公开(公告)号：EP1758151A2

公开(公告)日：2007-02-28

申请号：EP06017631.0

申请日：2006-08-24

申请人： TOKYO ELECTRON LIMITED ,  OCTEC INC. ,  IBIDEN CO., LTD.

发明人： Yamanishi, Yoshiki ,  Harada, Muneo ,  Kitano, Takahiro ,  Kawaguchi, Tatsuzo ,  Hirota, Yoshihiro ,  Yamada, Kinji ,  Shinoda, Tomotaka ,  Okumura, Katsuya ,  Kawano, Shuichi

IPC分类号： H01L21/02 ,  H01L21/768

CPC分类号： H01L23/50 ,  H01G4/228 ,  H01G4/33 ,  H01L23/481 ,  H01L24/81 ,  H01L2224/81801 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01056 ,  H01L2924/01072 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/30105 ,  H05K1/162 ,  H05K3/002 ,  H05K2201/09509 ,  H05K2201/096 ,  H05K2201/10378

摘要： A capacitor having a high quality and a manufacturing method of the same are provided.
A capacitor (10) has a lower electrode (13a) formed on an oxide film (12), a dielectric layer (14) formed on the lower electrode (13a), an upper electrode (15a,15c) formed so as to face the lower electrode (13a) with the dielectric layer (14) between, and an upper electrode (15b,15d) formed so as to cover the upper electrode (15c), an opening portion (62g) of the upper electrode (15c) and an opening portion (61g) of the dielectric layer (14). By forming the upper electrode (15a,15c) on the dielectric layer (14), it is possible to pattern the dielectric layer (14) by using the upper electrode (15a,15c) as a mask, and provide a capacitor (10) having a high-quality dielectric layer (14) by preventing impurity diffusion into the dielectric layer (14). By forming the upper electrode (15b,15d) on the dielectric layer (14), it is possible to prevent the dielectric layer (14) from being exposed to etching liquid, liquid developer, etc.

摘要翻译： 提供了具有高质量的电容器及其制造方法。 电容器（10）具有形成在氧化膜（12）上的下电极（13a），形成在下电极（13a）上的电介质层（14），形成为面对 具有电介质层（14）的下电极（13a）与形成为覆盖上电极（15c）的上电极（15b，15d）之间，上电极（15c）的开口部分（62g）和 电介质层（14）的开口部（61g）。 通过在电介质层（14）上形成上部电极（15a，15c），可以通过使用上部电极（15a，15c）作为掩模对电介质层（14）进行图案化，并提供电容器（10） 通过防止杂质扩散到电介质层（14）中而具有高质量的电介质层（14）。 通过在电介质层（14）上形成上部电极（15b，15d），可以防止电介质层（14）暴露于蚀刻液体，液体显影剂等

公开(公告)号：EP1758152A3

公开(公告)日：2007-12-05

申请号：EP06017632.8

申请日：2006-08-24

申请人： TOKYO ELECTRON LIMITED ,  OCTEC INC. ,  IBIDEN CO., LTD.

发明人： Yamanishi, Yoshiki ,  Harada, Muneo ,  Kitano, Takahiro ,  Kawaguchi, Tatsuzo ,  Hirota, Yoshihiro ,  Matsuda, Kenji ,  Yamada, Kinji ,  Shinoda, Tomotaka ,  Wang, Daohai ,  Okumura, Katsuya

IPC分类号： H01L21/02 ,  H01G4/12

CPC分类号： H01L28/55

摘要： Atmosphere in processing apparatus (100) is adjusted to, for example, oxygen atmosphere, by gas supply source (112) and the like. Interior of thermal processing apparatus (101) is set to oxygen atmosphere and raised to predetermined temperature. A wafer boat (161) containing wafer W having dielectric precursor layer formed is loaded into thermal processing apparatus (101) at speed at which no defects are produced in wafer W. Thereafter, reaction tube of thermal processing apparatus (101) has its internal temperature raised to baking temperature, to perform baking for predetermined time. The wafer W is cooled to predetermined temperature in thermal processing apparatus (101) and then to room temperature in processing apparatus (100), and carried out from processing apparatus (100). Before dielectric precursor layer is baked, it is maintained for predetermined time at temperature higher than temperature at which solvent in dielectric precursor layer is volatilized and lower than temperature at which dielectric precursor layer starts crystallization to vaporize residual solvent.

