公开(公告)号：EP3363038A1

公开(公告)日：2018-08-22

申请号：EP16855887.2

申请日：2016-07-22

申请人： Exogenesis Corporation

发明人： KIRKPATRICK, Sean, R. ,  SVRLUGA, Richard, C.

IPC分类号： H01J37/08 ,  H01L21/00 ,  H01L21/02 ,  H01L23/00

CPC分类号： H01L21/32134 ,  C03C15/00 ,  C03C15/025 ,  H01J2237/061 ,  H01J2237/0812 ,  H01L21/02115 ,  H01L21/02167 ,  H01L21/02227 ,  H01L21/02238 ,  H01L21/02252 ,  H01L21/02274 ,  H01L21/02326 ,  H01L21/0234 ,  H01L21/26566 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/3086 ,  H01L21/3105 ,  H01L21/31105 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/321

摘要： A method for shallow etching a substrate surface forms a shallow modified substrate layer overlying unmodified substrate using an accelerated neutral beam and etches the modified layer, stopping at the unmodified substrate beneath, producing controlled shallow etched substrate surfaces.

公开(公告)号：EP3189540A1

公开(公告)日：2017-07-12

申请号：EP15837426.4

申请日：2015-09-01

申请人： Tel Epion Inc.

发明人： GRAF, Michael ,  RUSSELL, Noel ,  GWINN, Matthew C. ,  LEITH, Allen J.

IPC分类号： H01L21/205 ,  H01L21/265

CPC分类号： H01L21/3065 ,  H01J27/026 ,  H01J37/317 ,  H01J2237/006 ,  H01J2237/0812 ,  H01J2237/16 ,  H01J2237/31732 ,  H01J2237/3174 ,  H01L21/31116 ,  H01L21/32136

摘要： A beam processing system and method of operating are described. In particular, the beam processing system includes a beam source having a nozzle assembly that is configured to introduce a primary gas through the nozzle assembly to a vacuum vessel in order to produce a gaseous beam, such as a gas cluster beam, and optionally, an ionizer positioned downstream from the nozzle assembly, and configured to ionize the gaseous beam to produce an ionized gaseous beam. The beam processing system further includes a process chamber within which a substrate is positioned for treatment by the gaseous beam, and a secondary gas source, wherein the secondary gas source includes a secondary gas supply system that delivers a secondary gas, and a secondary gas controller that operatively controls the flow of the secondary gas injected into the beam processing system downstream of the nozzle assembly.

摘要翻译： 描述了光束处理系统和操作方法。 具体而言，束处理系统包括具有喷嘴组件的束源，该喷嘴组件被配置为将通过喷嘴组件的主气体引入真空容器以产生气体束如气体束束，并且可选地包括 电离器，其定位在喷嘴组件的下游，并且被配置为使气体束电离以产生电离的气体束。 该束处理系统还包括：处理室，在该处理室中，衬底被定位以用于由气体束处理;以及第二气体源，其中第二气体源包括输送第二气体的第二气体供给系统和第二气体控制器 其可操作地控制喷射到喷嘴组件下游的射束处理系统中的二次气体的流动。

公开(公告)号：EP3178105A2

公开(公告)日：2017-06-14

申请号：EP15829520.4

申请日：2015-07-31

申请人： Tel Epion Inc.

发明人： GWINN, Matthew, C. ,  FREYTSIS, Avrum ,  BECKER, Robert, K.

IPC分类号： H01J37/08 ,  H01J37/317

CPC分类号： H01J37/08 ,  H01J37/305 ,  H01J2237/006 ,  H01J2237/0206 ,  H01J2237/061 ,  H01J2237/0812 ,  H01J2237/0822 ,  H01J2237/3151

摘要： A nozzle assembly used for performing gas cluster ion beam (GCIB) etch processing of various materials is described. In particular, the nozzle assembly includes two or more conical nozzles that are aligned such that they are both used to generate the same GCIB. The first conical nozzle may include the throat that initially forms the GCIB and the second nozzle may form a larger conical cavity that may be appended to the first conical nozzle. A transition region may be disposed between the two conical nozzles that may substantially cylindrical and slightly larger than the largest diameter of the first conical nozzle.

