode is composed of one or more of Cu, Ni, Al, and Ag, the lower electrode is composed of one or more of Cu, Ni, Al, and Ag, the dielectric is composed of an oxide including one or more of Ba, Sr, Ca, Pb,Ti, Zr, and Hf, the dielectric has a dielectric constant of 900 or greater, and the leak current density of the dielectric element is equal to or less than 1 × 10 -6 A / cm 2 . The invention further relates to the use of said dielectric element as a thin film capacitor
摘要:
A method for manufacturing a capacitor including the steps of: preparing a lower electrode; forming a dielectric on the lower electrode to fabricate a first laminated structure; annealing the first laminated structure; forming an upper electrode on a dielectric film to fabricate a second laminated structure; and annealing the second laminated structure under a reduced pressure atmosphere at a temperature of 150°C or higher.
摘要:
A multilayer structure (10) which comprises a first metal conductor (12), a dielectric (14) provided on the first conductor, and an intermediate region (16) positioned between the first conductor (12) and the dielectric (14). The intermediate region is obtained by a thermal process and corresponds to an additive element different from the element of the first conductor and the dielectric. The additive is mixed with the first conductor and forms with the conductor and the dielectric an intermediate region (16). The additive contains at least one element selected from the group consisting of Si, Al, P, Mg, Mn, Y, V, Mo, Co, Nb, Fe, and Gr, or an oxide of these elements.
摘要:
A capacitor provided with a dielectric film, and a first electrode and second electrode formed sandwiching it and facing each other, wherein the dielectric film has a density exceeding 72% of the theoretical density calculated based on the lattice constant, and either or both of said first electrode and said second electrode contain at least one metal selected from the group consisting of Cu, Ni, Al, stainless steel and inconel.
摘要:
A method for manufacturing a capacitor including the steps of: preparing a lower electrode; forming a dielectric on the lower electrode to fabricate a first laminated structure; annealing the first laminated structure; forming an upper electrode on a dielectric film to fabricate a second laminated structure; and annealing the second laminated structure under a reduced pressure atmosphere at a temperature of 150°C or higher.
摘要:
A capacitor provided with a dielectric film, and a first electrode and second electrode formed sandwiching it and facing each other, wherein the dielectric film has a density exceeding 72% of the theoretical density calculated based on the lattice constant, and either or both of said first electrode and said second electrode contain at least one metal selected from the group consisting of Cu, Ni, Al, stainless steel and inconel.
摘要:
An electronic part comprises a main part, a terminal electrode, and a film. The main part includes a sintered piezoelectric ceramic element, wherein a plurality of internal electrode layers and piezoelectric layers are alternately stacked. The terminal electrode is provided at an edge of the sintered piezoelectric ceramic element and electrically conducting to the internal electrodes. The film is provided on a surface of the sintered piezoelectric ceramic element and the exposed internal electrodes, and is made of a glass insulating material.
摘要:
The invention relates to a dielectric element comprising a lower electrode; a dielectric film provided on the lower electrode; and an upper electrode provided on the dielectric film, wherein the upper electrode is composed of one or more of Cu, Ni, Al, and Ag, the lower electrode is composed of one or more of Cu, Ni, Al, and Ag, the dielectric is composed of an oxide including one or more of Ba, Sr, Ca, Pb,Ti, Zr, and Hf, the dielectric has a dielectric constant of 900 or greater, and the leak current density of the dielectric element is equal to or less than 1 × 10 -6 A / cm 2 . The invention further relates to the use of said dielectric element as a thin film capacitor
摘要翻译:本发明涉及一种包括下电极的电介质元件; 设置在下电极上的电介质膜; 设置在电介质膜上的上电极,其中上电极由Cu,Ni,Al和Ag中的一种或多种构成,下电极由Cu,Ni,Al和Ag中的一种或多种组成, 电介质由包含Ba,Sr,Ca,Pb,Ti,Zr和Hf中的一种或多种的氧化物组成,电介质的介电常数为900或更大,并且电介质元件的漏电流密度等于或等于 小于1×10 -6 A / cm 2。 本发明还涉及所述介质元件作为薄膜电容器的用途