公开(公告)号：EP2939996A4

公开(公告)日：2016-08-10

申请号：EP13867230

申请日：2013-12-27

申请人： TOSOH CORP ,  SAGAMI CHEMICAL RES INST

发明人： ASANO SACHIO ,  KINOSHITA TOMOYUKI ,  HARA YASUSHI ,  HARA DAIJI ,  TANAKA RYOJI ,  TADA KEN-ICHI

IPC分类号： C07C31/28 ,  C07C29/68 ,  C07C33/26 ,  C07F9/00 ,  H01L21/28 ,  H01L21/288 ,  H01L21/316

CPC分类号： C07F9/005 ,  C07C29/68 ,  C07C31/28 ,  C07C33/26 ,  C07F9/00 ,  H01L21/02118 ,  H01L21/02175 ,  H01L21/02183 ,  H01L21/02194 ,  H01L21/02282 ,  H01L21/02318

摘要： Provided is a compound useful for the manufacture of a Group 5 metal oxide film. The compound is a Group 5 metal oxo-alkoxo complex represented by general formula (A). A material solution for film formation purposes, which comprises the compound and an organic solvent, is prepared. A Group 5 metal oxide film can be manufactured using the material solution for film formation purposes. M±(µ4-O)²(µ3-O)³(µ-O)´(µ-ORA)µ(ORA)¶(RAOH)·X¸Y (A) (wherein M represents a niobium atom or the like; RA represents an alkyl group; X represents an alkylenedioxy group; Y represents a carboxy group or the like; ± represents an integer of 3 to 10; ² represents an integer of 0 to 1; ³ represents an integer of 0 to 8; ´ represents an integer of 2 to 9; µ represents an integer of 0 to 6; ¶ represents an integer of 6 to 16; · represents an integer of 0 to 4; ¸ represents an integer of 0 to 2; and represents an integer of 0 to 6).

公开(公告)号：EP1566835A4

公开(公告)日：2008-02-20

申请号：EP03775970

申请日：2003-11-28

申请人： TOSOH CORP

发明人： HARA DAIJI ,  YOSHIDA KEISUKE

IPC分类号： B05D7/24 ,  C07F7/18 ,  C07F7/21 ,  C23C16/40 ,  H01L21/312 ,  H01L21/316

CPC分类号： H01L21/02126 ,  B05D1/62 ,  C07F7/184 ,  C07F7/1876 ,  C07F7/21 ,  C23C16/401 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/3121 ,  H01L21/3122 ,  H01L21/31633 ,  H01L2924/0002 ,  H01L2924/00

摘要： An insulating film material from which an insulating film is formed by a chemical vapor deposition method and which is preferably used as an interlayer insulating film material for semiconductor devices is disclosed. An insulating film made from this material and a semiconductor device using such an insulating film are also disclosed. The insulating film material contains an organic silicon compound which is represented by one of the formulae (1)-(4) and composed of either an organic silane compound, wherein a silicon atom is directly bonded with a secondary hydrocarbon group and an alkenyl group or with an alkenyl group, or an organic siloxane compound, wherein a silicon atom is directly bonded with a secondary hydrocarbon group and/or an alkenyl group. With this insulating film material, an insulating film is formed through chemical vapor deposition growth of the organic silicon compound.

公开(公告)号：EP1845100A4

公开(公告)日：2010-06-02

申请号：EP06711799

申请日：2006-01-17

申请人： TOSOH CORP

发明人： HARA DAIJI ,  TAKAMORI MAYUMI

IPC分类号： C07F7/21 ,  C23C16/42 ,  H01L21/312

CPC分类号： C23C16/452 ,  B05D1/62 ,  C07F7/21 ,  C23C16/401 ,  C23C16/5096 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/3121

摘要： The present invention has the objects to provide a novel material for forming Si-containing film, especially a material containing a cyclic siloxane compound suitable to a PECVD equipment for low dielectric constant insulating film, and to provide an Si-containing film using the same, and a semiconductor device containing those films. The present invention relates to a material for forming Si-containing film, containing a cyclic siloxane compound represented by the following general formula (1) (In the formula, A represents a group containing at least one selected from the group consisting of an oxygen atom, a boron atom and a nitrogen atom, n is 1 or 2, and x is an integer of from 2 to 10.), and its use.

公开(公告)号：EP2754731A4

公开(公告)日：2015-08-19

申请号：EP12830676

申请日：2012-08-24

申请人： TOSOH CORP

发明人： HARA DAIJI ,  SHIMIZU MASATO

IPC分类号： C23C16/40 ,  H01L21/316

CPC分类号： C23C16/401 ,  C23C16/30 ,  C23C16/50 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274

摘要： The present invention relates to a film composed of a carbon-containing silicon oxide formed by CVD using, as the raw material, an organosilicon compound having a secondary hydrocarbon group directly bonded to at least one silicon atom and having an atomic ratio of 0.5 or less oxygen atom with respect to 1 silicon atom, which is used as a sealing film for a gas barrier equipment and materials, an FPD device, a semiconductor device and the like.

公开(公告)号：EP2584005A4

公开(公告)日：2015-07-29

申请号：EP11795626

申请日：2011-06-08

申请人： TOSOH CORP

发明人： HARA DAIJI ,  SHIMIZU MASATO

IPC分类号： C08L83/07 ,  C08G77/50 ,  C08K3/10 ,  C08L83/05 ,  H01L23/29 ,  H01L23/31 ,  H01L33/56

CPC分类号： C08G77/18 ,  C08G77/12 ,  C08G77/20 ,  C08L83/04 ,  C09D183/04 ,  H01L23/296 ,  H01L33/56 ,  H01L2924/0002 ,  H01L2924/12044 ,  C08L83/00 ,  H01L2924/00

摘要： To provide a material suitable for sealing an LED element or for a gas barrier layer for a resin component, and an LED device, an FPD device and a semiconductor device using it. A process for producing a polymer composition, which comprises mixing and reacting as component (A), an unsaturated group-containing siloxane compound of the following formula (1): wherein R 1 is a hydrogen atom or a C 1-20 hydrocarbon group, m is an integer of at least 3, a is an integer of from 0 to 10, and the siloxane structure is a chain or cyclic structure, as component (B), a siloxane compound having a structure of the following formula (2) wherein hydrogen is directly bonded to silicon, wherein R 2 is a C 1-20 hydrocarbon group, n is an integer of at least 3, and the siloxane structure is a chain or cyclic structure, as component (C), at least one member selected from the group consisting of organic metal compounds of Group 1, 2, 12, 13 and 14 metals of the periodic table, and as component (D), a metal catalyst of Group 8, 9 or 10 metal of the periodic table.