摘要翻译： 描述了用于执行各种材料的气体簇离子束（GCIB）蚀刻处理的喷嘴组件。 特别地，喷嘴组件包括两个或更多个对齐的锥形喷嘴，使得它们都用于产生相同的GCIB。 第一锥形喷嘴可以包括最初形成GCIB的喉部，并且第二喷嘴可以形成可以附加到第一锥形喷嘴的较大的锥形腔。 过渡区域可以设置在两个圆锥形喷嘴之间，所述两个圆锥形喷嘴可以基本上圆柱形并且略大于第一锥形喷嘴的最大直径。

公开(公告)号：EP1918963B1

公开(公告)日：2014-04-23

申请号：EP07119687.7

申请日：2007-10-31

申请人： FEI COMPANY

发明人： Chandler, Clive ,  Smith, Noel

IPC分类号： H01J37/08 ,  H01J37/305 ,  H01J37/317

CPC分类号： H01L21/306 ,  H01J37/3056 ,  H01J37/3178 ,  H01J2237/006 ,  H01J2237/0812 ,  H01J2237/0815 ,  H01J2237/3142 ,  H01J2237/31732 ,  H01J2237/3174 ,  H01J2237/31742 ,  H01J2237/31744 ,  H01L21/67069

公开(公告)号：EP2426693A3

公开(公告)日：2013-01-16

申请号：EP11009107.1

申请日：2000-12-13

申请人： Semequip, Inc.

发明人： Horsky, Thomas N. ,  Williams, John N.

IPC分类号： H01J37/08 ,  H01J3/02 ,  H01J37/317 ,  C23C14/48 ,  H01J27/20 ,  H01L21/265

CPC分类号： H01J37/3171 ,  C23C14/48 ,  H01J27/205 ,  H01J37/08 ,  H01J2237/047 ,  H01J2237/049 ,  H01J2237/063 ,  H01J2237/0812 ,  H01J2237/0815 ,  H01J2237/082 ,  H01J2237/083 ,  H01J2237/0835 ,  H01J2237/31701 ,  H01J2237/31703 ,  H01J2237/31705 ,  H01L21/26513 ,  H01L21/2658 ,  H01L21/823814

摘要： In an ion source (1) for use with an ion implant device comprising:
an ionization chamber (5) defined by a plurality of side walls defining an ionization volume (16), one (13) of said side walls including an ion extraction aperture (37) for enabling an ion beam to be extracted from said ionization chamber (16) along a predetermined axis defining an ion beam axis; and a gas source (2) in fluid communication with said ionization chamber (16); an electron source (12) for producing an electron beam for ionizing the gas in said ionization chamber (16); said electron source (12) has an emitter (33) external to the ionization volume (16) and one (13) of said sidewalls (13) includes an electron entrance aperture , said emitter (33) configured relative to said aperture to cause an electron beam (32) to be directed across the ionization chamber (16) and ionize said gas by direct electron impact ionization by energetic electrons