摘要翻译： 处理装置（100）内的气氛例如通过气体供给源（112）等调整为氧气氛。 热处理设备（101）的内部设置为氧气氛并升高到预定温度。 然后，将形成有电介质前体层的晶片W的晶片舟（161）以晶片W中没有产生缺陷的速度装载到热处理装置（101）中。然后，热处理装置（101）的反应管的内部温度 升高至烘烤温度，进行预定时间的烘烤。 晶片W在热处理装置（101）中冷却至规定温度后，在处理装置（100）中冷却至室温，从处理装置（100）运出。 在电介质前体层被烘烤之前，在高于电介质前体层中的溶剂挥发温度的温度下维持预定的时间，并低于电介质前体层开始结晶以蒸发残留溶剂的温度。

公开(公告)号：EP1758151A3

公开(公告)日：2008-04-23

申请号：EP06017631.0

申请日：2006-08-24

申请人： TOKYO ELECTRON LIMITED ,  OCTEC INC. ,  IBIDEN CO., LTD.

发明人： Yamanishi, Yoshiki ,  Harada, Muneo ,  Kitano, Takahiro ,  Kawaguchi, Tatsuzo ,  Hirota, Yoshihiro ,  Yamada, Kinji ,  Shinoda, Tomotaka ,  Okumura, Katsuya ,  Kawano, Shuichi

IPC分类号： H01L21/02 ,  H01L21/60 ,  H01L23/50 ,  H01G4/228 ,  H01G4/33 ,  H05K1/16 ,  H01L23/522 ,  H01L21/768 ,  H05K3/00

CPC分类号： H01L23/50 ,  H01G4/228 ,  H01G4/33 ,  H01L23/481 ,  H01L24/81 ,  H01L2224/81801 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01056 ,  H01L2924/01072 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/30105 ,  H05K1/162 ,  H05K3/002 ,  H05K2201/09509 ,  H05K2201/096 ,  H05K2201/10378

摘要： A capacitor having a high quality and a manufacturing method of the same are provided.
A capacitor (10) has a lower electrode (13a) formed on an oxide film (12), a dielectric layer (14) formed on the lower electrode (13a), an upper electrode (15a,15c) formed so as to face the lower electrode (13a) with the dielectric layer (14) between, and an upper electrode (15b,15d) formed so as to cover the upper electrode (15c), an opening portion (62g) of the upper electrode (15c) and an opening portion (61g) of the dielectric layer (14). By forming the upper electrode (15a,15c) on the dielectric layer (14), it is possible to pattern the dielectric layer (14) by using the upper electrode (15a,15c) as a mask, and provide a capacitor (10) having a high-quality dielectric layer (14) by preventing impurity diffusion into the dielectric layer (14). By forming the upper electrode (15b,15d) on the dielectric layer (14), it is possible to prevent the dielectric layer (14) from being exposed to etching liquid, liquid developer, etc.

公开(公告)号：EP1758153A2

公开(公告)日：2007-02-28

申请号：EP06119385.0

申请日：2006-08-23

申请人： TOKYO ELECTRON LIMITED ,  IBIDEN CO., LTD. ,  OCTEC INC.

