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1.发明公开Manufacturing method of a nitride semiconductor device 审中-公开Herstellungsverfahrenfüreine Nitrid-Halbleitervorrichtung
公开(公告)号：EP1244141A1
公开(公告)日：2002-09-25
申请号：EP02011557.2
申请日：1999-09-10
CPC分类号： H01L33/0075 , H01L21/0237 , H01L21/02389 , H01L21/0242 , H01L21/0243 , H01L21/02433 , H01L21/02458 , H01L21/02494 , H01L21/02502 , H01L21/0254 , H01L21/0262 , H01L21/02658 , H01L29/045 , H01L29/2003 , H01L33/007 , H01L33/0079
摘要： A semiconductor device includes: a crystalline substrate including a primary surface and a crystal plane provided within the primary surface so as to have a surface orientation different from a surface orientation of the primary surface; a semiconductor layered structure grown over the crystalline substrate; and an active region provided at a portion in the semiconductor layer structure above the crystal plane.
摘要翻译： 半导体器件包括：晶体衬底，其包括主表面和设置在主表面内的晶面，以便具有不同于主表面的表面取向的表面取向; 在晶体衬底上生长的半导体层状结构; 以及设置在半导体层结构的在晶面以上的部分的有源区。
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公开(公告)号：EP1244140A2
公开(公告)日：2002-09-25
申请号：EP02006408.5
申请日：2002-03-21
发明人： Ishida, Masahiro , Ueda, Daisuke , Yuri, Masaaki
IPC分类号： H01L21/20
CPC分类号： C30B25/02 , C30B25/18 , C30B29/403 , C30B29/406 , H01L21/02378 , H01L21/02389 , H01L21/02458 , H01L21/0254 , H01L21/02642 , H01L21/02647 , H01L33/0079
摘要： A mask film of a material on which substantially no nitride semiconductor grows and having a plurality of openings in a stripe shape is formed on a main surface of a base substrate. Then, on the base substrate, a semiconductor layer of nitride is selectively grown through the mask film. Then, a laser beam is irradiated upon the interface between the semiconductor layer and the base substrate to separate the semiconductor layer from the base substrate, so that a nitride semiconductor substrate is formed from the semiconductor layer.
摘要翻译： 在基底基板的主表面上形成有基本上没有氮化物半导体生长并具有多个条形开口的材料的掩模膜。 然后，在基底基板上，选择性地通过掩模膜生长氮化物半导体层。 然后，将激光束照射在半导体层和基底基板之间的界面上，以将半导体层与基底基板分离，从而从半导体层形成氮化物半导体衬底。
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3.发明公开Semiconductor substrate for improving pattern formation in photolithographic process 审中-公开一种用于在光刻工艺改进的生产模式的半导体衬底
公开(公告)号：EP1180725A2
公开(公告)日：2002-02-20
申请号：EP01119037.8
申请日：2001-08-07
IPC分类号： G03F7/09
CPC分类号： H01L21/02389 , G03F7/091 , H01L21/0242 , H01L21/0245 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/02639 , H01L33/005 , H01L33/007 , H01L33/20 , H01L33/22 , H01S5/0207 , H01S5/22 , H01S5/2219 , H01S5/32341
摘要： A semiconductor substrate comprises a semiconductor layer comprising a group III nitride as a main component. A scattering portion for scattering an incident beam of light incident on one plane of the semiconductor layer is provided on another plane or inside of the semiconductor layer.
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公开(公告)号：EP1143584A2
公开(公告)日：2001-10-10
申请号：EP01303053.1
申请日：2001-03-30
发明人： Yuri, Masaaki , Tamai, Seiichiro , Ito, Kunio , Kazamura, Masaru
CPC分类号： A61F9/008 , A61B18/20 , A61F2009/00863 , A61F2009/00872 , H01S5/005 , H01S5/2218 , H01S5/4025 , H01S5/405 , H01S5/4062 , H01S5/4068
摘要： To provide a semiconductor laser device that is capable of outputting high power laser light and is suitable for optical recording, optical communication, welding, and the like, and a multiple wavelength laser light emitting apparatus employing the semiconductor laser device. The semiconductor laser device includes an optical element that at least partially reflects a laser beam emitted from an end face of a laser light oscillator in a semiconductor laser array element so that the laser beam is incident on another laser light oscillator. Due to this, even when laser light oscillators are disposed with such a pitch that does not pose problems in manufacturing, a laser beam emitted from an end face of one laser light oscillator and a laser beam emitted from an end face of another laser light oscillator are phase-locked. By condensing these laser beams, the semiconductor laser device can output higher power laser light than conventional.
