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    ELECTRON BEAM DEVICE
    2.
    发明公开
    ELECTRON BEAM DEVICE 审中-公开
    ELEKTRONENSTRAHLEINRICHTUNG

    公开(公告)号：EP1703539A4

    公开(公告)日：2009-07-08

    申请号：EP04821103

    申请日：2004-11-25

    申请人： EBARA CORP

    发明人： WATANABE KENJI ,  SATAKE TOHRU ,  NAKASUJI MAMORU ,  MURAKAMI TAKESHI ,  KARIMATA TSUTOMU ,  NOJI NOBUHARU ,  TOHYAMA KEIICHI ,  HATAKEYAMA MASAHIRO

    IPC分类号： H01J37/29 ,  H01L21/66 ,  H01J37/073 ,  H01J37/12 ,  H01J37/147 ,  H01J37/26 ,  H01J37/28

    CPC分类号： H01J37/261 ,  H01J37/28 ,  H01J2237/06341 ,  H01J2237/2446 ,  H01J2237/24592 ,  H01J2237/2538

    摘要： An electron device capable of evaluating a sample at high throughput and high S/N. An electron beam emitted from an electron gun is irradiated, through an electrostatic lens (4-1), an objective lens (11-1), etc., in a diagonal direction on a sample (W) placed on an X-Y-theta stage (9-1), and secondary electrons or reflected electrons are discharged from the sample (W). The incident angle of the primary electron beam is set to about not less than 35º and less than 90º by controlling a polarizer (8-1). The electrons discharged from the sample (W) are guided in the vertical direction to form an image on a detector.

    摘要翻译： 一种能够以高吞吐量和高信噪比评估样品的电子器件。 从电子枪发射的电子束通过静电透镜（4-1），物镜（11-1）等在对角线方向上放置在放置在XY-θ台上的样品（W）上 （9-1），从样品（W）排出二次电子或反射电子。 通过控制偏振器（8-1），一次电子束的入射角设定为不小于35°且小于90°。 从样品（W）排出的电子在垂直方向上被引导以在检测器上形成图像。

    Charged particle beam device for high spatial resolution and multiple perspective imaging
    3.
    发明公开
    Charged particle beam device for high spatial resolution and multiple perspective imaging 有权
    粒子束用于透视图高空间分辨率和各种方法

    公开(公告)号：EP1703538A1

    公开(公告)日：2006-09-20

    申请号：EP05005887.4

    申请日：2005-03-17

    申请人： ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH

    发明人： Frosien, Jürgen

    IPC分类号： H01J37/244 ,  H01J37/05 ,  H01J37/10 ,  H01J37/28

    CPC分类号： H01J37/05 ,  H01J37/244 ,  H01J2237/047 ,  H01J2237/24465 ,  H01J2237/24475 ,  H01J2237/2448 ,  H01J2237/2538 ,  H01J2237/28

    摘要： The present invention relates to a charged particle device with improved detection scheme. The device has a charged particle source (1) providing a beam of primary charged particles; a first unit (5) for providing a potential; a second unit (7) for providing a potential; and a center unit (6) positioned between the first unit (5) and the second unit (7). The center unit is capable of providing a potential different from the potential of the first and the second unit for decelerating the primary charged particles to a first low energy and for accelerating the primary charged particles to a second high energy. Therein, the first unit (5) and/or the second unit (7) is a detector for detecting secondary electrons released at a specimen (4).

    摘要翻译： 本发明涉及具有改进的检测方案的带电粒子的设备。 该装置具有一个带电粒子源（1）提供初始带电粒子束; 第一单元（5），用于提供电势; 第二单元（7），用于提供电势; 和所述第一单元（5）和所述第二单元之间定位在中心单元（6）（7）。 中心单元能够从第一电势和用于主带电粒子减速到第一低能量和用于加速初级所述第二单元，其提供不同的电位的带电粒子至第二高能量。 在其中，所述第一单元（5）和/或所述第二单元（7）是用于检测在试样释放的二次电子的检测器（4）。

    ABERRATION-CORRECTING CATHODE LENS MICROSCOPY INSTRUMENT
    7.
    发明公开
    ABERRATION-CORRECTING CATHODE LENS MICROSCOPY INSTRUMENT 有权
    仪器像差校正阴极透镜显微镜

    公开(公告)号：EP1994544A2

    公开(公告)日：2008-11-26

    申请号：EP07756958.0

    申请日：2007-02-14

    申请人： International Business Machines Corporation

    发明人： TROMP, Rudolf, M.

