公开(公告)号：EP3163641A4

公开(公告)日：2018-02-28

申请号：EP15811571

申请日：2015-06-11

申请人： ULVAC INC

发明人： HIROSE MITSUTAKA ,  KOBAYASHI HIROKI ,  HENMI MITSUNORI ,  TSUKAGOSHI KAZUYA ,  TSUYUKI TATSURO ,  KIMURA ISAMU ,  SUU KOUKOU

IPC分类号： H01L41/319 ,  C23C14/08 ,  C23C14/34 ,  H01L41/047 ,  H01L41/29 ,  H01L41/316

CPC分类号： H01L41/0477 ,  C23C14/08 ,  C23C14/088 ,  C23C14/165 ,  C23C14/34 ,  C23C14/3464 ,  H01L41/0815 ,  H01L41/29 ,  H01L41/316 ,  H01L41/319

摘要： The present invention provides a technology for preventing the generation of a pyrochlore phase, which is an impurity phase, in forming a PZT thin film by sputtering, without using a conventional seed layer. The present invention provides a PZT thin film laminate including: a Si substrate 10; a TiOx layer 4 serving as a platinum-adhesion layer on the Si substrate 10; a Pt electrode layer 5 on the TiOx layer 4; a Ti thin film layer 6 on the Pt electrode layer 5; and a PZT thin film layer 7 on the Ti thin film layer 6. The Ti thin film layer 6 can have a thickness of 1 nm or more and 10 nm or less.

公开(公告)号：EP3159159A4

公开(公告)日：2018-01-17

申请号：EP15810304

申请日：2015-06-11

申请人： ULVAC INC

发明人： KOBAYASHI HIROKI ,  HENMI MITSUNORI ,  HIROSE MITSUTAKA ,  MASHIMA SHINNOSUKE ,  KIMURA ISAO ,  SUU KOUKOU

IPC分类号： B32B15/00 ,  B41J2/14 ,  C23C14/04 ,  C23C14/08 ,  C23C14/18 ,  C23C14/35 ,  C23C14/56 ,  C23C14/58 ,  H01L41/047 ,  H01L41/29 ,  H01L41/316

CPC分类号： H01L41/083 ,  B32B15/00 ,  B41J2/14 ,  C23C14/04 ,  C23C14/088 ,  C23C14/185 ,  C23C14/34 ,  C23C14/35 ,  C23C14/566 ,  C23C14/568 ,  C23C14/588 ,  H01L41/0471 ,  H01L41/0805 ,  H01L41/29 ,  H01L41/297 ,  H01L41/314 ,  H01L41/316

摘要： A multi-layered film includes a first electroconductive layer, a dielectric layer, and a second electroconductive layer, which are sequentially layered and disposed on a main surface of a substrate. A lower surface of the dielectric layer comes into contact with an upper surface of the first electroconductive layer, an upper surface and an side surface of the dielectric layer is coated with the second electroconductive layer, and an side end of a portion at which the first electroconductive layer directly overlaps the second electroconductive layer is located inside a side end of the substrate on the main surface of the substrate.

公开(公告)号：EP3159949A4

公开(公告)日：2018-01-10

申请号：EP15810178

申请日：2015-06-11

申请人： ULVAC INC

发明人： KOBAYASHI HIROKI ,  HENMI MITSUNORI ,  HIROSE MITSUTAKA ,  TSUKAGOSHI KAZUYA ,  KIMURA ISAO ,  SUU KOUKOU

IPC分类号： H01L41/319 ,  B41J2/14 ,  C23C14/02 ,  C23C14/08 ,  C23C14/34 ,  C30B29/00 ,  H01L41/316

CPC分类号： H01L41/1876 ,  C01G25/00 ,  C01G25/02 ,  C01G53/00 ,  C01G53/04 ,  C23C14/024 ,  C23C14/025 ,  C23C14/08 ,  C23C14/088 ,  C23C14/14 ,  C23C14/3492 ,  C30B23/00 ,  C30B29/22 ,  C30B29/32 ,  H01L41/0477 ,  H01L41/316 ,  H01L41/319

摘要： A multi-layered film includes an electroconductive layer made of platinum (Pt), a seed layer including lanthanum (La), nickel (Ni), and oxygen (O), and a dielectric layer being preferentially oriented in a c-axis direction, which are at least sequentially disposed on a main surface of a substrate made of silicon.

