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公开(公告)号：EP1347937B1
公开(公告)日：2006-05-03
申请号：EP01990295.6
申请日：2001-12-13
Applicant: ROBERT BOSCH GMBH
Inventor： BENZEL, Hubert , WEBER, Heribert , ARTMANN, Hans , SCHAEFER, Frank
CPC classification number: B81C1/00182 , B81B2201/0264 , B81B2203/0127 , B81B2203/0315 , B81C2201/0114 , B81C2201/0115 , B81C2201/0178
Abstract: The invention relates to a micromechanical component comprising: a substrate (1); a monocrystalline layer (10), which is provided above the substrate (1) and which has a membrane region (10a); a cavity (50) that is provided underneath the membrane region (10a), and; one or more porous regions (150; 150'), which are provided inside the monocrystalline layer (10) and which have a doping (n ; p ) that is higher than that of the surrounding layer (10).
Abstract translation: 本发明涉及一种微机械部件，该微机械部件包括：衬底（1）; 设置在所述衬底（1）上方并且具有膜区域（10a）的单晶层（10）; 设置在膜区域（10a）下方的空腔（50），以及; 设置在单晶层（10）内并且具有比周围层（10）高的掺杂（n +; p +）的一个或多个多孔区域（150; 150'）， 。
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2.发明公开Structure, method of manufacturing the same and DNA separation device using the same 审中-公开结构，它们的制备和DNA-使用分离器的过程
公开(公告)号：EP1217366A3
公开(公告)日：2003-10-29
申请号：EP01124514.9
申请日：2001-10-12
Applicant: MITSUBISHI DENKI KABUSHIKI KAISHA
Inventor： Izuo, Shinichi , Ohji, Hiroshi , Tsutsumi, Kazuhiko
IPC: G01N27/447
CPC classification number: B81C1/00111 , B81B2201/0214 , B81C2201/0114 , B81C2201/0178 , G01N27/44791
Abstract: The invention relates to providing a columnar structure having a uniform shape and excellent heat resistance and mechanical strength that is formed on a substrate of silicon, a method of preparing the structure, and a DNA separation device prepared by the method. The structure has, on a substrate (11) made of silicon, columns (12) the main surface of which is covered with a thermally oxidized film (16). The columns (12) are made of the thermally oxidized film (16) only or of the thermally oxidized film (16) and silicon. The thermally oxidized film formed on the columns (12) is connected to those formed on the surface or inside of the substrate (11).
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3.发明公开
公开(公告)号：EP2456714A1
公开(公告)日：2012-05-30
申请号：EP10751817.7
申请日：2010-07-20
Applicant: Montres Breguet SA
Inventor： KARAPATIS, Nakis
IPC: B81C1/00
CPC classification number: B81C1/00682 , B81B2201/035 , B81C1/00674 , B81C2201/0178 , Y10T29/49986
Abstract: The invention relates to a method for manufacturing a micromechanical part made of reinforced silicon, comprising the steps of: micromachining the part, or a batch of parts, in a silicon wafer; forming, in one or more steps and over the entire surface of the part, a layer of silicon dioxide, so as to obtain a thickness of silicon dioxide that is at least five times greater than the thickness of native silicon dioxide; and removing the layer of silicon dioxide by chemical attack.
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4.发明公开Procede de fabrication d'une piece micromecanique en silicium renforce 审中-公开Verfahren zur Herstellung eines mikromechanischen Teils ausverstärktemSilizium
公开(公告)号：EP2277822A1
公开(公告)日：2011-01-26
申请号：EP09166269.2
申请日：2009-07-23
Applicant: MONTRES BREGUET S.A.
Inventor： Karapatis, Nakis
IPC: B81C1/00
CPC classification number: B81C1/00682 , B81B2201/035 , B81C1/00674 , B81C2201/0178 , Y10T29/49986
Abstract: Le procédé de fabrication d'une pièce micromécanique en silicium renforcé comporte les étapes de :
- micro-usiner la pièce, ou un lot de pièces dans une plaquette de silicium ;
- former, sur toute la surface de la pièce, en une ou plusieurs étapes, une couche de dioxyde de silicium, de manière à obtenir une épaisseur de dioxyde de silicium au moins cinq fois supérieure à l'épaisseur d'un dioxyde de silicium natif ;
- retirer la couche de dioxyde de silicium par attaque chimique.Abstract translation: 该方法包括用硅芯（1）或硅晶片中的一批部件微加工微机械部件。 在900〜1200摄氏度的温度范围内，在一个步骤或不同步骤中，在表面的整个表面上形成二氧化硅层，以获得二氧化硅的厚度比二氧化硅厚度高五倍 天然二氧化硅的厚度。 该层被化学侵蚀除去。 在表面上形成具有高于晶体硅的摩擦学特性的材料中的涂层。
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5.发明公开VERFAHREN ZUM ERZEUGEN VON OPTISCH TRANSPARENTEN BEREICHEN IN EINEM SILIZIUMSUBSTRAT 有权一种用于在硅衬底的制造光学透明区域的方法
公开(公告)号：EP1390988A2
公开(公告)日：2004-02-25
申请号：EP02727197.2
申请日：2002-03-05
Applicant: ROBERT BOSCH GMBH
Inventor： BENZEL, Hubert , WEBER, Heribert , ARTMANN, Hans , SCHAEFER, Frank
IPC: H01L31/18 , H01L31/028 , B28B1/00
CPC classification number: B81B3/0083 , B81B2203/0315 , B81C2201/0114 , B81C2201/0115 , B81C2201/0178 , C25F3/12 , C25F3/14 , H01L21/306 , H01L21/3081
Abstract: The invention relates to a simple and cost-effective method for producing optically transparent regions (5, 6) in a silicon substrate (1) with which the optically transparent regions can be realized with any thickness and can be provided above a cavity located in the silicon substrate. To this end, at least one defined region (5, 6) of the silicon substrate (1) is firstly etched whereby rendering it porous. Afterwards, the defined porous region (5, 6) of the silicon substrate (1) is oxidized.
