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25 条记录 (耗时 0.018 秒)

    Polymer and resist material
    3.
    发明公开
    Polymer and resist material 失效
    聚合物和抗蚀材料

    公开(公告)号：EP0789279A1

    公开(公告)日：1997-08-13

    申请号：EP96309141.8

    申请日：1996-12-13

    申请人： WAKO PURE CHEMICAL INDUSTRIES, LTD

    发明人： Urano, Fumiyoshi ,  Fujie, Hirotoshi ,  Oono, Keiji

    IPC分类号： G03F7/039 ,  G03F7/004 ,  C08F212/14 ,  C08F12/14 ,  C08F112/14

    CPC分类号： G03F7/039 ,  C08F212/14 ,  G03F7/0045 ,  Y10S430/106

    摘要： A polymer of polyhydroxystyrene derivative containing an acetal or ketal group which can easily be eliminated in the presence of an acid in the molecule and having a very narrow molecular weight distribution gives a resist material suitable for forming ultrafine patterns excellent in resolution, heat resistance, mask linearity, and other properties without causing problems of delay time and the like.

    摘要翻译： 含有缩醛或缩酮基团的聚羟基苯乙烯衍生物的聚合物，其可以在分子中存在酸并且分子量分布非常窄的情况下容易地除去，得到适合于形成分辨率，耐热性，掩模 线性等特性而不引起延迟时间等的问题。

    Resist composition
    6.
    发明公开
    Resist composition 审中-公开
    抵制构成

    公开(公告)号：EP1024406A1

    公开(公告)日：2000-08-02

    申请号：EP00300581.6

    申请日：2000-01-26

    申请人： WAKO PURE CHEMICAL INDUSTRIES, LTD ,  Sumitomo Chemical Company, Limited

    发明人： Urano, Fumiyoshi ,  Fujie, Hirotoshi ,  Takeyama, Naoki ,  Ichikawa, Koji

    IPC分类号： G03F7/039 ,  G03F7/004

    CPC分类号： G03F7/0045 ,  G03F7/039 ,  Y10S430/106

    摘要： A resist composition comprising (a) at least two kinds of polymers which become alkali-soluble by the action of an acid, (b) as a photoacid generator, a combination of an alkylsulfonyl diazomethane compound and a triarylsulfonium arylsulfonate compound or a diaryliodonium arylsulfonate compound, and (c) a solvent is excellent as a chemically amplified resist composition to give excellent pattern shape and very fine line-and-space, particularly when exposed to lights having a wavelength of 300 nm or less.

    摘要翻译： （a）至少两种通过酸的作用变成碱溶性的聚合物，（b）作为光酸产生剂，烷基磺酰基重氮甲烷化合物和三芳基锍芳基磺酸盐化合物或芳基磺酸二芳基碘盐化合物的组合 （c）作为化学放大型抗蚀剂组合物，作为具有优异的图案形状和非常微细的线条间隙的溶剂，特别是在曝光于300nm以下的光的情况下是优异的。

    Resist material and process for forming pattern using the same
    7.
    发明公开
    Resist material and process for forming pattern using the same 失效
    抗蚀剂材料和方法用于形成使用相同的图像。

    公开(公告)号：EP0476865A1

    公开(公告)日：1992-03-25

    申请号：EP91307908.3

    申请日：1991-08-29

    申请人： WAKO PURE CHEMICAL INDUSTRIES LTD

    发明人： Urano, Fumiyoshi ,  Nakahata, Masaaki ,  Fujie, Hirotoshi ,  Oono, Keiji

    IPC分类号： G03F7/039 ,  G03F7/075

    CPC分类号： C07C317/28 ,  C07C317/24 ,  C07C2601/14 ,  G03F7/039 ,  G03F7/0758

    摘要： A resist material of chemical amplified type comprising (a) a polymer such as a polymer of 1-methylcycloalkyl 4-ethenylphenoxyacetate and 4-hydroxystyrene, etc., (b) a photo-sensitive compound capable of generating an acid when exposed to light, and (c) a solvent for dissolving both the components (a) and (b) is excellent in heat resistance and adhesiveness to substrates, capable of maintaining stable pattern dimension from exposure to light to heat treatment, and capable of forming patterns using deep ultraviolet light, KrF excimer laser light, etc.

    摘要翻译： 化学的抗蚀剂材料放大型，其包含（a）聚合物：例如1- methylcycloalkyl的聚合物4- ethenylphenoxyacetate和4-羟基苯乙烯等，（b）能够在酸产生的光敏化合物当暴露于光时， 和（c）用于溶解的溶剂两种组分（a）和（b）具有优异的耐热性和密合性的底物，能够从曝光维持稳定的图案尺寸的光进行热处理，以及能够使用深紫形成图案的 光，KrF准分子激光等

    Sulfonium salt compounds
    9.
    发明公开
    Sulfonium salt compounds 有权
    锍化合物的盐

    公开(公告)号：EP1113005A1

    公开(公告)日：2001-07-04

    申请号：EP00127570.0

    申请日：2000-12-15

    申请人： Wako Pure Chemical Industries, Ltd.

    发明人： Oono, Keiji ,  Fukasawa, Kazuhito ,  Sakamoto, Kazunori ,  Urano, Fumiyoshi ,  Sumino, Motoshige ,  Imazeki, Shigeaki

    IPC分类号： C07C381/12 ,  G03F7/004

    CPC分类号： C07C381/12 ,  G03F7/0045 ,  G03F7/0382 ,  G03F7/0392 ,  Y10S430/106

    摘要： A triphenyl sulfonium salt compound shown by the general formula [1] or [3].
    (wherein R 1 and R 2 are each independently a hydrogen atom or a lower alkyl group, provided that at least one of R 1 and R 2 are a lower alkyl group, R 3 s are each independently an alkyl group, n is an integer of 0 to 3, i is an integer of 1 to 3, j is an integer of 0 to 2, provided that i+j=3, Y - is an anion derived from a sulfonic acid shown by the general formula [2]

            R 4 ―SO 3 H     [2]

    [wherein R 4 is an alkyl group or an aryl group which may have as a substituent an alkyl group]).
    (wherein X is a phenyl group which has a substituent at an ortho- and/or a meta-position, m is an integer of 1 to 3, q is an integer of 0 to 2, provided that m+q=3, p is 1 or 2 and Z p- is an anion derived from a carboxylic acid).