公开(公告)号：EP2323699A4

公开(公告)日：2011-12-07

申请号：EP09771141

申请日：2009-06-26

申请人： EXOGENESIS CORP

发明人： KIRKPATRICK SEAN R ,  SVRLUGA RICHARD C

IPC分类号： A61L2/08

CPC分类号： A61L2/087 ,  A61L2/20 ,  A61L12/10 ,  A61L2202/24 ,  H01J2237/0812

公开(公告)号：EP2079103A4

公开(公告)日：2010-05-26

申请号：EP07831192

申请日：2007-10-30

申请人： JAPAN AVIATION ELECTRON

发明人： SUZUKI AKIKO ,  SATO AKINOBU ,  BOURELLE EMMANUEL ,  MATSUO JIRO ,  SEKI TOSHIO

IPC分类号： H01L21/302 ,  H01L21/033 ,  H01L21/308

CPC分类号： H01L21/3083 ,  H01J2237/0812 ,  H01L21/3065

公开(公告)号：EP2098490A1

公开(公告)日：2009-09-09

申请号：EP07832417.5

申请日：2007-11-22

申请人： Asahi Glass Company, Limited

发明人： OTSUKA, Koji ,  OKAMURA, Kenji

IPC分类号： C03C15/00 ,  G01B9/02 ,  G01B11/24 ,  G01B11/30 ,  G03F1/14 ,  G03F7/20 ,  H01L21/027

CPC分类号： G01B9/02065 ,  C03C15/02 ,  C03C19/00 ,  C03C23/006 ,  C03C2204/08 ,  G01B9/02057 ,  G01B9/0209 ,  G01B11/30 ,  G03F1/60 ,  H01J2237/0812 ,  Y10T428/24355

摘要： The invention is to provide a method in which waviness generated on a glass substrate surface during pre-polishing is removed, thereby finishing the glass substrate so as to have a surface excellent in flatness. The invention relates to a method for finishing a pre-polished glass substrate surface using any one of processing methods selected from the group consisting of ion beam etching, gas cluster ion beam etching and plasma etching, the glass substrate being made of quartz glass that contains a dopant and comprises SiO 2 as a main component, and the method for finishing a pre-polished glass substrate surface including: a step of measuring flatness of the glass substrate surface using a shape measurement unit that comprises: a low-coherent light source whose outgoing light flux has a coherence length shorter than twice an optical distance between front and back surfaces of the glass substrate; a path match route part that divides the outgoing light flux from the low-coherent light source into two light fluxes, causes one of the two light fluxes to make a detour by a given optical path length relative to the other light flux, and then recombines the light fluxes into a single light flux and outputs it; and an interference optical system that acquires an interference fringe which carries wave surface information of the glass substrate surface by radiating an outgoing light flux from the low-coherent light source onto a reference surface and the glass substrate surface held on a measurement optical axis and making lights returning from the reference surface and the glass substrate surface interfere with each other, and a step of measuring a concentration distribution of the dopant contained in the glass substrate, wherein processing conditions of the glass substrate surface are set up for each site of the glass substrate based on the results obtained from the step of measuring flatness of the glass substrate and the step of measuring a concentration distribution of the dopant contained in the glass substrate, and the finishing is carried out while keeping an angle formed by a normal line of the glass substrate and an incident beam onto the glass substrate surface at from 30 to 89°.

摘要翻译： 本发明提供一种在预抛光期间在玻璃基板表面产生的波纹被去除的方法，从而使玻璃基板整理成具有优异的平面度的表面。 本发明涉及使用选自离子束蚀刻，气体簇离子束蚀刻和等离子体蚀刻的任何一种处理方法来完成预抛光的玻璃基板表面的方法，该玻璃基板由石英玻璃制成，该石英玻璃包含 掺杂剂并且包括SiO 2作为主要成分，以及用于完成预抛光的玻璃基板表面的方法，包括：使用形状测量单元测量玻璃基板表面的平坦度的步骤，该形状测量单元包括：低相干光源， 出射光通量的相干长度短于玻璃基板的前表面和后表面之间的光学距离的两倍; 将来自低相干光源的出射光通量分成两个光束的路径匹配路线部分，使得两个光束中的一个相对于另一光束通过给定光路长度绕行，然后重新组合 光通入单个光通量并输出; 以及干涉光学系统，其通过将来自所述低相干光源的出射光束照射到参考面上并且将所述玻璃基板表面保持在测量光轴上而获取携带所述玻璃基板表面的波面信息的干涉条纹， 从基准面返回的光和玻璃基板表面相互干涉，测定包含在玻璃基板中的掺杂剂的浓度分布的步骤，对玻璃基板的各个部位设置玻璃基板表面的处理条件 基于从测量玻璃基板的平坦度的步骤获得的结果和测量玻璃基板中所含的掺杂剂的浓度分布的步骤，并且在保持由玻璃基板的法线形成的角度的同时进行精加工 玻璃基板和入射光束在30至89°的玻璃基板表面上。

