公开(公告)号：EP2662890A1

公开(公告)日：2013-11-13

申请号：EP12003604.1

申请日：2012-05-07

申请人： Heraeus Materials Technology GmbH & Co. KG

发明人： Milke, Eugen, Dr. ,  Prenosil, Peter ,  Thomas, Sven, Dr.

IPC分类号： H01L23/49

CPC分类号： H01L24/45 ,  B21F9/005 ,  B23K1/0016 ,  B32B15/01 ,  C22C9/00 ,  C22C21/00 ,  C22F1/04 ,  C22F1/08 ,  H01B1/023 ,  H01B1/026 ,  H01L24/43 ,  H01L24/48 ,  H01L24/85 ,  H01L2224/4312 ,  H01L2224/43125 ,  H01L2224/43848 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45541 ,  H01L2224/45565 ,  H01L2224/45617 ,  H01L2224/45624 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2224/4823 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/48624 ,  H01L2224/48724 ,  H01L2224/48824 ,  H01L2224/85205 ,  H01L2224/85424 ,  H01L2224/859 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/00015 ,  H01L2924/01015 ,  H01L2924/01047 ,  H01L2924/01322 ,  H01L2924/1203 ,  H01L2924/12041 ,  H01L2924/12043 ,  H01L2924/1304 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/20303 ,  H01L2924/20304 ,  H01L2924/20305 ,  H01L2924/2076 ,  Y10T428/1275 ,  H01L2924/01201 ,  H01L2924/01012 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2924/01205 ,  H01L2924/00 ,  H01L2924/20104 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20108 ,  H01L2924/20109 ,  H01L2924/2011 ,  H01L2924/20111 ,  H01L2224/45139 ,  H01L2924/00012 ,  H01L2924/01049 ,  H01L2924/01006 ,  H01L2924/206

摘要： The invention relates to a wire, preferably a bonding wire for bonding in microelectronics, comprising a copper core (2) with a surface and coating layer(3) superimposed over the surface of the copper core (2), wherein the coating layer (3) comprises aluminium, wherein the ratio of the thickness of the coating layer (3) to the diameter of the copper core (2) is in the range of from 0.05 to 0.2 µm, wherein the ratio of the standard deviation of the diameter of the copper core (2) to the diameter of the copper core (2) is in the range of from 0.005 to 0.05 µm and wherein the ratio of the standard deviation of the thickness of the coating layer (3) to the thickness of the coating layer (3) is in the range of from 0.05 to 0.4 µm, wherein the wire has a diameter in the range of from 100 µm to 600 µm. The invention further relates to a process for making a wire, to a wire obtainable by said process, to an electric device comprising at least two elements and at least aforementioned wire, to a propelled device comprising said electric device and to a process of connecting two elements through aforementioned wire by wedge bonding.

摘要翻译： 本发明涉及一种电线，优选用于在微电子学中接合的接合线，包括具有叠加在铜芯（2）的表面上的表面和涂层（3）的铜芯（2），其中涂层 ）包括铝，其中所述涂层（3）的厚度与所述铜芯（2）的直径的比率在0.05至0.2μm的范围内，其中所述直径的标准偏差 铜芯（2）与铜芯（2）的直径在0.005至0.05μm的范围内，并且其中涂层（3）的厚度与涂层厚度的标准偏差之比 （3）的范围为0.05〜0.4μm，其中线的直径为100μm〜600μm。 本发明还涉及一种用于将线材制成的方法，可由所述方法可获得的线材组装到包括至少两个元件和至少前述的线材的电气设备到包括所述电气设备的推进设备以及连接两个 元件通过上述丝线通过楔形粘结。

公开(公告)号：EP3017470A1

公开(公告)日：2016-05-11

申请号：EP14735474.0

申请日：2014-07-02

申请人： Rosenberger Hochfrequenztechnik GmbH & Co. KG

发明人： CAHILL, Sean S. ,  SANJUAN, Eric A.

