-
1.发明公开RE-CRYSTALLIZATION OF SEMICONDUCTOR SURFACE FILM AND DOPING OF SEMICONDUCTOR BY ENERGETIC CLUSTER IRRADIATION 审中-公开再结晶半导体表面薄膜和半导体掺杂BY辐射能量CLUSTER
公开(公告)号：EP1584104A4
公开(公告)日：2010-05-26
申请号：EP03799903
申请日：2003-12-12
申请人： TEL EPION INC
IPC分类号： H01L21/425 , H01J37/317 , H01L21/20 , H01L21/26 , H01L21/263 , H01L21/265 , H01L21/302 , H01L21/324 , H01L21/44
CPC分类号： H01L21/2636 , H01J37/317 , H01J2237/0812 , H01L21/2022
摘要： Method of gas-cluster ion beam 128 processing of damaged semiconductor films 308 for re-crystallization and/or for activating a dopant in a semiconductor film 308 with reduced dopant diffusion, and semiconductor devices formed using the method. The method is useful, for example, for restoring crystallinity and/or for electrically activating a dopant species after shallow dopant ion implantation for forming shallow junctions. In one embodiment of the method, dopant atoms incorporated into the gas-clusters produces shallow doping of a semiconductor 302 with simultaneous electrical activation of the dopant atoms and re-crystallization of the semiconductor.
-
2.发明公开METHOD AND APPARATUS FOR SMOOTHING THIN CONDUCTIVE FILMS BY GAS CLUSTER ION BEAM 审中-公开方法和设备，用于平滑金属薄膜BY GASKLUSTERIONENSTRAHLEN
公开(公告)号：EP1238119A4
公开(公告)日：2010-04-21
申请号：EP00992625
申请日：2000-12-05
申请人： TEL EPION INC
IPC分类号： C23C14/32 , C23C14/22 , G11B5/39 , G11B5/84 , H01F41/30 , H01J37/305 , H01L21/321 , H01L43/08 , H01L43/12 , C23C14/34
CPC分类号： B82Y25/00 , B82Y40/00 , C23C14/221 , G11B5/84 , H01F41/308 , H01J2237/0812 , H01L21/32115
-
搜索结果
2 条记录 (耗时 0.007 秒)
