公开(公告)号：EP3236490A1

公开(公告)日：2017-10-25

申请号：EP15869912.4

申请日：2015-12-11

申请人： Nippon Steel & Sumikin Materials Co., Ltd. ,  Nippon Micrometal Corporation

发明人： OYAMADA Tetsuya ,  UNO Tomohiro ,  ODA Daizo ,  YAMADA Takashi

IPC分类号： H01L21/60 ,  C22C5/06 ,  C22F1/00 ,  C22F1/14

CPC分类号： H01L24/45 ,  B23K35/0227 ,  B23K35/3006 ,  B23K35/322 ,  H01L24/05 ,  H01L24/43 ,  H01L24/48 ,  H01L24/85 ,  H01L2224/05624 ,  H01L2224/43125 ,  H01L2224/4321 ,  H01L2224/435 ,  H01L2224/437 ,  H01L2224/43825 ,  H01L2224/43826 ,  H01L2224/43827 ,  H01L2224/43848 ,  H01L2224/45015 ,  H01L2224/45105 ,  H01L2224/45109 ,  H01L2224/45111 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45164 ,  H01L2224/45169 ,  H01L2224/45541 ,  H01L2224/45565 ,  H01L2224/45572 ,  H01L2224/45605 ,  H01L2224/45609 ,  H01L2224/45611 ,  H01L2224/45639 ,  H01L2224/45644 ,  H01L2224/45664 ,  H01L2224/45669 ,  H01L2224/48463 ,  H01L2224/48465 ,  H01L2224/48507 ,  H01L2224/78301 ,  H01L2224/85045 ,  H01L2224/85065 ,  H01L2224/85075 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01015 ,  H01L2924/0102 ,  H01L2924/01034 ,  H01L2924/01057 ,  H01L2924/0132 ,  H01L2924/10253 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/01031 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01029 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20108 ,  H01L2924/20109 ,  H01L2924/2011 ,  H01L2924/20111 ,  H01L2924/01204 ,  H01L2924/20105 ,  H01L2924/01001 ,  H01L2924/01007 ,  H01L2924/01004 ,  H01L2924/00012 ,  H01L2924/00015

摘要： The present invention provides a bonding wire capable of simultaneously satisfying ball bonding reliability and wedge bondability required of bonding wires for memories, the bonding wire including a core material containing one or more of Ga, In, and Sn for a total of 0.1 to 3.0 at% with a balance being made up of Ag and incidental impurities; and a coating layer formed over a surface of the core material, containing one or more of Pd and Pt, or Ag and one or more of Pd and Pt, with a balance being made up of incidental impurities, wherein the coating layer is 0.005 to 0.070 µm in thickness.

摘要翻译： 本发明提供一种接合线，其能够同时满足存储器用接合线所要求的球接合可靠性和楔形接合性，所述接合线包括含有Ga，In和Sn中的一种或多种的芯材，其总计为0.1至3.0 ％余量由Ag和不可避免的杂质组成; 以及在所述芯材的表面上形成的涂层，所述涂层包含Pd和Pt中的一种或多种，​​或者Ag以及Pd和Pt中的一种或多种，​​其余部分由不可避免的杂质构成，其中所述涂层为0.005〜 厚度为0.070μm。