公开(公告)号：EP2626892A4

公开(公告)日：2017-01-04

申请号：EP11830638

申请日：2011-10-03

申请人： ULVAC INC

发明人： KIMURA ISAO ,  JINBO TAKEHITO ,  KOBAYASHI HIROKI ,  ENDOU YOUHEI ,  OONISHI YOUHEI

IPC分类号： H01L21/316 ,  C01G21/06 ,  C01G25/00 ,  C23C14/02 ,  C23C14/08 ,  C23C14/34 ,  C23C14/35 ,  H01J37/34 ,  H01L41/316

CPC分类号： C23C14/088 ,  C01G21/06 ,  C01G25/006 ,  C01P2002/72 ,  C01P2006/40 ,  C23C14/024 ,  C23C14/35 ,  H01J37/34 ,  H01J37/3426 ,  H01J37/3464 ,  H01L41/316

摘要： A method for forming a dielectric thin film that forms a PZT thin film having a (100) / (001) orientation. After a seed layer is formed by adhering PbO gas to a surface of a substrate, a voltage is applied to a target of lead zirconate titanate (PZT) and perform sputtering, while the substrate is heated inside of an evacuated vacuum chamber. Then, a PZT thin film is formed on the surface of the substrate. Because Pb and O are supplied from the seed layer, a PZT film having a (001) / (100) orientation can be formed without lack of Pb.

摘要翻译： 一种形成具有（100）/（001）取向的PZT薄膜的电介质薄膜的方法。 在通过将PbO气体附着到基板的表面上形成种子层之后，在真空室内部对基板进行加热的同时，向锆钛酸铅（PZT）的靶施加电压并进行溅射。 然后，在基板的表面上形成PZT薄膜。 由于Pb和O从种子层提供，所以可以形成具有（001）/（100）取向的PZT膜，而不含Pb。

公开(公告)号：EP3159428A4

公开(公告)日：2017-12-20

申请号：EP15809725

申请日：2015-06-11

申请人： ULVAC INC

发明人： KOBAYASHI HIROKI ,  HENMI MITSUNORI ,  HIROSE MITSUTAKA ,  TSUKAGOSHI KAZUYA ,  KIMURA ISAO ,  SUU KOUKOU

IPC分类号： C23C14/06 ,  C01G25/00 ,  C01G55/00 ,  C23C14/08 ,  C23C14/16 ,  C23C14/34 ,  C23C14/35 ,  C23C14/56 ,  C23C28/00 ,  H01L41/187 ,  H01L41/316 ,  H01L41/319

CPC分类号： H01L41/1876 ,  C01G25/00 ,  C01G55/00 ,  C01G55/002 ,  C01P2002/74 ,  C23C14/06 ,  C23C14/088 ,  C23C14/165 ,  C23C14/34 ,  C23C14/35 ,  C23C14/568 ,  C23C28/30 ,  C23C28/32 ,  C23C28/322 ,  C23C28/345 ,  C23C28/3455 ,  H01L41/316 ,  H01L41/319

摘要： A method of manufacturing a multi-layered film at least includes: a step A of forming an electroconductive layer on a substrate; a step B of forming a seed layer so as to coat the electroconductive layer; and a step C of forming a dielectric layer so as to coat the seed layer. In the step B, a compound including strontium (Sr), ruthenium (Ru), and oxygen (O) is formed as the seed layer by a sputtering method. In the step C, where a substrate temperature is defined by Td when the dielectric layer is formed, 560°C‰¤Td‰¤720°C is determined.

公开(公告)号：EP3163641A1

公开(公告)日：2017-05-03

申请号：EP15811571

申请日：2015-06-11

申请人： ULVAC INC

发明人： HIROSE MITSUTAKA ,  KOBAYASHI HIROKI ,  HENMI MITSUNORI ,  TSUKAGOSHI KAZUYA ,  TSUYUKI TATSURO ,  KIMURA ISAMU ,  SUU KOUKOU

IPC分类号： H01L41/319 ,  C23C14/08 ,  C23C14/34 ,  H01L41/047 ,  H01L41/29 ,  H01L41/316

CPC分类号： H01L41/0477 ,  C23C14/08 ,  C23C14/088 ,  C23C14/165 ,  C23C14/34 ,  C23C14/3464 ,  H01L41/0815 ,  H01L41/29 ,  H01L41/316 ,  H01L41/319

