公开(公告)号：EP3223303A1

公开(公告)日：2017-09-27

申请号：EP15861337.2

申请日：2015-11-17

申请人： Toyo Tanso Co., Ltd. ,  Kwansei Gakuin Educational Foundation

发明人： TORIMI, Satoshi ,  SHINOHARA, Masato ,  TERAMOTO, Youji ,  YABUKI, Norihito ,  NOGAMI, Satoru ,  KANEKO, Tadaaki ,  ASHIDA, Koji ,  KUTSUMA, Yasunori

IPC分类号： H01L21/302 ,  C30B29/36 ,  C30B33/12

CPC分类号： H01L21/30604 ,  C30B29/36 ,  C30B33/12 ,  C30B35/002 ,  H01L21/302 ,  H01L21/67063

摘要： Provided is a method for controlling the rate of etching of a SiC substrate based on a composition of a storing container. The etching method of the present invention is for etching the SiC substrate by heating the SiC substrate under Si vapor pressure, in a state where the SiC substrate is stored in a crucible. The crucible is formed of a tantalum metal, and has a tantalum carbide layer provided on an internal space side of the tantalum metal, and a tantalum silicide layer provided on the side further toward the internal space side than the tantalum carbide layer. The rate of etching of the SiC substrate is controlled based on difference in a composition of the tantalum silicide layer.

摘要翻译： 提供了一种基于储存容器的组成来控制SiC衬底的蚀刻速率的方法。 本发明的蚀刻方法用于在将SiC基板收纳在坩埚中的状态下，通过在Si蒸气压下加热SiC基板来对SiC基板进行蚀刻。 坩埚由钽金属形成，并且具有设置在钽金属的内部空间侧上的碳化钽层和设置在比碳化钽层更靠近内部空间侧的侧面上的硅化钽层。 基于钽硅化物层的组成差异来控制SiC衬底的蚀刻速率。

公开(公告)号：EP3222759A1

公开(公告)日：2017-09-27

申请号：EP15861692.0

申请日：2015-11-17

申请人： Kwansei Gakuin Educational Foundation ,  Toyo Tanso Co., Ltd.

发明人： KANEKO, Tadaaki ,  ASHIDA, Koji ,  KUTSUMA, Yasunori ,  TORIMI, Satoshi ,  SHINOHARA, Masato ,  TERAMOTO, Youji ,  YABUKI, Norihito ,  NOGAMI, Satoru

IPC分类号： C30B33/12 ,  C30B29/36 ,  H01L21/302

CPC分类号： H01L21/30621 ,  C30B29/36 ,  C30B33/12 ,  H01L21/0445 ,  H01L21/302 ,  H01L21/304

摘要： Provided is a surface treatment method for a SiC substrate (40), the method being capable of controlling whether to generate a step bunching or the type of step bunching that is generated. In the surface treatment method in which the surface of the SiC substrate (40) is etched by heating the SiC substrate (40) under Si vapor pressure, an etching mode and an etching depth which are determined at least on the basis of an etching rate, are controlled to etch the SiC substrate (40), so that a surface pattern of the SiC substrate (40) after etching treatment is controlled.

摘要翻译： 提供了一种用于SiC衬底（40）的表面处理方法，该方法能够控制是产生台阶聚集还是产生的台阶聚集的类型。 在通过在Si蒸气压下加热SiC衬底（40）来对SiC衬底（40）的表面进行蚀刻的表面处理方法，蚀刻模式和蚀刻深度至少​​基于蚀刻速率 被控制以蚀刻SiC衬底（40），从而控制蚀刻处理后的SiC衬底（40）的表面图案。

公开(公告)号：EP3128535B1

公开(公告)日：2020-06-03

申请号：EP15773856.8

申请日：2015-03-10

申请人： Toyo Tanso Co., Ltd.

发明人： TORIMI, Satoshi ,  YABUKI, Norihito ,  NOGAMI, Satoru

IPC分类号： H01L21/302 ,  H01L21/205 ,  C30B29/36 ,  C30B33/08

公开(公告)号：EP3128047B1

公开(公告)日：2018-09-26

申请号：EP15773120.9

申请日：2015-03-10

申请人： Toyo Tanso Co., Ltd.

