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    VERFAHREN ZUR NANOSTRUKTURIERUNG VON AMORPHEN KOHLENSTOFFSCHICHTEN
    1.
    发明公开
    VERFAHREN ZUR NANOSTRUKTURIERUNG VON AMORPHEN KOHLENSTOFFSCHICHTEN 失效
    法制备纳米结构的无定形碳涂层的

    公开(公告)号：EP1000425A2

    公开(公告)日：2000-05-17

    申请号：EP98942596.2

    申请日：1998-07-22

    申请人： Institut für Festkörper- und Werkstofforschung Dresden e.V.

    发明人： MÜHL, Thomas ,  REISS, Günter ,  BRÜCKL, Hubert

    IPC分类号： G11B9/00 ,  G03F7/20 ,  G01N27/00

    CPC分类号： G11B9/14 ,  G01Q80/00 ,  G11B9/1463 ,  H01J37/3174 ,  H01J2237/31735 ,  H01J2237/31738 ,  H01L21/32131 ,  Y10S977/859

    摘要： The invention relates to the production or treatment of semiconductor or other solid components, especially to a method for directly nano-structuring amorphous carbonlayers. According to the invention, a local, field-induced reaction is activated in the carbon with an electrically conductive or semiconducting probe. Said probe is positioned at a distance from the amorphous carbon layer or is passed over said amorphous carbon layer at a distance. The distance must be such that the electrical conduction mechanism 'field emission' or 'tunnelling' can still occur. An electrical voltage is applied to said probe in relation to the layer at the points where recesses are to be made in the layer or the layer is to be removed. This process alone produces the desired structure without any further technical steps. The inventive method can be used advantageously in the production of electronic components in the sub-νm and nm areas, and is particularly suitable in those fields for producing nano-structured etching masks whose structures have to be transferred onto layers placed beneath them. The method can also be used advantageously for entering information into amorphous carbon layers for information storage.

    VERFAHREN ZUR NANOSTRUKTURIERUNG VON AMORPHEN KOHLENSTOFFSCHICHTEN
    3.
    发明授权
    VERFAHREN ZUR NANOSTRUKTURIERUNG VON AMORPHEN KOHLENSTOFFSCHICHTEN 失效
    法制备纳米结构的无定形碳涂层的

    公开(公告)号：EP1000425B1

    公开(公告)日：2006-09-06

    申请号：EP98942596.2

    申请日：1998-07-22

    申请人： Leibniz-Institut für Festkörper- und Werkstoffforschung Dresden e.V.

    发明人： MÜHL, Thomas ,  REISS, Günter ,  BRÜCKL, Hubert

    IPC分类号： G11B9/00 ,  G03F7/20 ,  G01N27/00

    CPC分类号： G11B9/14 ,  G01Q80/00 ,  G11B9/1463 ,  H01J37/3174 ,  H01J2237/31735 ,  H01J2237/31738 ,  H01L21/32131 ,  Y10S977/859

    摘要： The invention relates to the production or treatment of semiconductor or other solid components, especially to a method for directly nano-structuring amorphous carbonlayers. According to the invention, a local, field-induced reaction is activated in the carbon with an electrically conductive or semiconducting probe. Said probe is positioned at a distance from the amorphous carbon layer or is passed over said amorphous carbon layer at a distance. The distance must be such that the electrical conduction mechanism 'field emission' or 'tunnelling' can still occur. An electrical voltage is applied to said probe in relation to the layer at the points where recesses are to be made in the layer or the layer is to be removed. This process alone produces the desired structure without any further technical steps. The inventive method can be used advantageously in the production of electronic components in the sub-νm and nm areas, and is particularly suitable in those fields for producing nano-structured etching masks whose structures have to be transferred onto layers placed beneath them. The method can also be used advantageously for entering information into amorphous carbon layers for information storage.

    Method and apparatus for writing by the emission of atoms
    5.
    发明公开
    Method and apparatus for writing by the emission of atoms 失效
    用于排放原子的方法和装置

    公开(公告)号：EP0450771A3

    公开(公告)日：1993-02-24

    申请号：EP91301998.0

    申请日：1991-03-11

    申请人： International Business Machines Corporation

    发明人： Guethner, Peter Hermann ,  Mamin, Harry Jonathon ,  Rugar, Daniel

    IPC分类号： H01J37/317 ,  G03F1/08 ,  G11B9/00

    CPC分类号： B82B3/00 ,  G01Q80/00 ,  G11B9/14 ,  H01J2237/31738 ,  Y10S977/857

    摘要： Submicron structures are written on a surface (12) by positioning in nanometer range proximity, preferably within current tunnelling range, of the surface a scanning tip (11) of a material that emits atoms upon application of an applied voltage of low magnitude. While the tip is maintained within said range, it is moved relative to the surface, and a series of short voltage pulses are concurrently applied between the tip and surface. These pulses cause atoms of tip material to directly transfer to the surface and concurrently cause remaining atoms (21) of tip material to migrate to the tip and continuously reform the tip and maintain its sharp configuration, thereby insuring uninterrupted writing ability. Various tip materials exhibiting low field evaporation potentials may be used; however, gold is preferred if deposition is to be under ambient conditions. Heating the tip enhances the ability of the material to emit atoms. The deposited structures (20) may be selectively sensed or erased by application of appropriate voltages.