摘要： The present invention provides a technology for preventing the generation of a pyrochlore phase, which is an impurity phase, in forming a PZT thin film by sputtering, without using a conventional seed layer. The present invention provides a PZT thin film laminate including: a Si substrate 10; a TiOx layer 4 serving as a platinum-adhesion layer on the Si substrate 10; a Pt electrode layer 5 on the TiOx layer 4; a Ti thin film layer 6 on the Pt electrode layer 5; and a PZT thin film layer 7 on the Ti thin film layer 6. The Ti thin film layer 6 can have a thickness of 1 nm or more and 10 nm or less.

摘要翻译： 本发明提供了一种用于防止在不使用常规晶种层的情况下通过溅射形成PZT薄膜而形成作为杂质相的烧绿石相的技术。 本发明提供一种PZT薄膜层压体，其包括：Si衬底10; 在Si衬底10上用作铂 - 粘附层的TiOx层4; 在TiOx层4上的Pt电极层5; Pt电极层5上的Ti薄膜层6; 以及在Ti薄膜层6上的PZT薄膜层7.Ti薄膜层6可以具有1nm以上且10nm以下的厚度。

公开(公告)号：EP3118347A4

公开(公告)日：2017-09-13

申请号：EP15761219

申请日：2015-03-03

申请人： ULVAC INC

发明人： KOBAYASHI HIROKI ,  HENMI MITSUNORI ,  HIROSE MITSUTAKA ,  TSUKAGOSHI KAZUYA ,  KIMURA ISAO ,  SUU KOUKOU

IPC分类号： C23C14/08 ,  C23C14/18 ,  C23C14/35 ,  H01L21/02 ,  H01L21/316 ,  H01L41/187 ,  H01L41/316 ,  H01L41/319

CPC分类号： H01L41/319 ,  C23C14/083 ,  C23C14/088 ,  C23C14/185 ,  C23C14/34 ,  C23C14/35 ,  H01L21/02197 ,  H01L21/02266 ,  H01L41/1876 ,  H01L41/316

公开(公告)号：EP2626442A4

公开(公告)日：2017-01-04

申请号：EP11830637

申请日：2011-10-03

申请人： ULVAC INC

发明人： KIMURA ISAO ,  JINBO TAKEHITO ,  KOBAYASHI HIROKI ,  ENDOU YOUHEI ,  OONISHI YOUHEI

IPC分类号： C23C14/34 ,  C23C14/02 ,  C23C14/08 ,  C23C14/35 ,  C30B23/00 ,  C30B23/02 ,  C30B23/06 ,  C30B29/32

CPC分类号： C23C14/3464 ,  C23C14/024 ,  C23C14/088 ,  C23C14/35 ,  C30B23/002 ,  C30B23/025 ,  C30B23/063 ,  C30B29/32

摘要： A dielectric film forming apparatus and a method for forming a dielectric film so as to form a dielectric film with a (100) / (001) orientation. A dielectric film forming apparatus 10 includes a deposition preventive plate heating portion 19 that heats a deposition preventive plate 34 disposed in a position where particles discharged from a target 21 adhere. Sputtering gas is introduced from a sputtering gas introduction unit 14 into a vacuum chamber 11. The deposition preventive plate 34 is heated to a temperature higher than a film forming temperature so as to emit vapor from a thin film adhered to the deposition preventive plate 34. After a seed layer is formed on a substrate 31, the substrate 31 is heated to the film forming temperature, and AC voltage is applied to the target 21 from a power supply 13 and then, the target 21 is sputtered so as to form a dielectric film on the substrate 31.

摘要翻译： 一种电介质成膜装置和用于形成电介质膜，从而形成介电膜，具有（100）/（001）取向的方法。 一种电介质成膜装置10包括防附着板加热部19个加热做了防附着板34在从目标21附着排出颗粒的位置处。 溅射气体从溅射气体导入部14导入到真空室11的防附着板34被加热到比成形温度，以便从附着在防附着板34的薄膜发射蒸气的膜更高的温度下 一个籽晶层上的基板31形成之后，基板31被加热到成膜温度，和AC电压从电源13施加到目标21，然后，靶21被溅射，以便形成电介质 电影在基板31日