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1.发明公开
公开(公告)号：EP3345206A1
公开(公告)日：2018-07-11
申请号：EP16758167.7
申请日：2016-08-30
IPC分类号： H01J37/32 , H01L31/18 , C23C14/04 , C23C16/509
CPC分类号： H01J37/32091 , C23C16/04 , C23C16/045 , C23C16/45565 , C23C16/45574 , C23C16/505 , H01J37/32366 , H01J37/32541 , H01J37/32568 , H01J37/32816 , H01L31/03921 , H01L31/202 , Y02E10/50 , Y02P70/521
摘要： The invention concerns a plasma generating apparatus, for manufacturing devices having patterned layers, comprising a first electrode assembly (1) and a second electrode assembly (2) placed in a plasma reactor chamber, an electrical power supply (6) for generating a voltage difference between the first electrode assembly (1) and the second electrode assembly (2). According to the invention, the second electrode assembly (2) is configured for receiving a substrate (5), and the first electrode assembly (1) comprises a plurality of protrusions (11) and a plurality of recesses (12, 13, 14, 15, 16, 17, 18), the protrusions (11) and recesses (12, 13, 14, 15, 16, 17, 18) being dimensioned and set at respective distances (D1, D2) from the surface (51) of the substrate (5) so as to generate a plurality of spatially isolated plasma zones (21, 22) located selectively either between said surface (51) of the substrate (5) and said plurality of recesses (12, 13, 14, 15, 16, 17, 18) or between said surface (51) of the substrate (5) and said plurality of protrusions (11).
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2.发明公开
公开(公告)号：EP2795677A1
公开(公告)日：2014-10-29
申请号：EP12808817.6
申请日：2012-12-20
IPC分类号： H01L31/0236
摘要： The invention relates to a process for texturing the surface of a silicon substrate, comprising a step of exposing said surface to an MDECR plasma generated, at least from argon, using between 1.5 W/cm
2 and 6.5 W/cm
2 of plasma power in a matrix distributed electron cyclotron resonance plasma source, the substrate bias being between 100 V and 300 V.-
公开(公告)号：EP2795677B1
公开(公告)日：2020-05-06
申请号：EP12808817.6
申请日：2012-12-20
申请人： Total Marketing Services , Centre National de la Recherche Scientifique (C.N.R.S.) , Ecole Polytechnique
IPC分类号： H01L31/0236
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公开(公告)号：EP3404693A1
公开(公告)日：2018-11-21
申请号：EP17305586.4
申请日：2017-05-19
发明人： BRUNEAU, Bastien , JOHNSON, Erik , BULKIN, Pavel , HABKA, Nada , POULAIN, Gilles , BENMAMMAR, Nacib
IPC分类号： H01J37/32 , C23C14/04 , C23C16/04 , H01L21/266 , H01L21/311 , H01L21/3213
摘要： An apparatus for patterned processing comprises a source of input gas (2), a source of energy suitable for generating a plasma from the input gas (2) in a plasma region and a grounded sample holder (12) configured for receiving a solid sample (5).
According to the invention, the apparatus comprises a mask (4) arranged between the plasma region and the grounded sample holder (12), the mask (4) having a first face (45) oriented toward the plasma region and a second face (46) oriented toward a surface (51) of the solid sample (5) to be processed, the mask (4) comprising a mask opening (40) extending from the first face to the second face, and an electrical power supply (16) adapted for applying a direct-current bias voltage to the mask, and the mask opening (40) being dimensioned and shaped so as to generate spatially selective patterned processing on the surface (51) of the solid sample (5).-
公开(公告)号：EP3625816A1
公开(公告)日：2020-03-25
申请号：EP18723874.6
申请日：2018-05-18
发明人： BRUNEAU, Bastien , JOHNSON, Erik , BULKIN, Pavel , HABKA, Nada , POULAIN, Gilles , BENMAMMAR, Nacib
IPC分类号： H01J37/32 , C23C14/04 , C23C16/04 , H01L21/266 , H01L21/311 , H01L21/3213
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公开(公告)号：EP3404693B1
公开(公告)日：2019-11-13
申请号：EP17305586.4
申请日：2017-05-19
发明人： BRUNEAU, Bastien , JOHNSON, Erik , BULKIN, Pavel , HABKA, Nada , POULAIN, Gilles , BENMAMMAR, Nacib
IPC分类号： H01J37/32 , C23C14/04 , C23C16/04 , H01L21/266 , H01L21/311 , H01L21/3213
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