发明人： Shinoda, Tomotaka ,  Yamada, Kinji ,  Kitano, Takahiro Tokyo Electron Limited ,  Yamanishi, Yoshiki Tokyo Electron Limited ,  Harada, Muneo Tokyo Electron Limited ,  Kawaguchi, Tatsuzo Tokyo Electron Limited ,  Hirota, Yoshihiro Tokyo Electron Limited ,  Okumura, Katsuya ,  Kawano, Shuichi

IPC分类号： H01L21/02

CPC分类号： H01L28/65 ,  H01L27/11507 ,  H01L28/55 ,  Y10T29/435

摘要： A dielectric film capacitor (20) includes a lower electrode (22) having an opening and formed of a material including platinum, a dielectric film (24) provided over the lower electrode and including an oxide having an ABOx crystal structure, and an upper electrode (26) provided over the dielectric film. The planar area of the lower electrode is 50% or more of the area of a formation region of the dielectric film. A dielectric film capacitor includes a lower electrode (22) formed of a material including platinum and having a thickness of 10 to 100 nm, a dielectric film (24) provided over the lower electrode and including an oxide having an ABOx crystal structure, and an upper electrode (26) provided over the dielectric film.

摘要翻译： 电介质膜电容器（20）包括具有开口并由铂构成的材料的下电极（22），设置在下电极上并包括具有ABOx晶体结构的氧化物的电介质膜（24）和上电极 （26）设置在电介质膜上。 下部电极的平面面积为电介质膜的形成区域的面积的50％以上。 电介质膜电容器包括由包括铂的材料形成的厚度为10至100nm的下电极（22），设置在下电极上并包括具有ABOx晶体结构的氧化物的电介质膜（24），以及 设置在电介质膜上的上电极（26）。

公开(公告)号：EP1758152A2

公开(公告)日：2007-02-28

申请号：EP06017632.8

申请日：2006-08-24

申请人： TOKYO ELECTRON LIMITED ,  OCTEC INC. ,  JSR Corporation

发明人： Yamanishi, Yoshiki ,  Harada, Muneo ,  Kitano, Takahiro ,  Kawaguchi, Tatsuzo ,  Hirota, Yoshihiro ,  Matsuda, Kenji ,  Yamada, Kinji ,  Shinoda, Tomotaka ,  Wang, Daohai ,  Okumura, Katsuya

IPC分类号： H01L21/02 ,  H01G4/12

CPC分类号： H01L28/55

摘要： Atmosphere in processing apparatus (100) is adjusted to, for example, oxygen atmosphere, by gas supply source (112) and the like. Interior of thermal processing apparatus (101) is set to oxygen atmosphere and raised to predetermined temperature. A wafer boat (161) containing wafer W having dielectric precursor layer formed is loaded into thermal processing apparatus (101) at speed at which no defects are produced in wafer W. Thereafter, reaction tube of thermal processing apparatus (101) has its internal temperature raised to baking temperature, to perform baking for predetermined time. The wafer W is cooled to predetermined temperature in thermal processing apparatus (101) and then to room temperature in processing apparatus (100), and carried out from processing apparatus (100). Before dielectric precursor layer is baked, it is maintained for predetermined time at temperature higher than temperature at which solvent in dielectric precursor layer is volatilized and lower than temperature at which dielectric precursor layer starts crystallization to vaporize residual solvent.

摘要翻译： 处理装置（100）中的气氛通过气体供给源（112）等调节为例如氧气氛。 将热处理装置（101）的内部设定为氧气氛并升温至规定温度。 包含形成有电介质前体层的晶片W的晶片舟皿161以晶片W中没有产生缺陷的速度被装载到热处理装置（101）中。此后，热处理装置（101）的反应管的内部温度 升温至烘烤温度，进行烘烤预定时间。 将晶片W在热处理装置（101）中冷却至规定温度，然后在处理装置（100）中冷却至室温，并从处理装置（100）进行。 在电介质前体层被烘烤之前，将其保持在高于电介质前体层中的溶剂挥发并且低于电介质前体层开始结晶以蒸发残余溶剂的温度的温度下的预定时间。