公开(公告)号：EP3404693A1

公开(公告)日：2018-11-21

申请号：EP17305586.4

申请日：2017-05-19

申请人： Total SA ,  Ecole Polytechnique ,  CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE

发明人： BRUNEAU, Bastien ,  JOHNSON, Erik ,  BULKIN, Pavel ,  HABKA, Nada ,  POULAIN, Gilles ,  BENMAMMAR, Nacib

IPC分类号： H01J37/32 ,  C23C14/04 ,  C23C16/04 ,  H01L21/266 ,  H01L21/311 ,  H01L21/3213

摘要： An apparatus for patterned processing comprises a source of input gas (2), a source of energy suitable for generating a plasma from the input gas (2) in a plasma region and a grounded sample holder (12) configured for receiving a solid sample (5).
According to the invention, the apparatus comprises a mask (4) arranged between the plasma region and the grounded sample holder (12), the mask (4) having a first face (45) oriented toward the plasma region and a second face (46) oriented toward a surface (51) of the solid sample (5) to be processed, the mask (4) comprising a mask opening (40) extending from the first face to the second face, and an electrical power supply (16) adapted for applying a direct-current bias voltage to the mask, and the mask opening (40) being dimensioned and shaped so as to generate spatially selective patterned processing on the surface (51) of the solid sample (5).

公开(公告)号：EP2795677A1

公开(公告)日：2014-10-29

申请号：EP12808817.6

申请日：2012-12-20

申请人： Total SA ,  Centre National de la Recherche Scientifique (CNRS) ,  Ecole Polytechnique

发明人： HABKA, Nada ,  BULKIN, Pavel ,  ROCA i CABARROCAS, Pere

IPC分类号： H01L31/0236

摘要： The invention relates to a process for texturing the surface of a silicon substrate, comprising a step of exposing said surface to an MDECR plasma generated, at least from argon, using between 1.5 W/cm
2 and 6.5 W/cm
2 of plasma power in a matrix distributed electron cyclotron resonance plasma source, the substrate bias being between 100 V and 300 V.

公开(公告)号：EP3625816A1

公开(公告)日：2020-03-25

申请号：EP18723874.6

申请日：2018-05-18

申请人： Total SA ,  Ecole Polytechnique ,  Centre National de la Recherche Scientifique

发明人： BRUNEAU, Bastien ,  JOHNSON, Erik ,  BULKIN, Pavel ,  HABKA, Nada ,  POULAIN, Gilles ,  BENMAMMAR, Nacib

IPC分类号： H01J37/32 ,  C23C14/04 ,  C23C16/04 ,  H01L21/266 ,  H01L21/311 ,  H01L21/3213

公开(公告)号：EP3404693B1

公开(公告)日：2019-11-13

申请号：EP17305586.4

申请日：2017-05-19

申请人： Total SA ,  Ecole Polytechnique ,  CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE

发明人： BRUNEAU, Bastien ,  JOHNSON, Erik ,  BULKIN, Pavel ,  HABKA, Nada ,  POULAIN, Gilles ,  BENMAMMAR, Nacib

IPC分类号： H01J37/32 ,  C23C14/04 ,  C23C16/04 ,  H01L21/266 ,  H01L21/311 ,  H01L21/3213

公开(公告)号：EP3345206A1

公开(公告)日：2018-07-11

申请号：EP16758167.7

申请日：2016-08-30

申请人： Total S.A. ,  Ecole Polytechnique ,  Centre National de la Recherche Scientifique

发明人： JOHNSON, Erik ,  BRUNEAU, Bastien ,  ROCA I CABARROCAS, Pere ,  BULKIN, Pavel ,  HABKA, Nada

IPC分类号： H01J37/32 ,  H01L31/18 ,  C23C14/04 ,  C23C16/509

CPC分类号： H01J37/32091 ,  C23C16/04 ,  C23C16/045 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/505 ,  H01J37/32366 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32816 ,  H01L31/03921 ,  H01L31/202 ,  Y02E10/50 ,  Y02P70/521