    IPC分类号： H01J37/05 ,  H01J37/153 ,  G01N23/20 ,  G01N23/227

    CPC分类号： H01J37/153 ,  H01J37/05 ,  H01J37/252 ,  H01J37/295 ,  H01J2237/055 ,  H01J2237/1534 ,  H01J2237/2538 ,  H01J2237/2544

    摘要： An aberration-correcting microscopy instrument is provided. It has a first magnetic deflector (206) disposed for reception of a first non-dispersed electron diffraction pattern. The first magnetic deflector is also configured for projection of a first energy dispersed electron diffraction pattern in an exit plane (A2) of the first magnetic deflector. An electrostatic lens (224) is disposed in the exit plane of the first magnetic deflector. A second magnetic deflector (222) substantially identical to the first magnetic deflector is disposed for reception of the first energy dispersed electron diffraction pattern from the electrostatic lens. The second magnetic deflector is also configured for projection of a second non-dispersed electron diffraction pattern in a first exit plane (B2) of the second magnetic deflector. An electron mirror (226) is configured for correction of one or more aberrations in the second non-dispersed electron diffraction pattern. The electron mirror is disposed for reflection of the second non-dispersed electron diffraction pattern to the second magnetic deflector for projection of a second energy dispersed electron diffraction pattern in a second exit plane (B3) of the second magnetic deflector.

    READING AND WRITING STORED INFORMATION BY MEANS OF ELECTROCHEMISTRY
    8.
    发明授权
    READING AND WRITING STORED INFORMATION BY MEANS OF ELECTROCHEMISTRY 失效
    阅读和存储的信息电化学写作

    公开(公告)号：EP0650629B1

    公开(公告)日：2000-04-12

    申请号：EP93917239.1

    申请日：1993-07-16

    申请人： THE PENN STATE RESEARCH FOUNDATION ,  BIOTECHNOLOGY RESEARCH AND DEVELOPMENT CORPORATION

    发明人： WEISS, Paul, S. ,  WILLIS, Barry, G. ,  STRANICK, Stephan, J.

    IPC分类号： G11B9/00

    CPC分类号： G11B9/14 ,  G01Q60/22 ,  G11B9/149 ,  G11B11/002 ,  G11B11/08 ,  H01J37/20 ,  H01J2237/204 ,  H01J2237/2065 ,  H01J2237/2538 ,  H01J2237/31738

    摘要： By applying a voltage or signal and withdrawing or injecting, an electron or electrons to a layer of material (26, 26'), it is possible to write, erase or read data electrochemically. The layer of material has at least one portion that will reversibly change between charge states in response to the applied voltage or signal and the withdrawal or injection of an electron or electrons. Alternatively, the material of the layer may be such that the portion of the layer of material will dissociate into components in response to the applied voltage or signal and injection or withdrawal of an electron or electrons. The stored data may be read using a scanning tunneling microscope (STM) by applying a voltage or signal (40) thereto and detecting the current (i) through, voltage across or signal reflected from the layer to detect the different charge states or structures of different portions of the layer. The signal or voltage (702) applied can be a DC or AC signal, a signal pulse or transient or various combinations thereof. By using a material with more than two charge states or with multiple locations each with different charge states and by applying a signal with and detecting at a single or multiple frequencies, it is possible to write, erase or read multiple bits of information simultaneously.

    APPARATUS AND METHODS FOR SECONDARY ELECTRON EMISSION MICROSCOPY WITH DUAL BEAM
    10.
    发明授权
    APPARATUS AND METHODS FOR SECONDARY ELECTRON EMISSION MICROSCOPY WITH DUAL BEAM 有权
    装置和方法进行二次电镜观察BY双喷

    公开(公告)号：EP1183707B1

    公开(公告)日：2009-10-07

    申请号：EP00936340.9

    申请日：2000-05-25

    申请人： KLA-Tencor Corporation

    发明人： VENEKLASEN, Lee ,  ADLER, David

    IPC分类号： H01J37/26 ,  H01J37/02

    CPC分类号： H01J37/26 ,  H01J2237/0044 ,  H01J2237/2538 ,  H01J2237/262

    摘要： Disclosed is an apparatus for inspecting a sample. The apparatus includes a first electron beam generator arranged to direct a first electron beam having a first range of energy levels toward a first area of the sample and a second electron beam generator arranged to direct a second electron beam having a second range of energy levels toward a second area of the sample. The second area of the sample at least partly overlaps with the first area, and the second range of energy levels are different from the first range such that charge build up caused by the first electron beam is controlled. The apparatus further includes a detector arranged to detect secondary electrons originating from the sample as a result of the first and second electron beam interacting with the sample.