发明人： YABUKI, Norihito ,  TORIMI, Satoshi ,  NOGAMI, Satoru

IPC分类号： H01L21/3065 ,  H01L21/302 ,  H01L21/324 ,  H01L21/205 ,  H01L21/67 ,  C30B19/04 ,  C30B19/12 ,  C30B29/36 ,  C30B33/12 ,  H01L21/02 ,  H01L29/16

CPC分类号： C30B19/12 ,  C30B19/04 ,  C30B29/36 ,  C30B33/12 ,  H01L21/02019 ,  H01L21/02378 ,  H01L21/02529 ,  H01L21/02658 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3247 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/67115 ,  H01L29/1608

摘要： Provided is a method in which the rate of growth is not lowered even when a cut SiC seed crystal is used in performing MSE process. A SiC seed crystal that is used as a seed crystal in metastable solvent epitaxy process (MSE process) is heated under Si atmosphere and the surface of the SiC seed crystal is etched to remove a work-affected layer that was formed by cutting. Work-affected layers generated on SiC seed crystals are known to inhibit growth during MSE process, and therefore removing the work-affected layers can prevent lowering of the rate of growth.

公开(公告)号：EP2922084B1

公开(公告)日：2018-01-10

申请号：EP13855882.0

申请日：2013-11-15

申请人： Toyo Tanso Co., Ltd.

发明人： TORIMI, Satoshi ,  YABUKI, Norihito ,  NOGAMI, Satoru

IPC分类号： H01L21/265 ,  C30B29/36 ,  C30B33/12 ,  H01L21/02 ,  H01L21/20 ,  H01L21/302 ,  C23C10/22 ,  F27B17/00 ,  C23C10/02 ,  C30B35/00 ,  H01L21/04 ,  H01L29/16 ,  H01L21/67 ,  H01L21/3065

CPC分类号： H01L21/673 ,  C23C10/02 ,  C23C10/22 ,  C30B29/36 ,  C30B33/12 ,  C30B35/002 ,  F27B17/0025 ,  H01L21/046 ,  H01L21/302 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/67069 ,  H01L21/6719 ,  H01L29/1608

摘要： The present invention is to provide a storing container wherein Si does not drop onto a single crystal SiC substrate, and Si pressure distribution in an internal space can be made uniform. This storing container stores therein a single crystal SiC substrate to be etched by means of a heat treatment under Si vapor pressure. The storing container is formed of a tantalum metal, and has a tantalum carbide layer provided on an internal space side, and a tantalum silicide layer provided on the side further toward the internal space side than the tantalum carbide layer. The tantalum silicide layer supplies Si to the internal space. Furthermore, the tantalum silicide layer is different from adhered Si, and does not melt and drop.

公开(公告)号：EP3128535A1

公开(公告)日：2017-02-08

申请号：EP15773856.8

申请日：2015-03-10

申请人： Toyo Tanso Co., Ltd.

发明人： TORIMI, Satoshi ,  YABUKI, Norihito ,  NOGAMI, Satoru

IPC分类号： H01L21/302 ,  C30B29/36 ,  C30B33/08 ,  H01L21/205 ,  H01L21/265

摘要： When a SiC substrate (40) after performing mechanical treatment is heat-treated under SiC atmosphere to etch the SiC substrate (40), the etching rate is controlled by adjusting the inert gas pressure around the periphery of the SiC substrate (40). As a result, when latent scratches or the like exist in the SiC substrate (40), the latent scratches or the like can be removed. Accordingly, the surface of the SiC substrate (40) does not become rough, even if epitaxial growth and heat treatment and the like are performed. This can manufacture high-quality SiC substrates.

摘要翻译： 当在SiC气氛下对进行机械处理后的SiC衬底（40）进行热处理以刻蚀SiC衬底（40）时，通过调整SiC衬底（40）周围的惰性气体压力来控制刻蚀速率。 结果，当在SiC衬底（40）中存在潜在划痕等时，可以去除潜在划痕等。 因此，即使进行外延生长和热处理等，SiC衬底（40）的表面也不会变得粗糙。 这可以制造高质量的SiC衬底。

公开(公告)号：EP4033519A1

公开(公告)日：2022-07-27

申请号：EP20864989.7

申请日：2020-06-18

申请人： Hitachi, Ltd. ,  Toyo Tanso Co., Ltd.

发明人： KOBAYASHI, Keisuke ,  KONISHI. Kumiko ,  SHIMA, Akio ,  YABUKI, Norihito ,  SUDOH, Yusuke ,  NOGAMI, Satoru ,  KITABATAKE, Makoto

IPC分类号： H01L21/324 ,  H01L29/78 ,  H01L29/12 ,  H01L21/336

摘要： To provide a technique capable of improving performance and reliability of a semiconductor device. An n - -type epitaxial layer (12) is formed on an n-type semiconductor substrate (11), and a p + -type body region (14), n + -type current spreading regions (16, 17), and a trench TR are formed in the n - -type epitaxial layer (12). A bottom surface B1 of the trench TR is located in the p + -type body region (14), a side surface S1 of the trench TR is in contact with the n + -type current spreading region (17), and a side surface S2 of the trench TR is in contact with the n + -type current spreading region (16). Here, a ratio of silicon is higher than a ratio of carbon in an upper surface T1 of the r - -type epitaxial layer (12), and the bottom surface B1, the side surface S1, and the side surface S2 of the trench. Furthermore, an angle θ1 at which the upper surface T1 of the n - -type epitaxial layer (12) is inclined with respect to the side surface S1 is smaller than an angle θ2 at which the upper surface T1 of the n - -type epitaxial layer (12) is inclined with respect to the side surface S2.

