中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

117 records (took 0.015 seconds)

    IONIZATION OF ANALYTE MOLECULES COMPRISED IN A FLOW OF GAS
    4.
    发明公开
    IONIZATION OF ANALYTE MOLECULES COMPRISED IN A FLOW OF GAS 审中-公开
    分析物的电离气体流

    公开(公告)号：EP2815420A1

    公开(公告)日：2014-12-24

    申请号：EP13748840.9

    申请日：2013-01-30

    Applicant: Waters Technologies Corporation

    Inventor： STEVENS, Douglas, M.

    IPC: H01J49/00

    CPC classification number: G01N30/84 ,  G01N30/7206 ,  G01N2030/8447 ,  H01J27/26 ,  H01J49/0422 ,  H01J49/0468 ,  H01J49/145 ,  H01J49/165

    Abstract: An apparatus for ionizing analyte molecules comprised in a flow of a first gas. The apparatus includes an inlet tube through which the first gas may be discharged into an ionization region. The apparatus also includes a nozzle electrode disposed around the inlet tube to define a substantially annular space between the exterior of the inlet tube and the interior of the nozzle electrode. The sheath tube includes an inlet for introducing a fluid into the substantially annular space and an outlet through which the fluid may be discharged into the ionization region. The apparatus is configured to ionize the analyte molecules optionally via electrospray or chemical ionization.

    PARTICLE SOURCE AND MANUFACTURING METHOD THEREOF
    5.
    发明公开
    PARTICLE SOURCE AND MANUFACTURING METHOD THEREOF 有权
    PARTIKELQUELLE UND HERSTELLUNGSVERFAHRENDAFÜR

    公开(公告)号：EP2629316A1

    公开(公告)日：2013-08-21

    申请号：EP12721399.9

    申请日：2012-05-04

    Applicant: 38th Research Institute, China Electronics Technology Group Corporation

    Inventor： LIU, Huarong ,  CHEN, Ping

    IPC: H01J37/04

    CPC classification number: H01J37/04 ,  B82Y40/00 ,  H01J9/02 ,  H01J9/025 ,  H01J27/26 ,  H01J37/073 ,  H01J37/08 ,  H01J2237/06341 ,  H01J2237/0807 ,  H01J2237/2623 ,  H01L21/31116

    Abstract: The present disclosure provides a method for manufacturing a particle source comprising: placing a metal wire in vacuum, introducing active gas, adjusting a temperature of the metal wire and applying a positive high voltage V to the metal wire to generate at a side of the head of the metal wire an etching zone in which field induced chemical etching (FICE) is performed; increasing by the FICE a surface electric field at the top of the metal wire head to be greater than a field evaporation electric field of material for the metal wire, so that metal atoms at the top of the metal wire are evaporated off; after the field evaporation is activated by the FICE, causing mutual adjustment between the FICE and the field evaporation, until the head of the metal wire has a shape of combination of a base and a tip on the base; and stopping the FICE and the field evaporation when the head of the metal wire takes a predetermine shape.

    Abstract translation: 本公开提供了一种制造颗粒源的方法，包括：将金属丝放置在真空中，引入活性气体，调节金属丝的温度并向金属丝施加正高电压V以在头的一侧产生 的金属线，其中执行场诱导化学蚀刻（FICE）的蚀刻区域; 通过FICE增加金属丝头顶部的表面电场比金属线材料的场蒸发电场大，金属线顶部的金属原子被蒸发掉; 在通过FICE激活场蒸发之后，引起FICE和场蒸发之间的相互调节，直到金属丝的头部具有基部和底部的尖端的组合的形状; 并且当金属丝的头部具有预定的形状时，停止FICE和场蒸发。

    PARTICLE SOURCE AND MANUFACTURING METHOD THEREFOR
    6.
    发明公开
    PARTICLE SOURCE AND MANUFACTURING METHOD THEREFOR 有权
    Verfahren zum Herstellen einer Teilchenquelle

