公开(公告)号：EP1815507A4

公开(公告)日：2010-10-06

申请号：EP05848887

申请日：2005-11-08

申请人： TEL EPION INC

发明人： GEFFKEN ROBERT M ,  HAUTALA JOHN J ,  SHERMAN STEVEN R ,  LEARN ARTHUR J

IPC分类号： H01L21/44 ,  H01L21/768 ,  H01L23/40 ,  H01L23/48 ,  H01L23/52

CPC分类号： H01L21/76867 ,  C23C14/0605 ,  C23C14/0635 ,  C23C14/0652 ,  C23C14/221 ,  C23C16/26 ,  C23C16/325 ,  C23C16/345 ,  C23C16/513 ,  H01J2237/0812 ,  H01L21/02074 ,  H01L21/02301 ,  H01L21/02304 ,  H01L21/321 ,  H01L21/32136 ,  H01L21/76822 ,  H01L21/76825 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76865 ,  H01L21/76883 ,  H01L21/76886 ,  H01L2924/0002 ,  H01L2924/00

公开(公告)号：EP1584104A4

公开(公告)日：2010-05-26

申请号：EP03799903

申请日：2003-12-12

申请人： TEL EPION INC

发明人： KIRKPATRICK ALLEN R ,  HAUTALA JOHN J ,  TABAT MARTIN D ,  TETREAULT THOMAS G ,  KIRKPATRICK SEAN

IPC分类号： H01L21/425 ,  H01J37/317 ,  H01L21/20 ,  H01L21/26 ,  H01L21/263 ,  H01L21/265 ,  H01L21/302 ,  H01L21/324 ,  H01L21/44

CPC分类号： H01L21/2636 ,  H01J37/317 ,  H01J2237/0812 ,  H01L21/2022

摘要： Method of gas-cluster ion beam 128 processing of damaged semiconductor films 308 for re-crystallization and/or for activating a dopant in a semiconductor film 308 with reduced dopant diffusion, and semiconductor devices formed using the method. The method is useful, for example, for restoring crystallinity and/or for electrically activating a dopant species after shallow dopant ion implantation for forming shallow junctions. In one embodiment of the method, dopant atoms incorporated into the gas-clusters produces shallow doping of a semiconductor 302 with simultaneous electrical activation of the dopant atoms and re-crystallization of the semiconductor.

公开(公告)号：EP1723667A4

公开(公告)日：2009-09-09

申请号：EP05713405

申请日：2005-02-14

申请人： TEL EPION INC

发明人： BORLAND JOHN O ,  HAUTALA JOHN J ,  SKINNER WESLEY J ,  TABAT MARTIN D

IPC分类号： H01L21/00 ,  H01L21/265 ,  H01L21/302 ,  H01L21/31 ,  H01L21/322 ,  H01L31/0328

CPC分类号： H01L21/265 ,  H01J2237/0812 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/26566 ,  H01L29/7842

摘要： Methods and apparatus are described for irradiating one or more substrate surfaces with accelerated gas clusters including strain-inducing atoms for blanket and/or localized introduction of such atoms into semiconductor substrates, with additional, optional introduction of dopant atoms and/or C. Processes for forming semiconductor films infused into and/or deposited onto the surfaces of semiconductor and/or dielectric substrates are also described. Such films may be doped and/or strained as well.

公开(公告)号：EP1738388A4

公开(公告)日：2009-07-08

申请号：EP05729563

申请日：2005-03-18

申请人： TEL EPION INC

发明人： SWENSON DAVID R ,  HAUTALA JOHN J ,  GWINN MATTHEW C ,  MACK MICHAEL E ,  TABAT MARTIN E

IPC分类号： H01J27/00 ,  H01J27/02 ,  H01J37/305

CPC分类号： H01J27/026 ,  H01J37/3056 ,  H01J2237/0812 ,  H01J2237/188 ,  H01J2237/3151

摘要： Apparatus and methods for improving processing of workpieces with gas-cluster ion beams and modifying the gas-cluster ion energy distribution in the GCIB. In a reduced-pressure environment, generating an energetic gas-cluster ion beam and subjecting the beam to increased pressure region.

公开(公告)号：EP1787321A4

公开(公告)日：2008-12-03

申请号：EP05728275

申请日：2005-03-11

申请人： TEL EPION INC

发明人： SKINNER WESLEY J ,  HAUTALA JOHN J ,  BORLAND JOHN O

IPC分类号： H01L21/425

CPC分类号： H01L21/223 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/0812 ,  H01L21/265 ,  H01L21/26513 ,  H01L21/26566 ,  H01L21/324

摘要： Method of forming one or more doped regions (310) in a semiconductor substrate (302) and semiconductor junctions (304) for thereby, using gas cluster ion beams (306).