公开(公告)号：EP3361496A1

公开(公告)日：2018-08-15

申请号：EP16853278.6

申请日：2016-10-06

申请人： Toyo Tanso Co., Ltd.

发明人： TORIMI, Satoshi ,  SHINOHARA, Masato ,  YABUKI, Norihito ,  NOGAMI, Satoru

IPC分类号： H01L21/3065 ,  H01L21/302 ,  H01L21/683

CPC分类号： H01L21/67115 ,  H01L21/0475 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/683 ,  H01L21/6875

摘要： A heat treatment container (1) is provided with support members (6) for supporting a disc-shaped SiC substrate (2), which is an object, at a time of an etching treatment of the SiC substrate (2). Each of the support members (6) has an inclined surface (6F) for supporting a lower surface end (2E) of the SiC substrate (2), the inclined surface being inclined so as to increasingly approach the centerline of the SiC substrate (2) going downward. More specifically, each of the support members (6) is formed in a conical shape with a diameter that increases going downward, and a conical surface which is the peripheral surface of each supporting member forms the inclined surface (6F). A vertically-middle section of the inclined surface (6F) contacts the lower surface end (2E) of the SiC substrate (2).

公开(公告)号：EP3128542A1

公开(公告)日：2017-02-08

申请号：EP15773355.1

申请日：2015-03-10

申请人： Toyo Tanso Co., Ltd.

发明人： TORIMI, Satoshi ,  YABUKI, Norihito ,  NOGAMI, Satoru

IPC分类号： H01L21/66

CPC分类号： H01L22/12 ,  H01L21/0201 ,  H01L21/02019 ,  H01L21/02024 ,  H01L21/0475 ,  H01L21/3065 ,  H01L29/1608

摘要： This method for estimating the depth of latent scratches in SiC substrates includes an etching step, a measurement step, and an estimation step. In the etching step, a SiC substrate in which at least the surface is formed from single crystal SiC, and which has been subjected to machining, is subjected to heat treatment under Si atmosphere to etch the surface of the SiC substrate. In the measurement step, the surface roughness or the residual stress of the SiC substrate which has been subjected to the etching step is measured. In the estimation step, the depth of latent scratches or the presence or absence of latent scratches in the SiC substrate before the etching step are estimated on the basis of the results obtained in the measurement step.

摘要翻译： 用于估计SiC衬底中的潜在划痕深度的方法包括蚀刻步骤，测量步骤和估计步骤。 在蚀刻工序中，在Si气氛下对SiC基板至少从单晶SiC形成并进行了加工的SiC基板进行了热处理，以蚀刻SiC基板的表面。 在测量步骤中，测量已经进行了蚀刻步骤的SiC衬底的表面粗糙度或残余应力。 在估计步骤中，基于在测量步骤中获得的结果来估计蚀刻步骤之前的潜在划痕深度或SiC衬底中潜在划痕的存在或不存在。

公开(公告)号：EP3854916A1

公开(公告)日：2021-07-28

申请号：EP19862939.6

申请日：2019-09-19

申请人： Toyo Tanso Co., Ltd.

发明人： YABUKI, Norihito ,  SAKAGUCHI, Takuya ,  JINNO, Akiko ,  NOGAMI, Satoru ,  KITABATAKE, Makoto

IPC分类号： C30B29/36 ,  C30B33/02 ,  H01L21/265 ,  H01L21/324

摘要： In a method for manufacturing a device fabrication wafer 43, an SiC epitaxial wafer 42 that is an SiC wafer 40 having a monocrystalline SiC epitaxial layer 41 formed thereon is subjected to a basal plane dislocation density reduction step of reducing the density of basal plane dislocations existing in the epitaxial layer of the SiC epitaxial wafer 42, to thereby manufacture the device fabrication wafer 43 for use to fabricate a semiconductor device. In the basal plane dislocation density reduction step, the SiC epitaxial wafer 42 is heated under Si vapor pressure for a predetermined time necessary to reduce the density of basal plane dislocations, without formation of a cap layer on the SiC epitaxial wafer 42, so that the density of basal plane dislocations is reduced with suppression of surface roughening.