摘要:
A horizontal computation device includes a multi-ported random access memory in combination with independent pipelined memoryless function modules. The device is operative to implement a class of algorithms involving a high ratio of arithmetic computation to control complexity and good locality of data reference. The invention meets the criterion of a horizontal computation machine without undue complexity, that is, the invention provides a structure wherein a delay element capable of arbitrary delay can be allocated between every resource or function output and every resource or function input. The structure is a parallel input, parallel output random access memory having a plurality of dedicated serial buffered input ports and dedicated serial buffered output ports. The buffered ports are operative to provide transient storage in independent pipelines and parallel input and output to addressed locations of the random access memory. The invention also encompasses a program compilation technique and a multiple address bus primitive cell for a dynamic random access memory.
摘要:
A timing subsystem 10 including several test period generators for supplying a variety of timing signals to a device under test. Major, minor, and free-run period generators each supply various timing signals to a multiplexer 18, which selectively connects the timing signals to timing generators 20. A central processing unit 28 supplies data to the period generators and timing generators to define their respective timing signals. Timing signals generated by the major period generator 12 define the overall testing rate. The minor period generator 14 generates multiple timing signals within the periods of the major clock signals to permit higher clock rates. Timing signals that are independent of the major clock periods are generated by the free-run period generator 16. An external synchronizer circuit 26 provides a feedback loop from the device under test 22 to the major period generator. A reference driver trigger delay circuit 27 provides means for calibrating the timing generators. Each of the three period generators includes two interconnected timing interval generators 30 and 40 that alternately generate overlapping timing signals. Each timing interval generator includes a stop-restart oscillator 32, a counter 34, and a delay-line vernier 36. Upon the receipt of a start signal, the oscillator stops and restarts to align its clock pulses to the start signal. The oscillator output clocks the counter, which supplies a signal to the vernier when a preselected number is reached. The vernier delays the counter signal by a preselected delay and issus a signal that designates the end of the period.
摘要:
A self-aligned silicide base contact structure for a bipolar transistor, and a process for fabricating the structure are disclosed. The structure has four key elements: a base region 36, a polycrystalline silicon emitter contact region 50, a spacer oxide 60 and 62, and a base contact 74 formed of metal silicide. The spacer oxide is an insulator that electrically isolates the side walls of the emitter contact region from the upper surface of the base region. The spacer oxide is a residual amount of oxide that is left on the side walls of the emitter contact region after anisotropic etching is used to remove most of a covering layer of oxide. The metal silicide base contact is created on an exposed upper surface of the base region, and is formed by first depositing a metal layer on the upper surface of the base region, and then heat treating. Where metal and silicon atoms are in contact, such as along the exposed upper surface of the base region, metal silicide forms.
摘要:
A multiple phase-splitter TTL tristate output circuit having a feedback diode coupled between the signal output and the collector of a first phase-splitter transistor to accelerate sinking of current from the output to low potential during transition of binary signals at the output from high to low potential. An independent base drive is coupled to the base of the first phase-splitter transistor independent from any base drive coupled to the other phase-splitter transistor or transistors. Current hogging of the base drive current to the first phase-splitter transistor by the other phase-splitter transistors is thereby prevented. The first phase-splitter transistor which is coupled in the feedback circuit with the accelerating feedback diode to the base of the pulldown transistor element can therefore maintain the high current sinking mode through the pulldown transistor element with gain step-up proportional to β wnen the output is at the high voltage level.
摘要:
The tendency of a CMOS circuit to latch up is reduced by implanting ions of germanium or tin into the source and drain regions of the circuit. The low energy gap of these ions lowers the band gap of the source and drain regions, which in turn inhibits their ability to inject carriers into the substrate and well.