摘要： The invention concerns a plasma generating apparatus, for manufacturing devices having patterned layers, comprising a first electrode assembly (1) and a second electrode assembly (2) placed in a plasma reactor chamber, an electrical power supply (6) for generating a voltage difference between the first electrode assembly (1) and the second electrode assembly (2). According to the invention, the second electrode assembly (2) is configured for receiving a substrate (5), and the first electrode assembly (1) comprises a plurality of protrusions (11) and a plurality of recesses (12, 13, 14, 15, 16, 17, 18), the protrusions (11) and recesses (12, 13, 14, 15, 16, 17, 18) being dimensioned and set at respective distances (D1, D2) from the surface (51) of the substrate (5) so as to generate a plurality of spatially isolated plasma zones (21, 22) located selectively either between said surface (51) of the substrate (5) and said plurality of recesses (12, 13, 14, 15, 16, 17, 18) or between said surface (51) of the substrate (5) and said plurality of protrusions (11).

公开(公告)号：EP2795677B1

公开(公告)日：2020-05-06

申请号：EP12808817.6

申请日：2012-12-20

申请人： Total Marketing Services ,  Centre National de la Recherche Scientifique (C.N.R.S.) ,  Ecole Polytechnique

发明人： HABKA, Nada ,  BULKIN, Pavel ,  ROCA i CABARROCAS, Pere

IPC分类号： H01L31/0236

公开(公告)号：EP3136419B1

公开(公告)日：2018-04-18

申请号：EP15306338.3

申请日：2015-08-31

申请人： Total S.A. ,  École Polytechnique ,  Centre National de la Recherche Scientifique

发明人： JOHNSON, Erik ,  BRUNEAU, Bastien ,  ROCA I CABARROCAS, Pere ,  BULKIN, Pavel

IPC分类号： H01J37/32 ,  H01L31/18 ,  C23C14/04 ,  C23C16/509

CPC分类号： H01J37/32091 ,  C23C16/04 ,  C23C16/045 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/505 ,  H01J37/32366 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32816 ,  H01L31/03921 ,  H01L31/202 ,  Y02E10/50 ,  Y02P70/521

摘要： The invention concerns a plasma generating apparatus, for manufacturing devices having patterned layers, comprising a first electrode assembly (1) and a second electrode assembly (2) placed in a plasma reactor chamber, an electrical power supply (6) for generating a voltage difference between the first electrode assembly (1) and the second electrode assembly (2). According to the invention, the second electrode assembly (2) is configured for receiving a substrate (5), and the first electrode assembly (1) comprises a plurality of protrusions (11) and a plurality of recesses (12, 13, 14, 15, 16, 17, 18), the protrusions (11) and recesses (12, 13, 14, 15, 16, 17, 18) being dimensioned and set at respective distances (D1, D2) from the surface (51) of the substrate (5) so as to generate a plurality of spatially isolated plasma zones (21, 22) located selectively either between said surface (51) of the substrate (5) and said plurality of recesses (12, 13, 14, 15, 16, 17, 18) or between said surface (51) of the substrate (5) and said plurality of protrusions (11).

公开(公告)号：EP3136419A1

公开(公告)日：2017-03-01

申请号：EP15306338.3

申请日：2015-08-31

申请人： TOTAL MARKETING SERVICES ,  École Polytechnique ,  Centre National de la Recherche Scientifique

发明人： JOHNSON, Erik ,  BRUNEAU, Bastien ,  ROCA I CABARROCAS, Pere ,  BULKIN, Pavel

IPC分类号： H01J37/32 ,  H01L31/18 ,  C23C14/04 ,  C23C16/509

CPC分类号： H01J37/32091 ,  C23C16/04 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/505 ,  H01J37/32366 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32816 ,  H01L31/03921 ,  H01L31/202 ,  Y02E10/50