公开(公告)号：EP2079103A1

公开(公告)日：2009-07-15

申请号：EP07831192.5

申请日：2007-10-30

申请人： Japan Aviation Electronics Industry, Limited

发明人： SUZUKI, Akiko ,  SATO, Akinobu ,  BOURELLE, Emmanuel ,  MATSUO, Jiro ,  SEKI, Toshio

IPC分类号： H01L21/302

CPC分类号： H01L21/3083 ,  H01J2237/0812 ,  H01L21/3065

摘要： A solid surface is processed while corner portions of a relief structure are protected from deformation. A method of processing a solid surface with a gas cluster ion beam includes a cluster protection layer formation step of forming, on the solid surface, a relief structure having protrusions with a cluster protection layer formed to cover an upper part thereof and recesses without the cluster protection layer; an irradiation step of emitting a gas cluster ion beam onto the solid surface having the relief structure formed in the cluster protection layer formation step; and a removal step of removing the cluster protection layer. A thickness T of the cluster protection layer satisfies T > nY + b 2 ⁢ Y 2 ⁢ n - n ⁢ Y 2 ⁢ b 4 - 16 ⁢ a 2 1 2 2 1 2 ,
where n is a dose of the gas cluster ion beam, and Y is an etching efficiency of the cluster protection layer, expressed as an etching volume per cluster ( a and b are constants).

摘要翻译： 处理浮雕结构的角部以防止变形的实心表面。 利用气体簇离子束处理固体表面的方法包括：簇保护层形成步骤，在固体表面上形成具有突起的浮雕结构，所述突起具有形成为覆盖其上部的簇保护层和不具有簇的凹部 保护层; 在所述簇保护层形成工序中形成有所述浮雕结构的固体表面上的气体簇离子束的照射工序; 以及去除簇保护层的去除步骤。 簇保护层的厚度T满足T> nY + b 2 ¢Y 2 ¢n - n ¢Y 2 ¢b 4 - 16 ¢a 2 1 2 2 1 2，其中n是 气体簇离子束，Y是簇保护层的蚀刻效率，表示为每簇的蚀刻体积（a和b是常数）。

公开(公告)号：EP1807859A2

公开(公告)日：2007-07-18

申请号：EP05820956.0

申请日：2005-10-25

申请人： TEL Epion Inc.

发明人： MACK, Michael, E.

IPC分类号： H01J27/02 ,  H01J27/00 ,  H01J49/00

CPC分类号： H01J27/08 ,  H01J27/026 ,  H01J37/08 ,  H01J37/3053 ,  H01J2237/0041 ,  H01J2237/0812

摘要： An ionizer (640, Fig.10) for forming a gas-cluster ion beam is disclosed (Fig. 10) including inlet and outlet ends partially defining an ionization region traversed by a gas-cluster jet and one or more plasma electron source(s) (642) for providing electrons (644) to the ionizing region for ionizing at least a portion of the gas-clusters to form a gas-cluster ion beam. One or more sets of substantially linear rod electrodes (452) may be disposed substantially parallel to and in one or more corresponding partial, substantially cylindrical pattern(s) about die gas-cluster jet axis, wherein some sets are arranged in substantially concentric patterns with differing radii (458, 464). In certain embodiments, the ionizer includes one or more substantially linear thermionic filaments disposed substantially parallel to the gas-cluster jet axis, heating means, electrical biasing means to judiciously bias sets of the linear rod electrodes with respect to the thermionic filaments to achieve electron repulsion.