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公开(公告)号:EP2538212A1
公开(公告)日:2012-12-26
申请号:EP12169531.6
申请日:2007-08-14
申请人: Tokyo Electron Limited , Octec Inc.
CPC分类号: G01N30/6095 , G01N30/52 , G01N2030/525
摘要: A high separation efficiency column (10) for chromatography is provided. The column for chromatography includes a first substrate (11) made of silicon and having a plurality of pillars (22) formed on one surface thereof; and a second substrate (12) bonded to the one surface of the first substrate (11) and constituting a flow path (13) together with the plurality of pillars (22) formed on the first substrate (11), wherein an anodically oxidized porous silicon layer (22a) is formed on a side surface of each pillar, and an anodically oxidized porous silicon layer (21a) is formed on a lower surface of the first substrate.
摘要翻译: 提供用于色谱的高分离效率柱(10)。 色谱柱包括:由硅制成并且在其一个表面上形成有多个柱(22)的第一基板(11) 和与所述第一基板(11)的所述一个表面接合并且与形成在所述第一基板(11)上的所述多个支柱(22)一起构成流动路径(13)的第二基板(12),其中,阳极氧化的多孔 硅层22a形成在每个柱的侧表面上,并且阳极氧化的多孔硅层21a形成在第一基板的下表面上。
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公开(公告)号:EP1758151A2
公开(公告)日:2007-02-28
申请号:EP06017631.0
申请日:2006-08-24
发明人: Yamanishi, Yoshiki , Harada, Muneo , Kitano, Takahiro , Kawaguchi, Tatsuzo , Hirota, Yoshihiro , Yamada, Kinji , Shinoda, Tomotaka , Okumura, Katsuya , Kawano, Shuichi
IPC分类号: H01L21/02 , H01L21/768
CPC分类号: H01L23/50 , H01G4/228 , H01G4/33 , H01L23/481 , H01L24/81 , H01L2224/81801 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01056 , H01L2924/01072 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/14 , H01L2924/19041 , H01L2924/30105 , H05K1/162 , H05K3/002 , H05K2201/09509 , H05K2201/096 , H05K2201/10378
摘要: A capacitor having a high quality and a manufacturing method of the same are provided.
A capacitor (10) has a lower electrode (13a) formed on an oxide film (12), a dielectric layer (14) formed on the lower electrode (13a), an upper electrode (15a,15c) formed so as to face the lower electrode (13a) with the dielectric layer (14) between, and an upper electrode (15b,15d) formed so as to cover the upper electrode (15c), an opening portion (62g) of the upper electrode (15c) and an opening portion (61g) of the dielectric layer (14). By forming the upper electrode (15a,15c) on the dielectric layer (14), it is possible to pattern the dielectric layer (14) by using the upper electrode (15a,15c) as a mask, and provide a capacitor (10) having a high-quality dielectric layer (14) by preventing impurity diffusion into the dielectric layer (14). By forming the upper electrode (15b,15d) on the dielectric layer (14), it is possible to prevent the dielectric layer (14) from being exposed to etching liquid, liquid developer, etc.摘要翻译: 提供了具有高质量的电容器及其制造方法。 电容器(10)具有形成在氧化膜(12)上的下电极(13a),形成在下电极(13a)上的电介质层(14),形成为面对 具有电介质层(14)的下电极(13a)与形成为覆盖上电极(15c)的上电极(15b,15d)之间,上电极(15c)的开口部分(62g)和 电介质层(14)的开口部(61g)。 通过在电介质层(14)上形成上部电极(15a,15c),可以通过使用上部电极(15a,15c)作为掩模对电介质层(14)进行图案化,并提供电容器(10) 通过防止杂质扩散到电介质层(14)中而具有高质量的电介质层(14)。 通过在电介质层(14)上形成上部电极(15b,15d),可以防止电介质层(14)暴露于蚀刻液体,液体显影剂等
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公开(公告)号:EP1758152A3
公开(公告)日:2007-12-05
申请号:EP06017632.8
申请日:2006-08-24
发明人: Yamanishi, Yoshiki , Harada, Muneo , Kitano, Takahiro , Kawaguchi, Tatsuzo , Hirota, Yoshihiro , Matsuda, Kenji , Yamada, Kinji , Shinoda, Tomotaka , Wang, Daohai , Okumura, Katsuya
CPC分类号: H01L28/55
摘要: Atmosphere in processing apparatus (100) is adjusted to, for example, oxygen atmosphere, by gas supply source (112) and the like. Interior of thermal processing apparatus (101) is set to oxygen atmosphere and raised to predetermined temperature. A wafer boat (161) containing wafer W having dielectric precursor layer formed is loaded into thermal processing apparatus (101) at speed at which no defects are produced in wafer W. Thereafter, reaction tube of thermal processing apparatus (101) has its internal temperature raised to baking temperature, to perform baking for predetermined time. The wafer W is cooled to predetermined temperature in thermal processing apparatus (101) and then to room temperature in processing apparatus (100), and carried out from processing apparatus (100). Before dielectric precursor layer is baked, it is maintained for predetermined time at temperature higher than temperature at which solvent in dielectric precursor layer is volatilized and lower than temperature at which dielectric precursor layer starts crystallization to vaporize residual solvent.