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5.发明公开Semiconductor substrate for improving pattern formation in photolithographic process 审中-公开Halbleitersubstrat zur Verbesserung der Strukturbildung im photolithographischen Prozess
公开(公告)号：EP1850179A1
公开(公告)日：2007-10-31
申请号：EP07014324.3
申请日：2001-08-07
IPC分类号： G03F7/09
CPC分类号： H01L21/02389 , G03F7/091 , H01L21/0242 , H01L21/0245 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/02639 , H01L33/005 , H01L33/007 , H01L33/20 , H01L33/22 , H01S5/0207 , H01S5/22 , H01S5/2219 , H01S5/32341
摘要： A semiconductor substrate comprises a semiconductor layer comprising a group III nitride as a main component. A scattering portion for scattering an incident beam of light incident on one plane of the semiconductor layer is provided on another plane or inside of the semiconductor layer.
摘要翻译： 半导体衬底包括以III族氮化物为主要成分的半导体层。 用于散射入射在半导体层的一个平面上的入射光束的散射部分设置在半导体层的另一平面或内部。
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公开(公告)号：EP1113485A3
公开(公告)日：2005-08-31
申请号：EP00128255.7
申请日：2000-12-22
发明人： Orita, Kenzi , Ishida, Masahiro , Yuri, Masaaki
IPC分类号： H01L21/20 , H01L21/205
CPC分类号： H01L21/0242 , B82Y20/00 , H01L21/02389 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01S5/34333
摘要： A method for producing a semiconductor device of the present invention includes: heating a first semiconductor layer 12 made of a Group III nitride-based compound semiconductor in gas containing nitrogen atoms; and growing a second semiconductor layer 13 made of a Group III nitride-based compound semiconductor on the first semiconductor layer 12.
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公开(公告)号：EP1195864A3
公开(公告)日：2004-11-10
申请号：EP01123682.5
申请日：2001-10-02
CPC分类号： H01S5/32308 , H01S5/20 , H01S5/2004 , H01S5/2009 , H01S5/2206 , H01S5/221 , H01S5/2231 , H01S5/3213
摘要： A semiconductor laser device comprises, on top of an active layer, an n-type cladding layer of Al x1 Ga 1-x1 As and a p-type cladding layer of (Al x Ga 1-x ) y In 1-y P for defining a barrier height. The p-type cladding layer for defining a barrier height contains more component elements than the n-type cladding layer. The potential difference between the conduction band edges of the p-type cladding layer for defining a barrier height and the active layer is greater than the potential difference between the conduction band edges of the n-type cladding layer and the active layer. The carriers in the active layer are prevented from overflowing into the p-type cladding layer and a material having a high thermal conductivity is used for the n-type cladding layer to prevent the phenomenon of thermal saturation, thereby providing improved optical output.
摘要翻译： 半导体激光装置在有源层的顶部包括用于限定势垒高度的Alx1Ga1-x1As的n型包覆层和（AlxGa1-x）yIn1-yP的p型包覆层。 用于限定势垒高度的p型覆层包含比n型覆层更多的组分元素。 用于限定势垒高度的p型包覆层的导带边缘与有源层之间的电势差大于n型包覆层和有源层的导带边缘之间的电势差。 防止有源层中的载流子溢出到p型覆层中，并且将具有高热导率的材料用于n型覆层以防止热饱和现象，由此提供改善的光输出。
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公开(公告)号：EP1258913A2
公开(公告)日：2002-11-20
申请号：EP02011197.7
申请日：2002-05-21
IPC分类号： H01L21/20
CPC分类号： H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L33/0066 , H01L33/0079 , H01L33/0095 , Y10S438/977
摘要： A first semiconductor layer is formed on a mother substrate, and the mother substrate is irradiated with irradiation light from a surface opposite to the first semiconductor layer, so that a thermally decomposed layer formed by thermally decomposing the first semiconductor layer between the first semiconductor layer and the mother substrate. Then, a second semiconductor layer including an active layer is formed on the first semiconductor layer in which the thermally decomposed layer is formed.