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Patent Agency Ranking6.发明公开Forming a silicon diaphragm in a cavity by anodizing, oxidizing, and etching or by directly etching the porous silicon 失效通过阳极氧化处理，氧化，和蚀刻或通过多孔硅的直接蚀刻在空腔形成硅膜
公开(公告)号：EP0747686A1
公开(公告)日：1996-12-11
申请号：EP96401129.0
申请日：1996-05-24
Applicant: SSI TECHNOLOGIES, INC.
Inventor： Seefeldt, James D. , Mattes, Michael F.
CPC classification number: B81C1/00158 , B81B2203/0315 , B81C2201/0115 , B81C2201/0178 , G01L9/0042 , G01L9/0055 , G01P15/0802 , G01P15/123 , Y10S438/96
Abstract: Method of forming a diaphragm (11) supported in a cavity (22), comprising the steps of:
a. implant in a substrate (8) a p-type layer (50);
b. deposit an n-type epitaxial layer (18) on the substrate (8);
c. implant spaced sinkers (58) through the epitaxial layer (18) and into electrical connection with the layer (50);
d. anodize the substrate (8) to form porous silicon of the sinkers (58) and said layer (50);
e. oxidize the porous silicon to form silicon dioxide ; and
f. etch the silicon dioxide to form the cavity (22) and diaphragm (11). A direct etching of porous silicon is also proposed.Abstract translation: 形成包括以下步骤中的腔体（22）支撑的隔膜（11）的方法，包括：一个。 在衬底中注入层（8）的p型（50）; 湾 在n型外延层（18）的存款衬底（8）; 温度。 植入物隔开沉降片（58）穿过所述外延层（18）和与所述层（50）电连接; 天。 阳极氧化基片（8），以形成沉降片的多孔硅（58）和所述层（50）; 即 氧化多孔硅以形成二氧化硅; 和f。 蚀刻二氧化硅以形成空腔（22）和隔膜（11）。 因此多孔硅的直接蚀刻提议。
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7.发明授权
公开(公告)号：EP2456714B1
公开(公告)日：2015-03-18
申请号：EP10751817.7
申请日：2010-07-20
Applicant: Montres Breguet SA
Inventor： KARAPATIS, Nakis
IPC: B81C1/00
CPC classification number: B81C1/00682 , B81B2201/035 , B81C1/00674 , B81C2201/0178 , Y10T29/49986
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公开(公告)号：EP2001062A4
公开(公告)日：2012-03-28
申请号：EP07740161
申请日：2007-03-28
Applicant: KOBE STEEL LTD
Inventor： HIRANO TAKAYUKI , KAWAKAMI NOBUYUKI , KANNAKA MASATO
CPC classification number: G01F1/692 , B81B2201/0278 , B81B2203/0127 , B81C1/00666 , B81C2201/0169 , B81C2201/0178 , C23C16/402 , C23C16/56 , Y10T428/24488 , Y10T428/24612
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公开(公告)号：EP1716070A1
公开(公告)日：2006-11-02
申请号：EP04802963.1
申请日：2004-12-20
Applicant: Robert Bosch GmbH
Inventor： BAER, Hans-Peter , HOECHST, Arnim
IPC: B81B3/00
CPC classification number: B81C1/00182 , B81B2201/0292 , B81B2203/0127 , B81B2203/0315 , B81B2203/0353 , B81C2201/0178
Abstract: The invention concerns a micromechanical sensor and a method for the production thereof. According to the invention, the diaphragm can be reliably mounted regardless of process-related vibrations of the cavern etching process and the diaphragm can be provided in any shape due to the fact that a suitable binding of the diaphragm in an oxide layer produced by local oxidation is formed. The micromechanical sensor comprises: at least one substrate (1); an outer oxide layer (9) formed in a laterally outer region (4) in the substrate (1); a diaphragm (15) formed in a laterally inner diaphragm region (5) and having a number of perforations (16), and; a cavern (14) etched into the substrate (1) underneath the diaphragm (15), said diaphragm (15) being suspended in a suspending region (10) of the outer oxide layer (9), this region tapering toward the binding points (12) of the diaphragm (15), and the diaphragm (15) is, in the vertical height thereof, placed between a top side (17) and an underside (19) of the outer oxide layer (9).
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10.发明授权Verfahren zum Erzeugen von optisch transparenten Bereichen in einem Siliziumsubstrat 有权一种用于在硅衬底的制造光学透明区域的方法
公开(公告)号：EP1390988B1
公开(公告)日：2006-07-26
申请号：EP02727197.2
申请日：2002-03-05
Applicant: ROBERT BOSCH GMBH
Inventor： BENZEL, Hubert , WEBER, Heribert , ARTMANN, Hans , SCHAEFER, Frank
IPC: H01L31/18 , H01L31/028 , B28B1/00
CPC classification number: B81B3/0083 , B81B2203/0315 , B81C2201/0114 , B81C2201/0115 , B81C2201/0178 , C25F3/12 , C25F3/14 , H01L21/306 , H01L21/3081
Abstract: The invention relates to a simple and cost-effective method for producing optically transparent regions (5, 6) in a silicon substrate (1) with which the optically transparent regions can be realized with any thickness and can be provided above a cavity located in the silicon substrate. To this end, at least one defined region (5, 6) of the silicon substrate (1) is firstly etched whereby rendering it porous. Afterwards, the defined porous region (5, 6) of the silicon substrate (1) is oxidized.
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