摘要翻译: 处理装置(100)内的气氛例如通过气体供给源(112)等调整为氧气氛。 热处理设备(101)的内部设置为氧气氛并升高到预定温度。 然后,将形成有电介质前体层的晶片W的晶片舟(161)以晶片W中没有产生缺陷的速度装载到热处理装置(101)中。然后,热处理装置(101)的反应管的内部温度 升高至烘烤温度,进行预定时间的烘烤。 晶片W在热处理装置(101)中冷却至规定温度后,在处理装置(100)中冷却至室温,从处理装置(100)运出。 在电介质前体层被烘烤之前,在高于电介质前体层中的溶剂挥发温度的温度下维持预定的时间,并低于电介质前体层开始结晶以蒸发残留溶剂的温度。
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公开(公告)号:EP1758151A3
公开(公告)日:2008-04-23
申请号:EP06017631.0
申请日:2006-08-24
发明人: Yamanishi, Yoshiki , Harada, Muneo , Kitano, Takahiro , Kawaguchi, Tatsuzo , Hirota, Yoshihiro , Yamada, Kinji , Shinoda, Tomotaka , Okumura, Katsuya , Kawano, Shuichi
IPC分类号: H01L21/02 , H01L21/60 , H01L23/50 , H01G4/228 , H01G4/33 , H05K1/16 , H01L23/522 , H01L21/768 , H05K3/00
CPC分类号: H01L23/50 , H01G4/228 , H01G4/33 , H01L23/481 , H01L24/81 , H01L2224/81801 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01056 , H01L2924/01072 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/14 , H01L2924/19041 , H01L2924/30105 , H05K1/162 , H05K3/002 , H05K2201/09509 , H05K2201/096 , H05K2201/10378
摘要: A capacitor having a high quality and a manufacturing method of the same are provided.
A capacitor (10) has a lower electrode (13a) formed on an oxide film (12), a dielectric layer (14) formed on the lower electrode (13a), an upper electrode (15a,15c) formed so as to face the lower electrode (13a) with the dielectric layer (14) between, and an upper electrode (15b,15d) formed so as to cover the upper electrode (15c), an opening portion (62g) of the upper electrode (15c) and an opening portion (61g) of the dielectric layer (14). By forming the upper electrode (15a,15c) on the dielectric layer (14), it is possible to pattern the dielectric layer (14) by using the upper electrode (15a,15c) as a mask, and provide a capacitor (10) having a high-quality dielectric layer (14) by preventing impurity diffusion into the dielectric layer (14). By forming the upper electrode (15b,15d) on the dielectric layer (14), it is possible to prevent the dielectric layer (14) from being exposed to etching liquid, liquid developer, etc.-
公开(公告)号:EP1758152A2
公开(公告)日:2007-02-28
申请号:EP06017632.8
申请日:2006-08-24
发明人: Yamanishi, Yoshiki , Harada, Muneo , Kitano, Takahiro , Kawaguchi, Tatsuzo , Hirota, Yoshihiro , Matsuda, Kenji , Yamada, Kinji , Shinoda, Tomotaka , Wang, Daohai , Okumura, Katsuya
CPC分类号: H01L28/55
摘要: Atmosphere in processing apparatus (100) is adjusted to, for example, oxygen atmosphere, by gas supply source (112) and the like. Interior of thermal processing apparatus (101) is set to oxygen atmosphere and raised to predetermined temperature. A wafer boat (161) containing wafer W having dielectric precursor layer formed is loaded into thermal processing apparatus (101) at speed at which no defects are produced in wafer W. Thereafter, reaction tube of thermal processing apparatus (101) has its internal temperature raised to baking temperature, to perform baking for predetermined time. The wafer W is cooled to predetermined temperature in thermal processing apparatus (101) and then to room temperature in processing apparatus (100), and carried out from processing apparatus (100). Before dielectric precursor layer is baked, it is maintained for predetermined time at temperature higher than temperature at which solvent in dielectric precursor layer is volatilized and lower than temperature at which dielectric precursor layer starts crystallization to vaporize residual solvent.