IPC分类号： H01L23/49 ,  H01L23/50 ,  H01L23/66

CPC分类号： H01L23/49541 ,  H01L21/4821 ,  H01L21/4846 ,  H01L23/49506 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/50 ,  H01L23/64 ,  H01L23/645 ,  H01L23/66 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/85 ,  H01L2223/6611 ,  H01L2224/45541 ,  H01L2224/4555 ,  H01L2224/4556 ,  H01L2224/45565 ,  H01L2224/4569 ,  H01L2224/48011 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/4903 ,  H01L2224/49052 ,  H01L2224/85444 ,  H01L2224/8592 ,  H01L2224/8593 ,  H01L2224/85931 ,  H01L2224/85935 ,  H01L2224/85939 ,  H01L2224/85947 ,  H01L2924/00014 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/30111 ,  H01L2924/20654 ,  H01L2224/45099 ,  H01L2924/00

摘要： A die package having a plurality of connection pads, a die substrate supporting a plurality of connection elements, a first lead having a first metal core with a first core diameter, and a dielectric layer surrounding the first metal core, the dielectric layer having a first dielectric thickness that varies along its length and/or the dielectric layer having an outer metal layer at least partially surrounding the dielectric layer, for selectively modifying the electrical characteristics of the lead.

摘要翻译： 具有多个连接焊盘的模具封装，支撑多个连接元件的管芯基板，具有第一芯直径的第一金属芯的第一引线和围绕第一金属芯的介电层，该介电层具有第一 电介质厚度沿其长度变化和/或具有至少部分围绕电介质层的外部金属层的电介质层，用于选择性地修改引线的电特性。

公开(公告)号：EP3136427A1

公开(公告)日：2017-03-01

申请号：EP15782477.2

申请日：2015-04-21

申请人： Nippon Steel & Sumikin Materials Co., Ltd. ,  Nippon Micrometal Corporation

发明人： OYAMADA Tetsuya ,  UNO Tomohiro ,  DEAI Hiroyuki

IPC分类号： H01L21/60 ,  C22C9/00 ,  C22C9/06

CPC分类号： H01L24/45 ,  B23K35/302 ,  B32B15/018 ,  B32B15/20 ,  C22C9/00 ,  C22C9/06 ,  H01L24/43 ,  H01L2224/05624 ,  H01L2224/4321 ,  H01L2224/43825 ,  H01L2224/43827 ,  H01L2224/43848 ,  H01L2224/45 ,  H01L2224/45147 ,  H01L2224/45155 ,  H01L2224/45541 ,  H01L2224/45565 ,  H01L2224/45572 ,  H01L2224/45644 ,  H01L2224/45664 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01015 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01046 ,  H01L2924/01049 ,  H01L2924/01078 ,  H01L2924/013 ,  H01L2924/10253 ,  H01L2924/00 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20108 ,  H01L2924/20109 ,  H01L2924/2011 ,  H01L2924/20111 ,  H01L2924/00012 ,  H01L2924/01004 ,  H01L2924/01204 ,  H01L2924/01028 ,  H01L2924/01033

摘要： There is provided a bonding wire that improves bonding reliability of a ball bonded part and ball formability and is suitable for on-vehicle devices.
The bonding wire for a semiconductor includes a Cu alloy core material, and a Pd coating layer formed on a surface of the Cu alloy core material, and is characterized in that the Cu alloy core material contains Ni, a concentration of Ni is 0.1 to 1.2 wt.% relative to the entire wire, and a thickness of the Pd coating layer is 0.015 to 0.150 µm.

摘要翻译： 提供了提高球接合部的接合可靠性和球成形性的接合线，并且适用于车载装置。 本发明的半导体用接合线具有Cu合金芯材和在Cu合金芯材的表面形成的Pd被覆层，其特征在于，Cu合金芯材含有Ni，Ni的浓度为0.1〜1.2 相对于整个线的重量％，并且所述Pd涂层的厚度为0.015至0.150μm。

公开(公告)号：EP3017470B1

公开(公告)日：2018-10-24

申请号：EP14735474.0

申请日：2014-07-02

申请人： Rosenberger Hochfrequenztechnik GmbH & Co. KG

发明人： CAHILL, Sean S. ,  SANJUAN, Eric A.

