摘要:
Provided is a technique capable of suppressing oscillation noise of a semiconductor device and suppressing mirror noise. Included are: a switching device configured to conduct or open a state between a drain terminal and a source terminal based on a voltage applied between a gate terminal and the source terminal; a drive circuit including a first switch element and a second switch element, the drive circuit being configured to open and close the first switch element and the second switch element in accordance with a predetermined control signal, and output a drive voltage for driving the switching device to the gate terminal via an output end; a clamp circuit including a third switch element configured to conduct between a reference potential of the drive circuit and a connection point of a path connecting the output end of the drive circuit and the gate terminal based on a comparison result between a threshold potential generated based on the reference potential of the drive circuit and a potential at the connection point; and a ferrite inductor provided immediately near the output end of the drive circuit, and having one end connected to the output end and the other end connected to the connection point.
摘要:
The invention relates to a device (10) for protecting at least one active component of an electronic module, which is suitable for receiving a microwave electromagnetic input signal (E) and for supplying a microwave electromagnetic signal (S) to said at least one active component. Said device (10) comprises a delaying module (22) suitable for applying a predetermined delaying time to the microwave electromagnetic input signal (E), connected in parallel to a switch-triggering device (20) suitable for comparing a level of power of the microwave electromagnetic input signal to a power threshold and for controlling a switching of a switch (36) connected at the output of the delaying module (22), an output of said switch supplying the microwave electromagnetic signal to said at least one active component, the predetermined delaying time being such that the switching is carried out before the arrival of the microwave electromagnetic signal at the output of the delaying module.
摘要:
A gate driver circuit 312 for a power switch is disclosed. The gate driver circuit includes a resistor network 322 coupled to the power switch. The resistor network includes a plurality of resistors. The gate driver circuit further includes a control unit 342 operatively coupled to the resistor network. The control unit 342 is configured to control the resistor network 322 such that the resistor network 322 provides different resistance values in at least two of a delay phase, a commutation phase, and a saturation phase when the power switch is transitioned to a first state. A method for driving the power switch is also disclosed.
摘要:
A method and a parallel connection arrangement for equalizing the output powers of power converter units (INU11,INU12), which power converter units comprise semiconductor switch bridges controlled with pulse width modulation, and which comprise a control unit arrangement (CU1,CU2) for forming control pulses, with which the semiconductor switches are controlled. The control unit arrangement delays the falling edge of the control pulses of at least one semiconductor switch of at least one power converter unit.
摘要:
An electrostatic discharge (ESD) protection circuit (302) in a semiconductor integrated circuit (IC) (100) having protected circuitry. In one embodiment, the ESD protection circuit (302) includes a pad (104), adapted for connection to a protected circuit node of the IC, and an ESD protection device (306), which is coupled between the pad and ground (112). A diode turn-on device (308) is coupled in a forward conduction direction from the pad to a first gate (336) of the ESD protection device. In a second embodiment, the ESD protection circuit (2002) is an SCR having an anode (322) coupled to a first voltage supply line, and a cathode coupled to ground. A parasitic capacitance (2004) is coupled between each the voltage supply line and the grounded cathode.
摘要:
Die Erfindung betrifft ein Verfahren zum Schalten eines elektrischen Verbrauchers. Dabei ist das Verfahren in Verbindung mit einer Schaltvorrichtung (110) zum Schalten eines elektrischen Verbrauchers ausführbar. Die Schaltvorrichtung (110) weist zumindest eine mikroelektromechanische Schalteinrichtung (214) zum Steuern einer Versorgung des elektrischen Verbrauchers mit elektrischem Strom in einem Schaltzustand der Schaltvorrichtung (110) auf. Auch weist die Schaltvorrichtung (110) ein Halbleitersubstrat (212) auf, an dem die zumindest eine mikroelektromechanische Schalteinrichtung (214) angeordnet ist. Ferner weist die Schaltvorrichtung (110) eine Halbleiterschalteinrichtung (216) zum Steuern einer Versorgung des elektrischen Verbrauchers mit elektrischem Strom bei einem Umschaltvorgang der Schaltvorrichtung (110) auf. Hierbei ist die Halbleiterschalteinrichtung (216) in dem Halbleitersubstrat (212) ausgeformt, wobei die Halbleiterschalteinrichtung (216) ausgebildet ist, um eine höhere elektrische Leistung zu schalten als die zumindest eine mikroelektromechanische Schalteinrichtung (214). Das Verfahren weist einen Schritt des Umschaltens der Halbleiterschalteinrichtung (216) von einem ersten Schaltzustand in einen zweiten Schaltzustand auf. Auch weist das Verfahren einen Schritt des Versetzens der zumindest einen mikroelektromechanischen Schalteinrichtung (214) von dem ersten Schaltzustand in den zweiten Schaltzustand auf. Zudem weist das Verfahren einen Schritt des Zurückschaltens der Halbleiterschalteinrichtung (216) von dem zweiten Schaltzustand in den ersten Schaltzustand auf.
摘要:
The present invention concerns The gate drive circuit comprising means (V2, V3) for creating bipolar voltage to a gate (X4) of a IGB transistor and means (V1, C3) for compensating for Miller currents of the IGB transistor. In accordance with the invention the means (V1, C3) for compensating are formed by a switching element (V1) connected in series with a capacitor (C3) between the gate (X4) and supply voltage (10).