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公开(公告)号：EP2592643A1
公开(公告)日：2013-05-15
申请号：EP11803566.6
申请日：2011-07-05
IPC分类号： H01J37/317 , G01N1/28
CPC分类号： C23F4/02 , G01N1/32 , G01N23/225 , H01J37/08 , H01J37/244 , H01J37/3002 , H01J37/3056 , H01J2237/31745
摘要： Provided is a technique capable of removing a damaged layer of a sample piece generated through an FIB fabrication sufficiently but at the minimum. A charged particle beam device includes a first element ion beam optical system unit (110) which performs a first FIB fabrication to form a sample piece from a sample, a second element ion beam optical system unit (120) which performs a second FIB fabrication to remove a damaged layer formed on a surface of the sample piece, and a first element detector (140) which detects an first element existing in the damaged layer. A termination of the second FIB fabrication is determined if an amount of the first element existing in the damaged layer becomes smaller than a predefined threshold value.
摘要翻译： 提供了一种技术，其能够通过充分但至少除去通过FIB制造产生的样品片的损伤层。 带电粒子束装置包括：第一元件离子束光学系统单元（110），其执行第一FIB制造以从样品形成样品片;第二元件离子束光学系统单元（120），其执行第二FIB制造 去除形成在样品表面上的损伤层，以及检测存在于损伤层中的第一元素的第一元件检测器（140）。 如果存在于受损层中的第一元素的量变得小于预定阈值，则确定第二FIB制造的终止。
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2.发明公开WALZPRODUKT, VERFAHREN UND VORRICHTUNG ZU DESSEN HERSTELLUNG SOWIE VERWENDUNG DES WALZPRODUKTES 审中-公开轧制产品，其产品工艺和生产及滚动装置的用途
公开(公告)号：EP1610913A1
公开(公告)日：2006-01-04
申请号：EP04722255.9
申请日：2004-03-22
发明人： WAGNER, Helmut , FUCHS, Roman , RÖHRER, Thomas
IPC分类号： B21B1/22
CPC分类号： C25D11/02 , B21B1/227 , B21B27/005 , B21B45/0269 , B21B2001/383 , B21B2003/001 , B21B2265/20 , C23F4/00 , C23F4/02 , C25D11/005 , C25D11/04 , F21V7/10 , F21V7/22
摘要： A rolled product, especially a rolled product consisting of a metallic material, such as an aluminium sheet, for using in lighting engineering as a reflector surface, the surfaces on both sides of the rolled product displaying essentially the same reflective properties. One such rolled product is especially suitable as a material for constructing a reflector or for the anti-glare shade of a louvered light fitting. The rolled product is produced by first rolling the product and then providing the two optionally differently reflecting surfaces with similar reflective properties by a polishing process following the rolling.
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公开(公告)号：EP0436812A1
公开(公告)日：1991-07-17
申请号：EP90122376.8
申请日：1990-11-23
发明人： Douglas, Monte A.
IPC分类号： C23F4/02
摘要： An etch process for etching copper layers (10,11) that is useable in integrated circuit fabrication is disclosed which utilizes organic and amine radicals (R) to react with copper (10,11), preferrable using photoenergizing and photodirecting assistance of high intensity ultraviolet light (5), to produce a product which is either volatile or easily removed in solution. The process is anisotropic.
摘要翻译： 用于蚀刻的铜层的蚀刻工艺（10,11）确实是在集成电路制造时可用游离缺失光盘，其利用有机胺和自由基（R）与铜（10,11）preferrable使用photoenergizing和高强度紫外线的photodirecting援助反应 光（5），以产生产物，其是易失性或在溶液中容易地除去。 该过程是各向异性的。
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公开(公告)号：EP0149779A2
公开(公告)日：1985-07-31
申请号：EP84115012.1
申请日：1984-12-11
摘要： Disclosed is a method of etching a metallized substrate by excimer laser radiation. The substrate is exposed to a selected gas, e.g., a halogen gas, which spontaneously reacts with the metal forming a solid reaction product layer on the metal by a partial consumption of the metal. A beam of radiation from an excimer laser, e.g. XeF laser operating at a wavelength of 351 nm or XeCl laser at 308 nm or KrF laser at 248 nm or KrCi laser at 222 nm or ArF laser at 193 nm or F 2 laser at 157 nm, is applied to the reaction product in a desired pattern to vaporize the reaction product and thereby selectively etch the metal with a high resolution.
