PLASMA GENERATING APPARATUS AND METHOD OF MANUFACTURING PATTERNED DEVICES USING SPATIALLY RESOLVED PLASMA PROCESSING
    7.
    发明公开
    PLASMA GENERATING APPARATUS AND METHOD OF MANUFACTURING PATTERNED DEVICES USING SPATIALLY RESOLVED PLASMA PROCESSING 有权
    等离子发生装置及其制造方法结构化的设备通过地理分辨等离子体处理

    公开(公告)号:EP3136419A1

    公开(公告)日:2017-03-01

    申请号:EP15306338.3

    申请日:2015-08-31

    摘要: The invention concerns a plasma generating apparatus, for manufacturing devices having patterned layers, comprising a first electrode assembly (1) and a second electrode assembly (2) placed in a plasma reactor chamber, an electrical power supply (6) for generating a voltage difference between the first electrode assembly (1) and the second electrode assembly (2).
    According to the invention, the second electrode assembly (2) is configured for receiving a substrate (5), and the first electrode assembly (1) comprises a plurality of protrusions (11) and a plurality of recesses (12, 13, 14, 15, 16, 17, 18), the protrusions (11) and recesses (12, 13, 14, 15, 16, 17, 18) being dimensioned and set at respective distances (D1, D2) from the surface (51) of the substrate (5) so as to generate a plurality of spatially isolated plasma zones (21, 22) located selectively either between said surface (51) of the substrate (5) and said plurality of recesses (12, 13, 14, 15, 16, 17, 18) or between said surface (51) of the substrate (5) and said plurality of protrusions (11).

    摘要翻译: 本发明涉及一种等离子体生成装置,用于具有图案化的层,其包括第一电极组件的制造设备(1)和第二电极组件(2)在等离子体反应器腔室放置到电电源,用于产生电压差(6) 第一电极组件(1)和第二电极组件(2)之间。 。根据本发明,第二电极组件(2)被配置用于接收基片(5),并且所述第一电极组件(1)包括突出部的多个(11)和凹部(12,13,14的复数, 15,16,17,18),所述突出(11)和凹部(12,13,14,15,16,17,18)的尺寸,并在从表面(51)respectivement距离(D1,D2)设定 基板(5),以便生成位于选择性要么基板(5)和凹部(12,13,14,15的所述多个所述表面(51)之间的空间分离的等离子体区域(21,22)的复数, 16,17,18)或基片的所述表面(51)之间的(5)和凸出的所述多个(11)。

    PROCÉDÉ ET SYSTÈME POUR CONTRÔLER DES FLUX D'IONS DANS UN PLASMA RF
    8.
    发明公开
    PROCÉDÉ ET SYSTÈME POUR CONTRÔLER DES FLUX D'IONS DANS UN PLASMA RF 审中-公开
    VERFAHREN UND系统ZUR STEUERUNG EINES IONENFLUSSES IN EINEM RF-PLASMA

    公开(公告)号:EP3138116A1

    公开(公告)日:2017-03-08

    申请号:EP15725891.4

    申请日:2015-04-30

    IPC分类号: H01J37/32

    摘要: A method for generating an ion flux asymmetry in a capacitively coupled radiofrequency plasma reactor (4) comprises a step of exciting a first electrode (24) with a radiofrequency voltage waveform. The normalized voltage waveform is a waveform approximated, with a degree of approximation, by a normalized sawtooth wave radiofrequency function having different up and down slopes. The degree of approximation of the approximate waveform and the pressure P of the gas (6) are sufficiently high to cause an ion flux asymmetry to appear between the ion flux at the first electrode and the ion flux at a second electrode (26).

    摘要翻译: 气体的近似波形和压力P的近似程度足够高,导致在第一电极处的离子流和第二电极处的离子流之间的离子流的不对称性的出现。