摘要： The invention concerns a plasma generating apparatus, for manufacturing devices having patterned layers, comprising a first electrode assembly (1) and a second electrode assembly (2) placed in a plasma reactor chamber, an electrical power supply (6) for generating a voltage difference between the first electrode assembly (1) and the second electrode assembly (2).
According to the invention, the second electrode assembly (2) is configured for receiving a substrate (5), and the first electrode assembly (1) comprises a plurality of protrusions (11) and a plurality of recesses (12, 13, 14, 15, 16, 17, 18), the protrusions (11) and recesses (12, 13, 14, 15, 16, 17, 18) being dimensioned and set at respective distances (D1, D2) from the surface (51) of the substrate (5) so as to generate a plurality of spatially isolated plasma zones (21, 22) located selectively either between said surface (51) of the substrate (5) and said plurality of recesses (12, 13, 14, 15, 16, 17, 18) or between said surface (51) of the substrate (5) and said plurality of protrusions (11).

摘要翻译： 本发明涉及一种等离子体生成装置，用于具有图案化的层，其包括第一电极组件的制造设备（1）和第二电极组件（2）在等离子体反应器腔室放置到电电源，用于产生电压差（6） 第一电极组件（1）和第二电极组件（2）之间。 。根据本发明，第二电极组件（2）被配置用于接收基片（5），并且所述第一电极组件（1）包括突出部的多个（11）和凹部（12，13，14的复数， 15，16，17，18），所述突出（11）和凹部（12，13，14，15，16，17，18）的尺寸，并在从表面（51）respectivement距离（D1，D2）设定 基板（5），以便生成位于选择性要么基板（5）和凹部（12，13，14，15的所述多个所述表面（51）之间的空间分离的等离子体区域（21，22）的复数， 16，17，18）或基片的所述表面（51）之间的（5）和凸出的所述多个（11）。

公开(公告)号：EP2087502A1

公开(公告)日：2009-08-12

申请号：EP07819350.5

申请日：2007-10-26

申请人： Dow Corning Corporation ,  Ecole Polytechnique

发明人： ROCA I CABARROCAS, Pere ,  BULKIN, Pavel ,  DAINEKA, Dmitri ,  LEEMPOEL, Patrick ,  DESCAMPS, Pierre ,  KERVYN DE MEERENDRE, Thibault

IPC分类号： H01J37/32

CPC分类号： H01J37/32678 ,  C23C16/24 ,  C23C16/511 ,  H01J37/32192 ,  H05H1/46

摘要： An apparatus is described for depositing a film on a substrate from a plasma. The apparatus comprises an enclosure, a plurality of plasma generator elements disposed within the enclosure, and means, also within the enclosure, for supporting the substrate. Each plasma generator element comprises a microwave antenna having an end from which microwaves are emitted, a magnet disposed in the region of the said antenna end and defining therewith an electron cyclotron resonance region in which a plasma can be generated, and a gas entry element having an outlet for a film precursor gas or a plasma gas. The outlet is arranged to direct gas towards a film deposition area situated beyond the magnet, as considered from the microwave antenna, the outlet being located in, or above, the hot electron confinement envelope.

公开(公告)号：EP2080216A1

公开(公告)日：2009-07-22

申请号：EP07819352.1

申请日：2007-10-26

申请人： Dow Corning Corporation ,  Ecole Polytechnique

发明人： ROCA I CABARROCAS, Pere ,  BULKIN, Pavel ,  DAINEKA, Dmitri ,  LEEMPOEL, Patrick ,  DESCAMPS, Pierre ,  KERVYN DE MEERENDRE, Thibault

IPC分类号： H01J37/32

CPC分类号： C23C16/45523 ,  C23C16/24 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/32678 ,  H01L31/03762 ,  H01L31/065 ,  H01L31/076 ,  H01L31/202 ,  Y02E10/548 ,  Y02P70/521

摘要： A method is described of forming a film of an amorphous material on a substrate by deposition from a plasma. The substrate is placed in an enclosure, a film precursor gas is introduced into the enclosure, and unreacted and dissociated gas is extracted from the enclosure so as to provide a low pressure therein. Microwave energy is introduced into the gas within the enclosure to produce a plasma therein by distributed electron cyclotron resonance (DECR) and cause material to be deposited from the plasma on the substrate. The said flow rate of the film precursor gas is altered during the course of deposition of material, so as to cause the bandgap to vary over the thickness of the deposited material.