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公开(公告)号：EP2575158B1
公开(公告)日：2015-04-22
申请号：EP12798587.7
申请日：2012-06-13
发明人： LIU, Huarong
CPC分类号： C23F4/02 , B82Y99/00 , H01J1/00 , H01J1/3044 , H01J9/025 , H01J27/26 , H01J37/04 , H01J37/06 , H01J37/073 , H01J37/08 , H01J2201/30415 , H01J2237/0807
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公开(公告)号：EP2592643A4
公开(公告)日：2014-12-31
申请号：EP11803566
申请日：2011-07-05
IPC分类号： H01J37/30 , G01N1/32 , H01J37/305 , H01J37/317
CPC分类号： C23F4/02 , G01N1/32 , H01J37/3002 , H01J37/3056 , H01J2237/31745
摘要： Provided is a technique capable of removing a damaged layer of a sample piece generated through an FIB fabrication sufficiently but at the minimum. A charged particle beam device includes a first element ion beam optical system unit (110) which performs a first FIB fabrication to form a sample piece from a sample, a second element ion beam optical system unit (120) which performs a second FIB fabrication to remove a damaged layer formed on a surface of the sample piece, and a first element detector (140) which detects an first element existing in the damaged layer. A termination of the second FIB fabrication is determined if an amount of the first element existing in the damaged layer becomes smaller than a predefined threshold value.
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7.发明授权Method of beam-induced selective etching of a material from a quartz substrate 有权用于从石英衬底选择性地蚀刻的材料辐射诱导方法
公开(公告)号：EP1710327B1
公开(公告)日：2012-07-18
申请号：EP06112344.4
申请日：2006-04-07
IPC分类号： G03F1/00 , H01J37/305 , C23F4/00 , C23F4/02
CPC分类号： C23F4/00 , C23F4/02 , G03F1/72 , G03F1/74 , H01J2237/31744
摘要： A method and apparatus for local beam processing using a beam activated gas to etch material are described. Compounds are disclosed that are suitable for beam-induced etching. The invention is particularly suitable for electron beam induced etching of chromium materials on lithography masks. In one embodiment, a polar compound, such as CINO 2 gas, is activated by the electron beam to selectively etch a chromium material on a quartz substrate. By using an electron beam in place of an ion beam, many problems associated with ion beam mask repair, such as staining and riverbedding, are eliminated. Endpoint detection is not critical because the electron beam and gas will not etch significantly the substrate.
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8.发明公开
公开(公告)号：EP0493122A3
公开(公告)日：1993-04-14
申请号：EP91312040.8
申请日：1991-12-24
发明人： Yokoyama, Yoshiaki
摘要： A method for recovering substance such as zincing or the like adhered to the surface of an object to be processed, by causing such materials to be evaporated in a vacuum. In this method, the object to the processed is placed in a furnace provided with heating means; the temperature within the furnace is elevated up to a predetermined level with the aid of an oxidizing gas atmosphere; the pressure in the furnace is reduced so that the quantity of the oxidizing gas is reduced to be below the explosion limit; and a reducing gas atmosphere is fed into the furnace to reduce the oxidization of the object to be processed. Thereafter, the interior of the furnace is evacuated while being maintained under a predetermined evaporation temperature condition; and the substance evaporated from the object to be processed is passed to recovery means provided in communication with the furnace, so that the substance thus evaporated is condensed in the recovery means and recovered therefrom.
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公开(公告)号：EP0149779A3
公开(公告)日：1986-08-13
申请号：EP84115012
申请日：1984-12-11
摘要： Disclosed is a method of etching a metallized substrate by excimer laser radiation. The substrate is exposed to a selected gas, e.g., a halogen gas, which spontaneously reacts with the metal forming a solid reaction product layer on the metal by a partial consumption of the metal. A beam of radiation from an excimer laser, e.g. XeF laser operating at a wavelength of 351 nm or XeCl laser at 308 nm or KrF laser at 248 nm or KrCi laser at 222 nm or ArF laser at 193 nm or F 2 laser at 157 nm, is applied to the reaction product in a desired pattern to vaporize the reaction product and thereby selectively etch the metal with a high resolution.
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公开(公告)号：EP0150358A2
公开(公告)日：1985-08-07
申请号：EP84115011.3
申请日：1984-12-11
摘要： Disclosed is a method of etching a metallized substrate by laser radiation. The substrate is exposed to a selected gas which spontaneously reacts with the metal forming a solid reaction product with the metal by a partial consumption of the metal. A beam of radiation of a wavelength suitable for absorption by the reaction product and/or by the metal thereunder is applied in a desired pattern to vaporize the reaction product and thereby selectively etch the metal.
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