公开(公告)号：EP3163641A4

公开(公告)日：2018-02-28

申请号：EP15811571

申请日：2015-06-11

申请人： ULVAC INC

发明人： HIROSE MITSUTAKA ,  KOBAYASHI HIROKI ,  HENMI MITSUNORI ,  TSUKAGOSHI KAZUYA ,  TSUYUKI TATSURO ,  KIMURA ISAMU ,  SUU KOUKOU

IPC分类号： H01L41/319 ,  C23C14/08 ,  C23C14/34 ,  H01L41/047 ,  H01L41/29 ,  H01L41/316

CPC分类号： H01L41/0477 ,  C23C14/08 ,  C23C14/088 ,  C23C14/165 ,  C23C14/34 ,  C23C14/3464 ,  H01L41/0815 ,  H01L41/29 ,  H01L41/316 ,  H01L41/319

摘要： The present invention provides a technology for preventing the generation of a pyrochlore phase, which is an impurity phase, in forming a PZT thin film by sputtering, without using a conventional seed layer. The present invention provides a PZT thin film laminate including: a Si substrate 10; a TiOx layer 4 serving as a platinum-adhesion layer on the Si substrate 10; a Pt electrode layer 5 on the TiOx layer 4; a Ti thin film layer 6 on the Pt electrode layer 5; and a PZT thin film layer 7 on the Ti thin film layer 6. The Ti thin film layer 6 can have a thickness of 1 nm or more and 10 nm or less.

公开(公告)号：EP3159949A4

公开(公告)日：2018-01-10

申请号：EP15810178

申请日：2015-06-11

申请人： ULVAC INC

发明人： KOBAYASHI HIROKI ,  HENMI MITSUNORI ,  HIROSE MITSUTAKA ,  TSUKAGOSHI KAZUYA ,  KIMURA ISAO ,  SUU KOUKOU

IPC分类号： H01L41/319 ,  B41J2/14 ,  C23C14/02 ,  C23C14/08 ,  C23C14/34 ,  C30B29/00 ,  H01L41/316

CPC分类号： H01L41/1876 ,  C01G25/00 ,  C01G25/02 ,  C01G53/00 ,  C01G53/04 ,  C23C14/024 ,  C23C14/025 ,  C23C14/08 ,  C23C14/088 ,  C23C14/14 ,  C23C14/3492 ,  C30B23/00 ,  C30B29/22 ,  C30B29/32 ,  H01L41/0477 ,  H01L41/316 ,  H01L41/319

摘要： A multi-layered film includes an electroconductive layer made of platinum (Pt), a seed layer including lanthanum (La), nickel (Ni), and oxygen (O), and a dielectric layer being preferentially oriented in a c-axis direction, which are at least sequentially disposed on a main surface of a substrate made of silicon.

公开(公告)号：EP3118347A4

公开(公告)日：2017-09-13

申请号：EP15761219

申请日：2015-03-03

申请人： ULVAC INC

发明人： KOBAYASHI HIROKI ,  HENMI MITSUNORI ,  HIROSE MITSUTAKA ,  TSUKAGOSHI KAZUYA ,  KIMURA ISAO ,  SUU KOUKOU

IPC分类号： C23C14/08 ,  C23C14/18 ,  C23C14/35 ,  H01L21/02 ,  H01L21/316 ,  H01L41/187 ,  H01L41/316 ,  H01L41/319

CPC分类号： H01L41/319 ,  C23C14/083 ,  C23C14/088 ,  C23C14/185 ,  C23C14/34 ,  C23C14/35 ,  H01L21/02197 ,  H01L21/02266 ,  H01L41/1876 ,  H01L41/316

公开(公告)号：EP3159428A4

公开(公告)日：2017-12-20

申请号：EP15809725

申请日：2015-06-11

申请人： ULVAC INC

发明人： KOBAYASHI HIROKI ,  HENMI MITSUNORI ,  HIROSE MITSUTAKA ,  TSUKAGOSHI KAZUYA ,  KIMURA ISAO ,  SUU KOUKOU

IPC分类号： C23C14/06 ,  C01G25/00 ,  C01G55/00 ,  C23C14/08 ,  C23C14/16 ,  C23C14/34 ,  C23C14/35 ,  C23C14/56 ,  C23C28/00 ,  H01L41/187 ,  H01L41/316 ,  H01L41/319

CPC分类号： H01L41/1876 ,  C01G25/00 ,  C01G55/00 ,  C01G55/002 ,  C01P2002/74 ,  C23C14/06 ,  C23C14/088 ,  C23C14/165 ,  C23C14/34 ,  C23C14/35 ,  C23C14/568 ,  C23C28/30 ,  C23C28/32 ,  C23C28/322 ,  C23C28/345 ,  C23C28/3455 ,  H01L41/316 ,  H01L41/319

摘要： A method of manufacturing a multi-layered film at least includes: a step A of forming an electroconductive layer on a substrate; a step B of forming a seed layer so as to coat the electroconductive layer; and a step C of forming a dielectric layer so as to coat the seed layer. In the step B, a compound including strontium (Sr), ruthenium (Ru), and oxygen (O) is formed as the seed layer by a sputtering method. In the step C, where a substrate temperature is defined by Td when the dielectric layer is formed, 560°C‰¤Td‰¤720°C is determined.

公开(公告)号：EP3163641A1

公开(公告)日：2017-05-03

申请号：EP15811571

申请日：2015-06-11

申请人： ULVAC INC

发明人： HIROSE MITSUTAKA ,  KOBAYASHI HIROKI ,  HENMI MITSUNORI ,  TSUKAGOSHI KAZUYA ,  TSUYUKI TATSURO ,  KIMURA ISAMU ,  SUU KOUKOU

IPC分类号： H01L41/319 ,  C23C14/08 ,  C23C14/34 ,  H01L41/047 ,  H01L41/29 ,  H01L41/316

CPC分类号： H01L41/0477 ,  C23C14/08 ,  C23C14/088 ,  C23C14/165 ,  C23C14/34 ,  C23C14/3464 ,  H01L41/0815 ,  H01L41/29 ,  H01L41/316 ,  H01L41/319

摘要： The present invention provides a technology for preventing the generation of a pyrochlore phase, which is an impurity phase, in forming a PZT thin film by sputtering, without using a conventional seed layer. The present invention provides a PZT thin film laminate including: a Si substrate 10; a TiOx layer 4 serving as a platinum-adhesion layer on the Si substrate 10; a Pt electrode layer 5 on the TiOx layer 4; a Ti thin film layer 6 on the Pt electrode layer 5; and a PZT thin film layer 7 on the Ti thin film layer 6. The Ti thin film layer 6 can have a thickness of 1 nm or more and 10 nm or less.

摘要翻译： 本发明提供了一种用于防止在不使用常规晶种层的情况下通过溅射形成PZT薄膜而形成作为杂质相的烧绿石相的技术。 本发明提供一种PZT薄膜层压体，其包括：Si衬底10; 在Si衬底10上用作铂 - 粘附层的TiOx层4; 在TiOx层4上的Pt电极层5; Pt电极层5上的Ti薄膜层6; 以及在Ti薄膜层6上的PZT薄膜层7.Ti薄膜层6可以具有1nm以上且10nm以下的厚度。