    摘要翻译： 亚微米结构通过在施加低幅度施加电压时发射原子的材料的扫描尖端的表面定位在表面的纳米范围附近，优选在当前隧道范围内定位。 当尖端保持在所述范围内时，其相对于表面移动，并且在尖端和表面之间同时施加一系列短脉冲。 这些脉冲使尖端材料的原子直接转移到表面，并且同时引起尖端材料的剩余原子迁移到尖端，并连续地改变尖端并保持其尖锐的构型，从而确保不间断的写入能力。 可以使用表现出低场蒸发电位的各种尖端材料; 然而，如果沉积处于环境条件下，则优选金。 加热尖端增强了材料发射原子的能力。 可以通过施加适当的电压来选择性地感测或擦除沉积的结构。

    SYSTEM FOR DETECTING ATOMIC OR MOLECULAR SPECTRA OF A SUBSTANCE, AND/OR THRESHOLD PHENOMENA ASSOCIATED WITH THE SAME
    7.
    发明授权
    SYSTEM FOR DETECTING ATOMIC OR MOLECULAR SPECTRA OF A SUBSTANCE, AND/OR THRESHOLD PHENOMENA ASSOCIATED WITH THE SAME 失效
    系统用于确定原子或分子光谱和/或相关阈值现象

    公开(公告)号：EP0650593B1

    公开(公告)日：2003-02-26

    申请号：EP93917238.3

    申请日：1993-07-16

    申请人： THE PENN STATE RESEARCH FOUNDATION ,  BIOTECHNOLOGY RESEARCH AND DEVELOPMENT CORPORATION

    发明人： WEISS, Paul, S. ,  STRANICK, Stephan, J.

    IPC分类号： G01N27/00 ,  G01N27/416

    CPC分类号： G11B9/14 ,  G01Q60/22 ,  G11B9/149 ,  G11B11/002 ,  G11B11/08 ,  H01J37/20 ,  H01J2237/204 ,  H01J2237/2065 ,  H01J2237/2538 ,  H01J2237/31738

    摘要： By applying a voltage or signal and withdrawing or injecting, an electron or electrons to a layer of material (26, 26'), it is possible to write, erase or read data electrochemically. The layer of material has at least one portion that will reversibly change between charge states in response to the applied voltage or signal and the withdrawal or injection of an electron or electrons. Alternatively, the material of the layer may be such that the portion of the layer of material will dissociate into components in response to the applied voltage or signal and injection or withdrawal of an electron or electrons. The stored data may be read using a scanning tunneling microscope (STM) by applying a voltage or signal (40) thereto and detecting the current (i) through, voltage across or signal reflected from the layer to detect the different charge states or structures of different portions of the layer. The signal or voltage (702) applied can be a DC or AC signal, a signal pulse or transient or various combinations thereof. By using a material with more than two charge states or with multiple locations each with different charge states and by applying a signal with and detecting at a single or multiple frequencies, it is possible to write, erase or read multiple bits of information simultaneously.

    READING AND WRITING STORED INFORMATION BY MEANS OF ELECTROCHEMISTRY
    9.
    发明公开
    READING AND WRITING STORED INFORMATION BY MEANS OF ELECTROCHEMISTRY 失效
    阅读和通过电化学方式存储的信息写入。

    公开(公告)号：EP0650629A1

    公开(公告)日：1995-05-03

    申请号：EP93917239.0

    申请日：1993-07-16

    申请人： THE PENN STATE RESEARCH FOUNDATION ,  BIOTECHNOLOGY RESEARCH AND DEVELOPMENT CORPORATION

    发明人： WEISS, Paul, S. ,  WILLIS, Barry, G. ,  STRANICK, Stephan, J.

    IPC分类号： G01Q60 ,  G11B9 ,  G11B11 ,  H01J37

    CPC分类号： G11B9/14 ,  G01Q60/22 ,  G11B9/149 ,  G11B11/002 ,  G11B11/08 ,  H01J37/20 ,  H01J2237/204 ,  H01J2237/2065 ,  H01J2237/2538 ,  H01J2237/31738

    摘要： By applying a voltage or signal and withdrawing or injecting, an electron or electrons to a layer of material (26, 26'), it is possible to write, erase or read data electrochemically. The layer of material has at least one portion that will reversibly change between charge states in response to the applied voltage or signal and the withdrawal or injection of an electron or electrons. Alternatively, the material of the layer may be such that the portion of the layer of material will dissociate into components in response to the applied voltage or signal and injection or withdrawal of an electron or electrons. The stored data may be read using a scanning tunneling microscope (STM) by applying a voltage or signal (40) thereto and detecting the current (i) through, voltage across or signal reflected from the layer to detect the different charge states or structures of different portions of the layer. The signal or voltage (702) applied can be a DC or AC signal, a signal pulse or transient or various combinations thereof. By using a material with more than two charge states or with multiple locations each with different charge states and by applying a signal with and detecting at a single or multiple frequencies, it is possible to write, erase or read multiple bits of information simultaneously.