摘要:
A processing space is provided in a reaction container. One gas inlet port is provided at the lower end of the reaction container. A distribution plate is attached to the one gas inlet port. Another gas inlet port is provided at a lower side surface of the reaction container. Powder that is an object to be processed is stored on the distribution plate in the reaction container. The distribution plate is configured to let a gas pass and not let the powder pass. A nitrogen gas is introduced into the processing space through the distribution plate from the one gas inlet port, and a processing gas is introduced into the processing space from the other gas inlet port without passing through the distribution plate.
摘要:
A surface treatment apparatus 100 includes a diluent gas supplier 1, a fluorine gas supplier 2, a mixer 5 which mixes a diluent gas with a fluorine gas, and a reactor 6 which treats a treatment target by using a mixed gas generated by the mixer 5. A diluent gas supplied from a diluent gas supplier is heated by a heater 8, and the heated diluent gas is mixed with a fluorine gas supplied from a fluorine gas supplier, in the mixer 5. The mixed gas is supplied to the reactor 6. The gas in the reactor 6 is supplied from the reactor 6 to flow paths 219, 220, 221, and 222 by an exhauster 207. The valves 223, 224, 225, and 226 are serially opened, so that the gas in the reactor 6 is supplied to a harm removal apparatus 208 while the gas flow rate is being adjusted by the flow paths 219, 220, 221, and 222.
摘要:
A fluorine/fluoride gas generator which has an electrolyte made of mixed molten salt containing hydrogen fluoride in an electrolytic cell including an anode chamber and a cathode chamber, and generates a gas containing fluorine by electrolyzing the electrolyte, includes a raw material supply pipe for supplying an electrolysis raw material, reaching the inside of the electrolyte in the electrolytic cell, a normally-closed valve provided in the middle of the raw material supply pipe, and a bypass pipe provided with a normally-open valve, joining the raw material supply pipe on the downstream side from the normally-closed valve to a gas phase area of the electrolytic cell. Accordingly, the electrolyte is prevented from being suctioned into the raw material supply pipe in the fluorine/fluoride gas generator, and solidification of the electrolyte inside the rawmaterial supply pipe can be prevented.
摘要:
It is a task of the present invention to provide an electrolytic apparatus for producing fluorine or nitrogen trifluoride by electrolyzing a hydrogen fluoride-containing molten salt, the electrolytic apparatus being advantageous in that the electrolysis can be performed without the occurrence of the anode effect even at a high current density and without the occurrence of an anodic dissolution. In the present invention, this task has been accomplished by an electrolytic apparatus for producing fluorine or nitrogen trifluoride by electrolyzing a hydrogen fluoride-containing molten salt at an applied current density of from 1 to 1,000 A/dm 2 , the electrolytic apparatus using a conductive diamond-coated electrode as an anode.
摘要:
This invention provides an electrolytic apparatus for producing fluorine or nitrogen trifluoride by electrolyzing a molten salt containing hydrogen fluoride, which electrolytic apparatus does not cause any anode effect even at high current density and can be operated without anodic dissolution. The electrolytic apparatus is an apparatus for producing fluorine or nitrogen trifluoride by electrolyzing a hydrogen fluoride-containing molten salt at an applied current density of 1 to 1,000 A/dm2 and is characterized in that an electrode covered with an electroconductive diamond is used as an anode.
摘要:
Fluorine gas generators are connected with semiconductor manufacturing apparatuses 3a to 3e through a gas supplying system 2 including a storage tank 12 that can store a predetermined quantity of fluorine gas generated in the on-site fluorine gas generators 1a to 1e. When one or more of the on-site fluorine gas generators 1a to 1e are stopped, fluorine gas is supplied to the semiconductor manufacturing apparatuses 3a to 3e from the storage tank 12 storing a predetermined quantity of fluorine gas, so as to keep the operations of the semiconductor manufacturing apparatuses 3a to 3e. Thereby obtained is a semiconductor manufacturing plant in which fluorine gas generated in the fluorine gas generators can be safely and stably supplied to the semiconductor manufacturing apparatuses, and the cost performance is superior.