IPC分类号： H01L21/60 ,  H01L23/49 ,  H01L23/66 ,  H01L23/50

CPC分类号： H01L23/49541 ,  H01L21/4821 ,  H01L21/4846 ,  H01L23/49506 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/50 ,  H01L23/64 ,  H01L23/645 ,  H01L23/66 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/85 ,  H01L2223/6611 ,  H01L2224/45541 ,  H01L2224/4555 ,  H01L2224/4556 ,  H01L2224/45565 ,  H01L2224/4569 ,  H01L2224/48011 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/4903 ,  H01L2224/49052 ,  H01L2224/85444 ,  H01L2224/8592 ,  H01L2224/8593 ,  H01L2224/85931 ,  H01L2224/85935 ,  H01L2224/85939 ,  H01L2224/85947 ,  H01L2924/00014 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/30111 ,  H01L2924/20654 ,  H01L2224/45099 ,  H01L2924/00

摘要： A die package having a plurality of connection pads, a die substrate supporting a plurality of connection elements, a first lead having a first metal core with a first core diameter, and a dielectric layer surrounding the first metal core, the dielectric layer having a first dielectric thickness that varies along its length and/or the dielectric layer having an outer metal layer at least partially surrounding the dielectric layer, for selectively modifying the electrical characteristics of the lead.

公开(公告)号：EP3131113A4

公开(公告)日：2017-03-22

申请号：EP15866375

申请日：2015-07-22

申请人： NIPPON MICROMETAL CORP ,  NIPPON STEEL & SUMIKIN MAT CO

发明人： YAMADA TAKASHI ,  ODA DAIZO ,  HAIBARA TERUO ,  OISHI RYO ,  SAITO KAZUYUKI ,  UNO TOMOHIRO

IPC分类号： H01L23/49 ,  C22C9/00

CPC分类号： H01L24/45 ,  B23K35/0227 ,  B23K35/3013 ,  B23K35/302 ,  B23K2201/40 ,  C22C5/04 ,  C22C9/00 ,  C22C9/04 ,  C22C9/06 ,  H01L24/05 ,  H01L24/43 ,  H01L24/48 ,  H01L2224/05624 ,  H01L2224/43 ,  H01L2224/4312 ,  H01L2224/43125 ,  H01L2224/4321 ,  H01L2224/4382 ,  H01L2224/43848 ,  H01L2224/43986 ,  H01L2224/45 ,  H01L2224/45005 ,  H01L2224/45015 ,  H01L2224/45105 ,  H01L2224/45109 ,  H01L2224/45111 ,  H01L2224/45113 ,  H01L2224/45118 ,  H01L2224/4512 ,  H01L2224/45147 ,  H01L2224/45155 ,  H01L2224/45169 ,  H01L2224/45173 ,  H01L2224/45178 ,  H01L2224/45541 ,  H01L2224/45565 ,  H01L2224/45572 ,  H01L2224/45644 ,  H01L2224/45664 ,  H01L2224/48227 ,  H01L2224/4845 ,  H01L2224/48463 ,  H01L2224/48824 ,  H01L2224/78 ,  H01L2224/78251 ,  H01L2224/85 ,  H01L2224/85065 ,  H01L2224/85075 ,  H01L2224/85203 ,  H01L2224/85444 ,  H01L2924/01005 ,  H01L2924/01012 ,  H01L2924/01015 ,  H01L2924/0102 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01034 ,  H01L2924/01052 ,  H01L2924/01057 ,  H01L2924/0665 ,  H01L2924/0705 ,  H01L2924/10253 ,  H01L2924/186 ,  H01L2924/01028 ,  H01L2924/0103 ,  H01L2924/01045 ,  H01L2924/01049 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01031 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01083 ,  H01L2924/01079 ,  H01L2924/01046 ,  H01L2924/01029 ,  H01L2924/01202 ,  H01L2924/01203 ,  H01L2924/01204 ,  H01L2924/00015 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20108 ,  H01L2924/20109 ,  H01L2924/2011 ,  H01L2924/20111 ,  H01L2924/20752 ,  H01L2924/00014 ,  H01L2924/01014 ,  H01L2924/013 ,  H01L2924/00013 ,  H01L2924/20105 ,  H01L2924/01001 ,  H01L2924/01007 ,  H01L2924/00012 ,  H01L2924/00