摘要翻译: 处理装置(100)中的气氛通过气体供给源(112)等调节为例如氧气氛。 将热处理装置(101)的内部设定为氧气氛并升温至规定温度。 包含形成有电介质前体层的晶片W的晶片舟皿161以晶片W中没有产生缺陷的速度被装载到热处理装置(101)中。此后,热处理装置(101)的反应管的内部温度 升温至烘烤温度,进行烘烤预定时间。 将晶片W在热处理装置(101)中冷却至规定温度,然后在处理装置(100)中冷却至室温,并从处理装置(100)进行。 在电介质前体层被烘烤之前,将其保持在高于电介质前体层中的溶剂挥发并且低于电介质前体层开始结晶以蒸发残余溶剂的温度的温度下的预定时间。
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公开(公告)号:EP0881477B1
公开(公告)日:2004-08-04
申请号:EP98304095.7
申请日:1998-05-22
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公开(公告)号:EP1653771A1
公开(公告)日:2006-05-03
申请号:EP06000364.7
申请日:1999-02-19
CPC分类号: G01D5/2417 , G01D5/24 , G01D5/2405 , G01H11/06 , H04R5/04
摘要: An apparatus for detecting amplitudes of frequency components contained in a vibration signal, characterized in that the apparatus comprises: a resonator array (20) comprising: first and second diaphragms (21 and 22) and a transversal beam (23) connected between them through which a vibration signal transverses from the first to the second diaphragm (22), a plurality of lateral beams (24) extending from the transversal beam (23) have different lengths to have different vibration resonant frequencies, respectively; and a plurality of first electrodes (25) attached to the lateral beams (24) and a plurality of second electrodes (26) which are stationary, the respective pairs of electrodes (25 and 26) forming capacitance sensors, a capacitance each of which varies in response to distance between the electrodes (25 and 26); a plurality of oscillators (11), a plurality of counters (4) for counting outputs of the oscillators (11), and signal processing means (2) for processing the count values from the counters (4) to provide amplitudes of respective frequency components which are contained in the vibration signal applied to the first diaphragm (21).
摘要翻译: 一种用于检测包含在振动信号中的频率分量的振幅的装置,其特征在于,所述装置包括:谐振器阵列(20),包括:第一和第二隔膜(21和22)和连接在它们之间的横向波束(23) 振动信号从第一隔膜(22)横向延伸,从横向波束(23)延伸的多个横梁(24)分别具有不同的长度以具有不同的振动共振频率; 和安装在横梁(24)上的多个第一电极(25)和固定的多个第二电极(26),各对电极(25和26)形成电容传感器,每个电容变化 响应于电极(25和26)之间的距离; 多个振荡器(11),用于计数振荡器(11)的输出的多个计数器(4)以及用于处理来自计数器(4)的计数值的信号处理装置(2),以提供各个频率分量 其被包含在施加到第一隔膜(21)的振动信号中。
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公开(公告)号:EP1653771B1
公开(公告)日:2007-07-11
申请号:EP06000364.7
申请日:1999-02-19
发明人: Matsumoto, Toshiyuki , Hirota, Yoshihiro , Harada, Muneo , Miyano, Takaya Ritsumeikan University
CPC分类号: G01D5/2417 , G01D5/24 , G01D5/2405 , G01H11/06 , H04R5/04
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