摘要翻译： 在母基板上形成第一半导体层，并且用来自与第一半导体层相对的表面的照射光照射母基板，从而在第一半导体层和第二半导体层之间热分解第一半导体层而形成热分解层 母板。 然后，在其中形成热分解层的第一半导体层上形成包括有源层的第二半导体层。
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9.发明公开Optical pick-up and information recording and reproducing apparatus 审中-公开OptischeAbtastgerätundAufzeichnungsgerätund Wiedergabe von信息
公开(公告)号：EP1160776A2
公开(公告)日：2001-12-05
申请号：EP01113040.8
申请日：2001-05-29
IPC分类号： G11B7/12
CPC分类号： G11B7/127 , G11B7/08582 , G11B7/123
摘要： An optical-pick up preventing the deterioration of the optical property by mounting the entire optical system on the movable portion and aligning the optical axis of the semiconductor laser element having the shortest wavelength with the center of the optical axis of the objective lens and an information recording and reproducing apparatus on which the optical pick-up is mounted. The optical pick-up includes a movable portion 6 on which at least a plurality of semiconductor laser elements 2 irradiating an optical recording medium 12 with laser beams and an objective lens 1 converging laser beams emerged from the semiconductor laser element are mounted, a fixed portion 7 supporting the movable portion 6, and a supporting component 8 connecting the movable portion 6 to the fixed portion 7 so that the movable portion 6 is rockable in a focus direction and a tracking direction of the optical recording medium 12; wherein at least two of the plurality of semiconductor laser elements 2 have a different lasing wavelength from each other and an optical axis of the semiconductor laser element having the shortest wavelength is aligned with the center of the optical axis of the objective lens 1. Thereby, it is possible to prevent the optical displacement in the optical system when the position of the objective lens is changed.
摘要翻译： 通过将整个光学系统安装在可动部分上并将具有最短波长的半导体激光元件的光轴与物镜的光轴的中心对准的光学特性和信息 记录和再现装置，其上安装有光学拾取器。 光学拾取器包括可动部分6，其中至少多个激光束照射光记录介质12的半导体激光元件2和从半导体激光元件出射会聚激光束的物镜1安装在固定部分6上 支撑可动部分6的支撑部件8和将可动部分6连接到固定部分7的支撑部件8，使得可移动部分6能够在光学记录介质12的聚焦方向和跟踪方向上摆动; 其中，所述多个半导体激光元件2中的至少两个具有彼此不同的激光波长，并且具有最短波长的半导体激光元件的光轴与物镜1的光轴的中心对准。由此， 当物镜的位置改变时，可以防止光学系统中的光学位移。
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10.发明公开Semiconductor substrate, semiconductor device and method of manufacturing the same 失效半导体衬底，半导体器件及其制造方法
公开(公告)号：EP0871228A3
公开(公告)日：2001-10-24
申请号：EP98106483.5
申请日：1998-04-08
CPC分类号： H01L33/007 , B82Y20/00 , C30B25/18 , H01S5/0207 , H01S5/021 , H01S5/2231 , H01S5/3201 , H01S5/34333 , H01S2301/173
摘要： A sapphire substrate, a buffer layer of undoped GaN and a compound semiconductor crystal layer successively formed on the sapphire substrate together form a substrate of a light emitting diode. A first cladding layer of n-type GaN, an active layer of undoped In 0.2 Ga 0.8 N and a second cladding layer successively formed on the compound semiconductor crystal layer together form a device structure of the light emitting diode. On the second cladding layer, a p-type electrode is formed, and on the first cladding layer, an n-type electrode is formed. In a part of the sapphire substrate opposing the p-type electrode, a recess having a trapezoidal section is formed, so that the thickness of an upper portion of the sapphire substrate above the recess can be substantially equal to or smaller than the thickness of the compound semiconductor crystal layer.
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