摘要： There is provided a bonding wire for a semiconductor device, the bonding wire including a Cu alloy core material and a Pd coating layer formed on a surface thereof, achieving simultaneously improvement in bonding reliability of a ball bonded part in HTS at 175°C to 200°C and an strength ratio (= ultimate strength/0.2% offset yield strength) of 1.1 to 1.6. Containing one or more of Ni, Zn, Rh, in, Ir, and Pt in the wire in a total amount of 0.03 to 2% by mass improves the bonding reliability of the ball bonded part in HTS, and furthermore, making an orientation proportion of a crystal orientation angled at 15 degrees or less to a wire longitudinal direction among crystal orientations in the wire longitudinal direction 50% or more when measuring crystal orientations on a cross-section of the core material in a direction perpendicular to a wire axis of the bonding wire, and making an average crystal grain size in the cross-section of the core material in the direction perpendicular to the wire axis of the bonding wire 0.9 to 1.3 µm provides a strength ratio of 1.6 or less.

摘要翻译： 提供一种用于半导体器件的接合线，接合线包括Cu合金芯材和在其表面上形成的Pd涂层，同时在HTS中在175℃至200℃的接合可靠性提高 °C和1.1至1.6的强度比（=极限强度/ 0.2％偏移屈服强度）。 通过含有总量为0.03〜2质量％的Ni，Zn，Rh，In，Ir及Pt中的一种以上，可以提高HTS中球接合部的接合可靠性，并且可以使取向比例 在芯线材料的垂直于线材的方向上的截面上测量晶体取向时，在线材长度方向上的晶体取向中，相对于线材长度方向成15°以下的角度的晶体取向<100>为50％以上 并且使芯材截面中在与接合线的线轴垂直的方向上的平均晶粒尺寸为0.9至1.3μm，提供1.6或更小的强度比。

公开(公告)号：EP3136427A4

公开(公告)日：2018-03-14

申请号：EP15782477

申请日：2015-04-21

申请人： NIPPON STEEL & SUMIKIN MAT CO ,  NIPPON MICROMETAL CORP

发明人： OYAMADA TETSUYA ,  UNO TOMOHIRO ,  DEAI HIROYUKI

IPC分类号： H01L21/60 ,  C22C9/00 ,  C22C9/06 ,  H01L23/00

CPC分类号： H01L24/45 ,  B23K35/302 ,  B32B15/018 ,  B32B15/20 ,  C22C9/00 ,  C22C9/06 ,  H01L24/43 ,  H01L2224/05624 ,  H01L2224/4321 ,  H01L2224/43825 ,  H01L2224/43827 ,  H01L2224/43848 ,  H01L2224/45 ,  H01L2224/45147 ,  H01L2224/45155 ,  H01L2224/45541 ,  H01L2224/45565 ,  H01L2224/45572 ,  H01L2224/45644 ,  H01L2224/45664 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01015 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01046 ,  H01L2924/01049 ,  H01L2924/01078 ,  H01L2924/013 ,  H01L2924/10253 ,  H01L2924/00 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20108 ,  H01L2924/20109 ,  H01L2924/2011 ,  H01L2924/20111 ,  H01L2924/00012 ,  H01L2924/01004 ,  H01L2924/01204 ,  H01L2924/01028 ,  H01L2924/01033

摘要： There is provided a bonding wire that improves bonding reliability of a ball bonded part and ball formability and is suitable for on-vehicle devices. The bonding wire for a semiconductor includes a Cu alloy core material, and a Pd coating layer formed on a surface of the Cu alloy core material, and is characterized in that the Cu alloy core material contains Ni, a concentration of Ni is 0.1 to 1.2 wt.% relative to the entire wire, and a thickness of the Pd coating layer is 0.015 to 0.150 µm.

