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公开(公告)号：EP0813239A1
公开(公告)日：1997-12-17
申请号：EP97102734.7
申请日：1997-02-20
发明人： Chatterjee, Amitava , Houston, Theodore W. , Chen, Ih-Chin , Esquirel, Agerico L. , Nag, Somnath , Ali, Iqbal , Joyner, Keith A. , Hu, Yin , McKee, Jeffrey A. , McAnally, Peter S.
IPC分类号： H01L21/762 , H01L21/3105
CPC分类号： H01L21/76229 , H01L21/31053 , Y10S148/05
摘要： A technique of producing a semiconductor device or integrated circuit produces a planarized refill layer which has a more uniform thickness after polishing, such as by chemical-mechanical polishing (CMP). Dummy active areas are inserted between active areas in that portion of the substrate which would normally be occupied by a field oxide in order to reduce to "dishing" that occurs during CMP in these areas. The dummy active areas can take the shape of a large block, a partially or completely formed ring structure or a plurality of pillars the area density of which can be adjusted to match the area density of the active areas in that region of the substrate. The design rule for the pillars can be such that no pillars are placed where polycrystalline silicon lines or first level metallization lines are to be placed in order to avoid parasitic capacitances.
摘要翻译： 生产半导体器件或集成电路的技术产生平坦化的填充层，其在抛光之后具有更均匀的厚度，例如通过化学机械抛光（CMP）。 虚拟有效区域插入衬底的通常会被场氧化物占据的部分中的有源区域之间，以便减少在CMP期间在这些区域发生的“凹陷”。 伪有效区域可以采取大块的形状，部分或完全形成的环形结构或多个支柱，其面积密度可被调节以匹配衬底的该区域中的有源区域的面积密度。 柱子的设计规则可以是这样的，即在多晶硅线或第一级金属化线要放置的位置不放置柱子以避免寄生电容。
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2.发明公开
公开(公告)号：EP0809281A2
公开(公告)日：1997-11-26
申请号：EP97303483.8
申请日：1997-05-20
CPC分类号： H01L21/76897 , H01L21/28 , H01L21/31144 , H01L21/76802
摘要： A contact (26) to a substrate (12) is formed using a first stopping layer (14), an insulating layer (16), and a second stopping layer (18). The second stopping layer (18) promotes a more accurate and controlled removal of the first stopping layer (14). A self-aligned contact (122) may be formed in a similar manner using a first stopping layer (110), an insulating layer (112), and a second stopping layer (114).
摘要翻译： 使用第一阻挡层（14），绝缘层（16）和第二阻挡层（18）形成到基板（12）的接触件（26）。 第二停止层（18）促进第一停止层（14）的更精确和可控的去除。 可以使用第一阻挡层（110），绝缘层（112）和第二阻挡层（114）以类似的方式形成自对准接触件（122）。
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公开(公告)号：EP0809281A3
公开(公告)日：1997-12-10
申请号：EP97303483.8
申请日：1997-05-20
CPC分类号： H01L21/76897 , H01L21/28 , H01L21/31144 , H01L21/76802
摘要： A contact (26) to a substrate (12) is formed using a first stopping layer (14), an insulating layer (16), and a second stopping layer (18). The second stopping layer (18) promotes a more accurate and controlled removal of the first stopping layer (14). A self-aligned contact (122) may be formed in a similar manner using a first stopping layer (110), an insulating layer (112), and a second stopping layer (114).
摘要翻译： 使用第一停止层（14），绝缘层（16）和第二停止层（18）形成与基板（12）的接触（26）。 第二停止层（18）促进第一停止层（14）的更准确和受控的移除。 可以使用第一停止层（110），绝缘层（112）和第二停止层（114）以类似的方式形成自对准接触件（122）。
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公开(公告)号：EP0849785A3
公开(公告)日：1998-12-30
申请号：EP97310455.7
申请日：1997-12-22
IPC分类号： H01L21/60
CPC分类号： H01L21/76897 , H01L23/3171 , H01L23/485 , H01L2924/0002 , H01L2924/12044 , H01L2924/19041 , Y10S257/90 , H01L2924/00
摘要： A self-aligned contact (122) to a substrate (12) of a semiconductor device (100) is formed using a stopping layer (110) overlying the substrate (12). The stopping layer (110) comprising a material selected from the group consisting of silicon-rich nitride, silicon-rich oxide, carbon-rich nitride, silicon carbide, boron nitride, organic spin-on-glass, graphite, diamond, carbon-rich oxide, nitrided oxide, and organic polymer. The stopping layer (110) promotes better semiconductor device (100) performance by contributing to greater selectivity with respect to an etch process used to remove an insulating layer (112) formed overlying the stopping layer (110).
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公开(公告)号：EP0809281B1
公开(公告)日：2003-05-02
申请号：EP97303483.8
申请日：1997-05-20
IPC分类号： H01L21/60 , H01L21/768
CPC分类号： H01L21/76897 , H01L21/28 , H01L21/31144 , H01L21/76802
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公开(公告)号：EP0849785A2
公开(公告)日：1998-06-24
申请号：EP97310455.7
申请日：1997-12-22
IPC分类号： H01L21/60
CPC分类号： H01L21/76897 , H01L23/3171 , H01L23/485 , H01L2924/0002 , H01L2924/12044 , H01L2924/19041 , Y10S257/90 , H01L2924/00
摘要： A self-aligned contact (122) to a substrate (12) of a semiconductor device (100) is formed using a stopping layer (110) overlying the substrate (12). The stopping layer (110) comprising a material selected from the group consisting of silicon-rich nitride, silicon-rich oxide, carbon-rich nitride, silicon carbide, boron nitride, organic spin-on-glass, graphite, diamond, carbon-rich oxide, nitrided oxide, and organic polymer. The stopping layer (110) promotes better semiconductor device (100) performance by contributing to greater selectivity with respect to an etch process used to remove an insulating layer (112) formed overlying the stopping layer (110).
摘要翻译： 使用覆盖衬底（12）的停止层（110）形成到半导体器件（100）的衬底（12）的自对准接触（122）。 所述阻挡层（110）包括选自富硅氮化物，富硅氧化物，富碳氮化物，碳化硅，氮化硼，有机旋涂玻璃，石墨，金刚石，富含碳的材料 氧化物，氮化氧化物和有机聚合物。 相对于用于去除形成在停止层（110）上方的绝缘层（112）的蚀刻工艺，停止层（110）促进更好的选择性，从而促进更好的半导体器件（100）性能。
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