摘要:
A vapor delivery system comprises a combination of a heated vaporizer for the solid material operable at sub atmospheric pressure and a vapor delivery passage from the vaporizer to the vacuum chamber, the vapor delivery passage including a throttle valve followed by a vapor conduit, a pressure gauge that is responsive to sub atmospheric pressure being located between the throttle valve and the vapor conduit, surfaces of the vapor delivery passage that are exposed to the sublimed vapor, including such surfaces of the throttle valve, the pressure gauge and the vapor conduit, being adapted to be held at temperature above the condensation temperature of the solid material, and a closed-loop control system incorporating the pressure gauge being constructed to vary the conductance of the throttle valve to control the sub atmospheric pressure of the vapor downstream of the throttle valve in response to the output of the pressure gauge, flow of vapor to the vacuum chamber thereby being determined by pressure of the vapor in the region of the passage between the throttling valve and the vapor conduit.
摘要:
A method for operating a field emission device (100) having an electron emitter (115) includes the steps of providing an emitter-enhancing electrode (117) proximate to electron emitter (115), causing emitter-enhancing electrode (117) to emit electrons, and causing the electrons emitted by emitter-enhancing electrode (117) to be received by electron emitter (115). A method for fabricating a field emission device (100) includes the steps of forming a layer (126) of dielectric material, forming emitter-enhancing electrode (117) on layer (126) of dielectric material, forming an enhanced-emission structure (131) in emitter-enhancing electrode (117), removing a portion of layer (126) of dielectric material proximate to enhanced-emission structure (131) to form a well (114, 158), and forming electron emitter (115) within well (114, 158).
摘要:
The service lifetime of an ion source (400) is enhanced or prolonged by the source having provisions for ire-situ etch cleaning of the ion source (400) and of an extraction electrode (405), using reactive halogen gases (F1, F2), and by having features that extend the service duration between cleanings. The latter include accurate vapor flow control, accurate focusing of the ion beam optics, and thermal control of the extraction electrode that prevents formation of deposits or prevents electrode destruction. An apparatus comprised of an ion source for generating dopant ions for semiconductor wafer processing is coupled to a remote plasma source which delivers F or Cl ions to the first ion source for the purpose of cleaning deposits in the first ion source and the extraction electrode. These methods and apparatus enable long equipment uptime when running condensable feed gases such as sublimated vapor sources, and are particularly applicable for use with so-called cold ion sources. Methods and apparatus are described which enable long equipment uptime when decaborane and octadecarborane are used as feed materials, as well as when vaporized elemental arsenic and phosphorus are used, and which serve to enhance beam stability during ion implantation.
摘要:
A vapor delivery system comprises a combination of a heated vaporizer for the solid material operable at sub atmospheric pressure and a vapor delivery passage from the vaporizer to the vacuum chamber, the vapor delivery passage including a throttle valve followed by a vapor conduit, a pressure gauge that is responsive to sub atmospheric pressure being located between the throttle valve and the vapor conduit, surfaces of the vapor delivery passage that are exposed to the sublimed vapor, including such surfaces of the throttle valve, the pressure gauge and the vapor conduit, being adapted to be held at temperature above the condensation temperature of the solid material, and a closed-loop control system incorporating the pressure gauge being constructed to vary the conductance of the throttle valve to control the sub atmospheric pressure of the vapor downstream of the throttle valve in response to the output of the pressure gauge, flow of vapor to the vacuum chamber thereby being determined by pressure of the vapor in the region of the passage between the throttling valve and the vapor conduit.
摘要:
A shadow mask manufacturing method comprising the cleaning step performs rapid cleaning by spraying a cleaning solution, which is inert with respect to the band-like thin metal plate, upon upper and lower surfaces of the band-like thin metal plate and thereby generating cavitation near the surfaces of the band-like thin metal plate by using cavitation jet means, while regulating a position of the band-like thin metal plate and preventing the cleaning solution from leaking in a direction opposite to the conveyance direction of the band-like thin metal plate by using a first leakage-preventing seal unit provided upstream the cavitation jet means.
摘要:
An image display appratus is manufactured by processing a panel member through a plurality of chambers including ones for a bake processing and a getter processing. The getter processng is performed at a temperature lower than a temperature of the panel member subjected to the bake processing, to prevent degrading of a getter film.