公开(公告)号：EP3236490A1

公开(公告)日：2017-10-25

申请号：EP15869912.4

申请日：2015-12-11

申请人： Nippon Steel & Sumikin Materials Co., Ltd. ,  Nippon Micrometal Corporation

发明人： OYAMADA Tetsuya ,  UNO Tomohiro ,  ODA Daizo ,  YAMADA Takashi

IPC分类号： H01L21/60 ,  C22C5/06 ,  C22F1/00 ,  C22F1/14

CPC分类号： H01L24/45 ,  B23K35/0227 ,  B23K35/3006 ,  B23K35/322 ,  H01L24/05 ,  H01L24/43 ,  H01L24/48 ,  H01L24/85 ,  H01L2224/05624 ,  H01L2224/43125 ,  H01L2224/4321 ,  H01L2224/435 ,  H01L2224/437 ,  H01L2224/43825 ,  H01L2224/43826 ,  H01L2224/43827 ,  H01L2224/43848 ,  H01L2224/45015 ,  H01L2224/45105 ,  H01L2224/45109 ,  H01L2224/45111 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45164 ,  H01L2224/45169 ,  H01L2224/45541 ,  H01L2224/45565 ,  H01L2224/45572 ,  H01L2224/45605 ,  H01L2224/45609 ,  H01L2224/45611 ,  H01L2224/45639 ,  H01L2224/45644 ,  H01L2224/45664 ,  H01L2224/45669 ,  H01L2224/48463 ,  H01L2224/48465 ,  H01L2224/48507 ,  H01L2224/78301 ,  H01L2224/85045 ,  H01L2224/85065 ,  H01L2224/85075 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01015 ,  H01L2924/0102 ,  H01L2924/01034 ,  H01L2924/01057 ,  H01L2924/0132 ,  H01L2924/10253 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/01031 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01029 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20108 ,  H01L2924/20109 ,  H01L2924/2011 ,  H01L2924/20111 ,  H01L2924/01204 ,  H01L2924/20105 ,  H01L2924/01001 ,  H01L2924/01007 ,  H01L2924/01004 ,  H01L2924/00012 ,  H01L2924/00015

摘要： The present invention provides a bonding wire capable of simultaneously satisfying ball bonding reliability and wedge bondability required of bonding wires for memories, the bonding wire including a core material containing one or more of Ga, In, and Sn for a total of 0.1 to 3.0 at% with a balance being made up of Ag and incidental impurities; and a coating layer formed over a surface of the core material, containing one or more of Pd and Pt, or Ag and one or more of Pd and Pt, with a balance being made up of incidental impurities, wherein the coating layer is 0.005 to 0.070 µm in thickness.

摘要翻译： 本发明提供一种接合线，其能够同时满足存储器用接合线所要求的球接合可靠性和楔形接合性，所述接合线包括含有Ga，In和Sn中的一种或多种的芯材，其总计为0.1至3.0 ％余量由Ag和不可避免的杂质组成; 以及在所述芯材的表面上形成的涂层，所述涂层包含Pd和Pt中的一种或多种，​​或者Ag以及Pd和Pt中的一种或多种，​​其余部分由不可避免的杂质构成，其中所述涂层为0.005〜 厚度为0.070μm。

公开(公告)号：EP3131113A1

公开(公告)日：2017-02-15

申请号：EP15866375.7

申请日：2015-07-22

申请人： Nippon Micrometal Corporation ,  Nippon Steel & Sumikin Materials Co., Ltd.

