公开(公告)号：EP1655771A4

公开(公告)日：2008-02-27

申请号：EP04747870

申请日：2004-07-23

申请人： TOKYO ELECTRON LTD

发明人： KAWAMURA KOHEI ,  KOBAYASHI YASUO ,  NISHIZAWA KENICHI ,  TERAI YASUHIRO ,  ASANO AKIRA

IPC分类号： H01L21/314 ,  C23C16/26 ,  C23C16/56 ,  H01L21/205 ,  H01L21/3065 ,  H01L21/31 ,  H01L21/312 ,  H01L21/316 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/52 ,  H01L23/522

CPC分类号： H01L21/0212 ,  C23C16/26 ,  C23C16/56 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/3127

摘要： A method for forming a film, characterized in that it comprises a step of forming an F-added carbon film by the use of a raw material gas containing C and F, a step of modifying the above F-added carbon film by a radical, and a step of modifying the above F-added carbon film, wherein the raw material gas has a ratio (F/C) of the number of F atoms to the number of C atoms contained therein of more than 1 and less than 2.

公开(公告)号：EP1610369A4

公开(公告)日：2007-03-07

申请号：EP04722947

申请日：2004-03-24

申请人： TOKYO ELECTRON LTD

发明人： KOBAYASHI YASUO ,  KAWAMURA KOHEI ,  ASANO AKIRA ,  TERAI YASUHIRO ,  NISHIZAWA KENICHI

IPC分类号： H01L21/31 ,  C23C16/511 ,  H01J37/32 ,  H01L21/312 ,  H01L21/314

CPC分类号： H01J37/32192 ,  C23C16/511 ,  H01J37/3244 ,  H01L21/0212 ,  H01L21/02274 ,  H01L21/3127

摘要： A plasma film-forming method and apparatus in which an upper opening of a vacuum chamber is closed with a dielectric and a planar antenna member is provided on the top of the dielectric. A coaxial waveguide is provided on the top of the planar antenna member. Microwave generator means is connected to the coaxial waveguide. A multitude of slits having a length equal to, e.g., half the wavelength of the microwave are provided concentrically in the planar antenna member. For example, a circularly polarized microwave is emitted through these slits into a process atmosphere to produce a plasma from a material gas. The electron temperature the plasma defined by mean-square velocity is 3 eV or less, and the electron density is 5×1011/cm3 or more. Thus, a fluorine-added carbon film is formed. It is preferable that the process pressure is 19.95 Pa or less.

公开(公告)号：EP2105953A4

公开(公告)日：2011-12-14

申请号：EP07832893

申请日：2007-11-30

申请人： TOKYO ELECTRON LTD

发明人： KIKUCHI YOSHIYUKI ,  KOBAYASHI YASUO ,  KAWAMURA KOHEI ,  NOZAWA TOSHIHISA ,  ISHIKAWA HIRAKU

IPC分类号： H01L21/314 ,  C23C16/26 ,  H01L21/31 ,  H01L21/768 ,  H01L23/522

CPC分类号： H01L23/5329 ,  C23C16/26 ,  H01L21/0276 ,  H01L21/31144 ,  H01L21/3146 ,  H01L21/76811 ,  H01L21/76834 ,  H01L21/76835 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

公开(公告)号：EP1655772A4

公开(公告)日：2007-12-26

申请号：EP04771570

申请日：2004-08-12

申请人： TOKYO ELECTRON LTD ,  ZEON CORP ,  OHMI TADAHIRO

发明人： KOBAYASHI YASUO ,  KAWAMURA KOHEI ,  OHMI TADAHIRO ,  TERANOTO AKINOBU ,  SUGIMOTO TATSUYA ,  YAMADA TOSHIRO ,  TANAKA KIMIAKI

IPC分类号： H01L21/314

CPC分类号： H01L21/3127 ,  H01L21/0212 ,  H01L21/02274 ,  H01L21/3146

摘要： A semiconductor device having an insulating film comprising a fluorine-doped carbon film having experienced a thermal history under a temperature of 420°C or less, characterized in that the fluorine-doped carbon film has a hydrogen atom content of 3 atomic % or less before the experience of the thermal history.