公开(公告)号：EP3223303A1

公开(公告)日：2017-09-27

申请号：EP15861337.2

申请日：2015-11-17

申请人： Toyo Tanso Co., Ltd. ,  Kwansei Gakuin Educational Foundation

发明人： TORIMI, Satoshi ,  SHINOHARA, Masato ,  TERAMOTO, Youji ,  YABUKI, Norihito ,  NOGAMI, Satoru ,  KANEKO, Tadaaki ,  ASHIDA, Koji ,  KUTSUMA, Yasunori

IPC分类号： H01L21/302 ,  C30B29/36 ,  C30B33/12

CPC分类号： H01L21/30604 ,  C30B29/36 ,  C30B33/12 ,  C30B35/002 ,  H01L21/302 ,  H01L21/67063

摘要： Provided is a method for controlling the rate of etching of a SiC substrate based on a composition of a storing container. The etching method of the present invention is for etching the SiC substrate by heating the SiC substrate under Si vapor pressure, in a state where the SiC substrate is stored in a crucible. The crucible is formed of a tantalum metal, and has a tantalum carbide layer provided on an internal space side of the tantalum metal, and a tantalum silicide layer provided on the side further toward the internal space side than the tantalum carbide layer. The rate of etching of the SiC substrate is controlled based on difference in a composition of the tantalum silicide layer.

摘要翻译： 提供了一种基于储存容器的组成来控制SiC衬底的蚀刻速率的方法。 本发明的蚀刻方法用于在将SiC基板收纳在坩埚中的状态下，通过在Si蒸气压下加热SiC基板来对SiC基板进行蚀刻。 坩埚由钽金属形成，并且具有设置在钽金属的内部空间侧上的碳化钽层和设置在比碳化钽层更靠近内部空间侧的侧面上的硅化钽层。 基于钽硅化物层的组成差异来控制SiC衬底的蚀刻速率。

公开(公告)号：EP3222759A1

公开(公告)日：2017-09-27

申请号：EP15861692.0

申请日：2015-11-17

申请人： Kwansei Gakuin Educational Foundation ,  Toyo Tanso Co., Ltd.

发明人： KANEKO, Tadaaki ,  ASHIDA, Koji ,  KUTSUMA, Yasunori ,  TORIMI, Satoshi ,  SHINOHARA, Masato ,  TERAMOTO, Youji ,  YABUKI, Norihito ,  NOGAMI, Satoru

IPC分类号： C30B33/12 ,  C30B29/36 ,  H01L21/302

CPC分类号： H01L21/30621 ,  C30B29/36 ,  C30B33/12 ,  H01L21/0445 ,  H01L21/302 ,  H01L21/304

摘要： Provided is a surface treatment method for a SiC substrate (40), the method being capable of controlling whether to generate a step bunching or the type of step bunching that is generated. In the surface treatment method in which the surface of the SiC substrate (40) is etched by heating the SiC substrate (40) under Si vapor pressure, an etching mode and an etching depth which are determined at least on the basis of an etching rate, are controlled to etch the SiC substrate (40), so that a surface pattern of the SiC substrate (40) after etching treatment is controlled.

摘要翻译： 提供了一种用于SiC衬底（40）的表面处理方法，该方法能够控制是产生台阶聚集还是产生的台阶聚集的类型。 在通过在Si蒸气压下加热SiC衬底（40）来对SiC衬底（40）的表面进行蚀刻的表面处理方法，蚀刻模式和蚀刻深度至少​​基于蚀刻速率 被控制以蚀刻SiC衬底（40），从而控制蚀刻处理后的SiC衬底（40）的表面图案。

公开(公告)号：EP3605585A1

公开(公告)日：2020-02-05

申请号：EP18771381.3

申请日：2018-03-20

申请人： Toyo Tanso Co., Ltd.

发明人： TORIMI, Satoshi ,  SUDO, Yusuke ,  SHINOHARA, Masato ,  TERAMOTO, Youji ,  SAKAGUCHI, Takuya ,  NOGAMI, Satoru ,  KITABATAKE, Makoto

IPC分类号： H01L21/205 ,  C30B29/36 ,  H01L21/20

摘要： In a method for manufacturing a reformed SiC wafer 41 (a surface treatment method for a SiC wafer) having its surface that is reformed by processing an untreated SiC wafer 40 before formation of an epitaxial layer 42, the method includes a surface reforming step as described below. That is, the untreated SiC wafer 40 includes BPDs as dislocations parallel to an inside of a (0001) face, and TEDs. Property of the surface of the untreated SiC wafer 40 is changed so as to have higher rate in which portions having BPDs on the surface of the untreated SiC wafer 40 propagate as TEDs at a time of forming the epitaxial layer 42.