发明人： YAMADA, Takashi ,  ODA, Daizo ,  HAIBARA, Teruo ,  OISHI, Ryo ,  SAITO, Kazuyuki ,  UNO, Tomohiro

IPC分类号： H01L21/60

CPC分类号： B23K35/0227 ,  B23K35/3013 ,  B23K35/302 ,  B23K2201/40 ,  C22C5/04 ,  C22C9/00 ,  C22C9/04 ,  C22C9/06 ,  H01L24/05 ,  H01L24/43 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/05624 ,  H01L2224/43 ,  H01L2224/4312 ,  H01L2224/43125 ,  H01L2224/4321 ,  H01L2224/4382 ,  H01L2224/43848 ,  H01L2224/43986 ,  H01L2224/45 ,  H01L2224/45005 ,  H01L2224/45015 ,  H01L2224/45105 ,  H01L2224/45109 ,  H01L2224/45111 ,  H01L2224/45113 ,  H01L2224/45118 ,  H01L2224/4512 ,  H01L2224/45147 ,  H01L2224/45155 ,  H01L2224/45169 ,  H01L2224/45173 ,  H01L2224/45178 ,  H01L2224/45541 ,  H01L2224/45565 ,  H01L2224/45572 ,  H01L2224/45644 ,  H01L2224/45664 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/4845 ,  H01L2224/48463 ,  H01L2224/48824 ,  H01L2224/78 ,  H01L2224/78251 ,  H01L2224/85 ,  H01L2224/85065 ,  H01L2224/85075 ,  H01L2224/85203 ,  H01L2224/85444 ,  H01L2224/85464 ,  H01L2924/01005 ,  H01L2924/01012 ,  H01L2924/01015 ,  H01L2924/0102 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01034 ,  H01L2924/01052 ,  H01L2924/01057 ,  H01L2924/0665 ,  H01L2924/0705 ,  H01L2924/10253 ,  H01L2924/186 ,  H01L2924/01028 ,  H01L2924/0103 ,  H01L2924/01045 ,  H01L2924/01049 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01031 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01083 ,  H01L2924/01079 ,  H01L2924/01046 ,  H01L2924/01029 ,  H01L2924/01202 ,  H01L2924/01203 ,  H01L2924/01204 ,  H01L2924/00015 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20108 ,  H01L2924/20109 ,  H01L2924/2011 ,  H01L2924/20111 ,  H01L2924/20752 ,  H01L2924/00014 ,  H01L2924/01014 ,  H01L2924/013 ,  H01L2924/00013 ,  H01L2924/20105 ,  H01L2924/01001 ,  H01L2924/01007 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/01027 ,  H01L2924/01047 ,  H01L2924/01013

摘要： There is provided a bonding wire for a semiconductor device, the bonding wire including a Cu alloy core material and a Pd coating layer formed on a surface thereof, achieving simultaneously improvement in bonding reliability of a ball bonded part in HTS at 175°C to 200°C and an strength ratio (= ultimate strength/0.2% offset yield strength) of 1.1 to 1.6.
Containing one or more of Ni, Zn, Rh, in, Ir, and Pt in the wire in a total amount of 0.03 to 2% by mass improves the bonding reliability of the ball bonded part in HTS, and furthermore, making an orientation proportion of a crystal orientation angled at 15 degrees or less to a wire longitudinal direction among crystal orientations in the wire longitudinal direction 50% or more when measuring crystal orientations on a cross-section of the core material in a direction perpendicular to a wire axis of the bonding wire, and making an average crystal grain size in the cross-section of the core material in the direction perpendicular to the wire axis of the bonding wire 0.9 to 1.3 µm provides a strength ratio of 1.6 or less.

摘要翻译： 提供了一种用于半导体器件的接合线，该接合线包括在其表面上形成的Cu合金芯材料和Pd涂层，实现了在175℃至200℃的HTS中的球接合部分的接合可靠性的同时提高 °C，强度比（=极限强度/ 0.2％偏移屈服强度）为1.1〜1.6。 在金属丝中含有0.03〜2质量％的Ni，Zn，Rh，In，Ir和Pt中的一种或多种，​​提高了在HTS中的球接合部的接合可靠性，此外，使取向比例 当在与芯线垂直的方向上测量芯材的横截面上的晶体取向时，在线长度方向上的晶体取向之间的线长度方向上的15度或更小的晶体取向<100>为50％ 并且在芯材的垂直于接合线的线轴的方向0.9-1.3μm的横截面中使平均晶粒尺寸提供1.6或更小的强度比。