    公开(公告)号：EP2575158A1

    公开(公告)日：2013-04-03

    申请号：EP12798587.7

    申请日：2012-06-13

    Applicant: 38th Research Institute, China Electronics Technology Group Corporation

    Inventor： LIU, Huarong

    IPC: H01J37/04

    CPC classification number: C23F4/02 ,  B82Y99/00 ,  H01J1/00 ,  H01J1/3044 ,  H01J9/025 ,  H01J27/26 ,  H01J37/04 ,  H01J37/06 ,  H01J37/073 ,  H01J37/08 ,  H01J2201/30415 ,  H01J2237/0807

    Abstract: The present disclosure provides a method for manufacturing a particle source, comprising: placing a metal wire in vacuum, introducing active gas and catalyst gas, adjusting a temperature of the metal wire, and applying a positive high voltage V to the metal wire to dissociate the active gas at the surface of the metal wire, in order to generate at a peripheral surface of the head of the metal wire an etching zone in which field induced chemical etching (FICE) is performed; increasing by the FICE a surface electric field at the apex of the metal wire head to be greater than the evaporation field of the material for the metal wire, so that metal atoms at the wire apex are evaporated off; after the field evaporation is activated by the FICE, causing mutual adjustment between the FICE and the field evaporation, until the head of the metal wire has a shape of combination of a base and a tip on the base, wherein the FICE occurs at the lateral side of the metal wire head to form the base, and the field evaporation occurs at the apex of the metal wire head to form the tip; and stopping the FICE and the field evaporation when the head of the metal wire takes a predetermine shape.

    Abstract translation: 本公开内容提供了一种制造颗粒源的方法，包括：将金属线放置在真空中，引入活性气体和催化剂气体，调节金属丝的温度，以及向金属丝施加正高电压V以使 在金属线的表面处的活性气体，以在金属线的头部的外周表面处产生进行场诱导化学蚀刻（FICE）的蚀刻区域; 通过FICE增加金属丝头顶点处的表面电场，使其大于金属线材料的蒸发场，使金属丝顶端的金属原子蒸发掉; 在通过FICE激活场蒸发之后，引起FICE和场蒸发之间的相互调节，直到金属丝的头部具有基部和底部的尖端的组合的形状，其中FICE出现在侧面 金属丝头的一侧形成基部，并且在金属丝头的顶点处发生场蒸发以形成尖端; 并且当金属丝的头部具有预定的形状时，停止FICE和场蒸发。

    DISPOSITIF DE GÉNÉRATION D'UN FAISCEAU D'IONS AVEC PIÈGE CRYOGÉNIQUE
    8.
    发明公开
    DISPOSITIF DE GÉNÉRATION D'UN FAISCEAU D'IONS AVEC PIÈGE CRYOGÉNIQUE 有权
    EINRICHTUNG ZUR ERZEUGUNG EINES IONENSTRAHLS MIT CRYOGENFALLE

    公开(公告)号：EP2342733A1

    公开(公告)日：2011-07-13

    申请号：EP09749165.8

    申请日：2009-09-14

    Applicant: Centre National de la Recherche Scientifique - CNRS ,  Raith GmbH

    Inventor： GIERAK, Jacques ,  JEDE, Ralf

    IPC: H01J27/26 ,  H01J37/08 ,  B01D8/00

    CPC classification number: H01J27/26 ,  H01J37/08

    Abstract: This device (2) for generating an ion beam (4), which includes a liquid metal ion source (18), is characterized in that the ion source is surrounded by a cryogenic trap (28) maintained at a low temperature, this cryogenic trap being capable of trapping volatile chemical species (G) by condensing them before they can reach the ion source.

    Abstract translation: 用于产生包括液体金属离子源（18）的离子束（4）的该装置（2）的特征在于，离子源被保持在低温的低温阱（28）包围，该低温阱能够 挥发性化学物质（G）通过在它们到达离子源之前冷凝来捕获。

Patent Agency Ranking