摘要:
An apparatus for patterned processing comprises a source of input gas (2), a source of energy suitable for generating a plasma from the input gas (2) in a plasma region and a grounded sample holder (12) configured for receiving a solid sample (5). According to the invention, the apparatus comprises a mask (4) arranged between the plasma region and the grounded sample holder (12), the mask (4) having a first face (45) oriented toward the plasma region and a second face (46) oriented toward a surface (51) of the solid sample (5) to be processed, the mask (4) comprising a mask opening (40) extending from the first face to the second face, and an electrical power supply (16) adapted for applying a direct-current bias voltage to the mask, and the mask opening (40) being dimensioned and shaped so as to generate spatially selective patterned processing on the surface (51) of the solid sample (5).
摘要:
The invention concerns a plasma generating apparatus, for manufacturing devices having patterned layers, comprising a first electrode assembly (1) and a second electrode assembly (2) placed in a plasma reactor chamber, an electrical power supply (6) for generating a voltage difference between the first electrode assembly (1) and the second electrode assembly (2). According to the invention, the second electrode assembly (2) is configured for receiving a substrate (5), and the first electrode assembly (1) comprises a plurality of protrusions (11) and a plurality of recesses (12, 13, 14, 15, 16, 17, 18), the protrusions (11) and recesses (12, 13, 14, 15, 16, 17, 18) being dimensioned and set at respective distances (D1, D2) from the surface (51) of the substrate (5) so as to generate a plurality of spatially isolated plasma zones (21, 22) located selectively either between said surface (51) of the substrate (5) and said plurality of recesses (12, 13, 14, 15, 16, 17, 18) or between said surface (51) of the substrate (5) and said plurality of protrusions (11).
摘要:
The invention concerns a plasma generating apparatus, for manufacturing devices having patterned layers, comprising a first electrode assembly (1) and a second electrode assembly (2) placed in a plasma reactor chamber, an electrical power supply (6) for generating a voltage difference between the first electrode assembly (1) and the second electrode assembly (2). According to the invention, the second electrode assembly (2) is configured for receiving a substrate (5), and the first electrode assembly (1) comprises a plurality of protrusions (11) and a plurality of recesses (12, 13, 14, 15, 16, 17, 18), the protrusions (11) and recesses (12, 13, 14, 15, 16, 17, 18) being dimensioned and set at respective distances (D1, D2) from the surface (51) of the substrate (5) so as to generate a plurality of spatially isolated plasma zones (21, 22) located selectively either between said surface (51) of the substrate (5) and said plurality of recesses (12, 13, 14, 15, 16, 17, 18) or between said surface (51) of the substrate (5) and said plurality of protrusions (11).
摘要:
The invention concerns a plasma generating apparatus, for manufacturing devices having patterned layers, comprising a first electrode assembly (1) and a second electrode assembly (2) placed in a plasma reactor chamber, an electrical power supply (6) for generating a voltage difference between the first electrode assembly (1) and the second electrode assembly (2). According to the invention, the second electrode assembly (2) is configured for receiving a substrate (5), and the first electrode assembly (1) comprises a plurality of protrusions (11) and a plurality of recesses (12, 13, 14, 15, 16, 17, 18), the protrusions (11) and recesses (12, 13, 14, 15, 16, 17, 18) being dimensioned and set at respective distances (D1, D2) from the surface (51) of the substrate (5) so as to generate a plurality of spatially isolated plasma zones (21, 22) located selectively either between said surface (51) of the substrate (5) and said plurality of recesses (12, 13, 14, 15, 16, 17, 18) or between said surface (51) of the substrate (5) and said plurality of protrusions (11).
摘要:
A method for generating an ion flux asymmetry in a capacitively coupled radiofrequency plasma reactor (4) comprises a step of exciting a first electrode (24) with a radiofrequency voltage waveform. The normalized voltage waveform is a waveform approximated, with a degree of approximation, by a normalized sawtooth wave radiofrequency function having different up and down slopes. The degree of approximation of the approximate waveform and the pressure P of the gas (6) are sufficiently high to cause an ion flux asymmetry to appear between the ion flux at the first electrode and the ion flux at a second electrode (26).