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    WAFER PROCESSING LAMINATE, TEMPORARY ADHESIVE MATERIAL FOR WAFER PROCESSING, AND METHOD FOR MANUFACTURING THIN WAFER
    4.
    发明公开
    WAFER PROCESSING LAMINATE, TEMPORARY ADHESIVE MATERIAL FOR WAFER PROCESSING, AND METHOD FOR MANUFACTURING THIN WAFER 审中-公开
    晶圆加工层压板，临时键合材料晶圆加工和生产薄晶圆的方法

    公开(公告)号：EP3159924A1

    公开(公告)日：2017-04-26

    申请号：EP16002215.8

    申请日：2016-10-14

    申请人： Shin-Etsu Chemical Co., Ltd.

    发明人： TAGAMI, Shohei ,  SUGO, Michihiro ,  YASUDA, Hiroyuki ,  TANABE, Masahito

    IPC分类号： H01L21/683

    CPC分类号： H01L21/6836 ,  B32B7/06 ,  B32B7/12 ,  B32B27/283 ,  C08G77/04 ,  C08G77/06 ,  C09J5/06 ,  C09J7/22 ,  C09J7/35 ,  C09J183/04 ,  C09J2201/36 ,  C09J2203/326 ,  C09J2205/302 ,  H01L21/304 ,  H01L21/6835 ,  H01L24/14 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68381 ,  H01L2221/68386 ,  H01L2224/13147 ,  H01L2924/01029

    摘要： The present invention is a wafer processing laminate including a support (3), a temporary adhesive material layer (2) formed on the support, and a wafer (1) stacked on the temporary adhesive material layer, the wafer having a front surface on which a circuit is formed and a back surface to be processed, wherein the temporary adhesive material layer comprises a three-layered complex temporary adhesive material layer that includes a first temporary adhesive layer composed of a thermoplastic organopolysiloxane polymer layer (A) having a thickness of less than 100 nm and releasably laminated to the front surface of the wafer, a second temporary adhesive layer composed of a thermosetting siloxane-modified polymer layer (B) releasably laminated to the first temporary adhesive layer, and a third temporary adhesive layer composed of a thermoplastic organopolysiloxane polymer layer (A') having a thickness of less than 100 nm, releasably laminated to the second temporary adhesive layer, and releasably laminated to the support. This wafer processing laminate can withstand a thermal process at a high temperature exceeding 300°C, and can increase productivity of thin wafers.

    摘要翻译： 本发明是一个晶片处理层压材料包括：（3），一个临时粘合材料层（2）在载体上形成的支撑件，和一个晶片（1）堆叠在临时粘结材料层上，具有在其上的前表面的晶片 的电路形成，并且待处理的背表面，worin临时粘合剂材料层包括三层复合临时粘接材料层做包括具有厚度的更小的热塑性的有机聚硅氧烷聚合物层（A）构成的第一临时粘合剂层 大于100nm和自由剥离地层积到热塑性构成的晶片，剥离地层积于所述第一临时粘合剂层的热固性硅氧烷改性的聚合物层（B）构成的第二临时粘合剂层，以及第三临时粘合剂层的前表面 有机聚硅氧烷聚合物层（A“）的厚度为小于100纳米，自由剥离地层积于第二临时粘合剂层，和RELE asably层压到载体上。 此晶片处理层压板可在高温下超过300℃经受热过程，并能增加薄晶片的生产率。

    TEMPORARY ADHESION METHOD AND METHOD FOR PRODUCING THIN WAFER
    5.
    发明公开
    TEMPORARY ADHESION METHOD AND METHOD FOR PRODUCING THIN WAFER 审中-公开
    方法临时固定和生产薄晶圆的方法

    公开(公告)号：EP3154080A1

    公开(公告)日：2017-04-12

    申请号：EP16002077.2

    申请日：2016-09-26

    申请人： Shin-Etsu Chemical Co., Ltd.

    发明人： YASUDA, Hiroyuki ,  SUGO, Michihiro ,  TANABE, Masahito

    IPC分类号： H01L21/683

    CPC分类号： C09J7/24 ,  C09J5/00 ,  C09J5/06 ,  C09J7/22 ,  C09J7/243 ,  C09J7/35 ,  C09J125/06 ,  C09J163/00 ,  C09J183/00 ,  C09J183/04 ,  C09J2203/326 ,  C09J2205/114 ,  C09J2205/302 ,  C09J2423/041 ,  C09J2483/00 ,  H01L21/02057 ,  H01L21/304 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/76898 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68381

    摘要： The present invention is a temporary adhesion method for temporarily bonding a support (3) and a wafer (1) via a temporary adhesive material (2), including attaching the wafer to the support via the temporary adhesive material including a complex temporary adhesive material layer that consists of a thermoplastic resin layer (A) exhibiting a storage modulus E' of 1 to 500 MPa and a tensile rupture strength of 5 to 50 MPa at 25°C and a thermosetting polymer layer (B) exhibiting a storage modulus E' of 1 to 1000 MPa and a tensile rupture strength of 1 to 50 MPa at 25°C after curing, wherein the attaching is performed by forming the layer (A) on the front surface of the wafer from a liquid composition (A'), forming the layer (B) on the support by laminating a film resin (B'), and then heating the wafer and the support under reduced pressure, or forming the layer (A) on the front surface of the wafer from the liquid composition (A'), forming the layer (B) on the layer (A) by laminating the film resin (B'), and then heating the wafer and the support under reduced pressure, and heat curing the layer (B). This temporary adhesion method facilitates temporary adhesion and separation and can increase productivity of thin wafers.

    摘要翻译： 本发明是一个临时附着法用于暂时接合的支撑件（3）和通过（2）包括经由包括复杂的临时粘接材料层的临时粘合剂材料的晶片粘贴到支撑临时粘合剂材料的晶片（1） 其由参展的储能模量E“为1至500MPa的表现出储能模量E和为5的拉伸断裂强度为50MPa，在25℃和热固性聚合物层（B）”的热塑性树脂层（A）的 1至1000兆帕，在25℃下固化后的1至50MPa的拉伸断裂强度，worin的安装是通过从液体组合物（A“）形成在晶片的前表面上的层（A）中进行，形成 在载体上的层（B）通过层叠薄膜树脂（B“），然后加热晶片并在减压下支承，或者从液体组合物形成在晶片的前表面上的层（A）（A 所述层（A）层叠第“）上形成层（B）， e动画树脂（B“），然后加热晶片并在减压下支持，和热固化该层（B）。 此临时粘合方法便于临时粘合和分离，并且可以提高薄晶片的生产率。