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    PIEZOELECTRIC MATERIAL, METHOD FOR MANUFACTURING SAME, PIEZOELECTRIC ELEMENT AND COMBUSTION PRESSURE SENSOR
    5.
    发明公开
    PIEZOELECTRIC MATERIAL, METHOD FOR MANUFACTURING SAME, PIEZOELECTRIC ELEMENT AND COMBUSTION PRESSURE SENSOR 有权
    压电材料，其制造方法，压电元件和燃烧压力传感器

    公开(公告)号：EP3321397A1

    公开(公告)日：2018-05-16

    申请号：EP16821131.6

    申请日：2016-06-01

    申请人： National Institute for Materials Science

    发明人： SHIMAMURA Kiyoshi ,  GARCIA VILLORA Encarnacion Antonia ,  SAKAGUCHI Isao ,  OHASHI Naoki

    IPC分类号： C30B29/34 ,  C30B15/00 ,  C30B33/02 ,  H01L41/113 ,  H01L41/187 ,  H01L41/41 ,  H01L41/43

    CPC分类号： H01L41/1871 ,  C30B15/00 ,  C30B29/34 ,  C30B33/02 ,  H01L41/113 ,  H01L41/1132 ,  H01L41/187 ,  H01L41/41 ,  H01L41/43

    摘要： A piezoelectric material for a combustion pressure sensor, a method for producing the piezoelectric material, and a combustion pressure sensor using the piezoelectric material are provided. The piezoelectric material of the present invention includes a single crystal containing Ca, Ta, an element M (M is Al or Ga), Si, and O, the single crystal has the same crystal structure as the crystal structure of langasite represented by La 3 Ga 5 SiO 14 , and at least the content of the element M is insufficient for the stoichiometric composition represented by Ca 3 TaM 3 Si 2 O 14 . Preferably, in a case where the element M is Ga, each content of the Ca and the Si is excessive for the stoichiometric composition, and in a case where the element M is Al, the content of the Ca is excessive for the stoichiometric composition, and the content of the Ta is insufficient for the stoichiometric composition.

    摘要翻译： 提供了用于燃烧压力传感器的压电材料，用于制造该压电材料的方法以及使用该压电材料的燃烧压力传感器。 本发明的压电材料包括含有Ca，Ta，元素M（M为Al或Ga），Si和O的单晶，该单晶具有与由La 3 Ga 5 SiO 14表示的硅酸镓镧晶体结构相同的晶体结构， 并且至少元素M的含量对于由Ca 3 Ta 3 Si 2 O 14表示的化学计量组成不足。 优选地，在元素M为Ga的情况下，对于化学计量组成，Ca和Si各自的含量过量，并且在元素M为Al的情况下，Ca的含量对于化学计量组成过量， 并且Ta的含量对于化学计量组成不足。

    METHOD FOR PRODUCING LITHIUM NIOBATE SINGLE CRYSTAL SUBSTRATE
    8.
    发明公开
    METHOD FOR PRODUCING LITHIUM NIOBATE SINGLE CRYSTAL SUBSTRATE 审中-公开

    公开(公告)号：EP3366816A1

    公开(公告)日：2018-08-29

    申请号：EP16857128.9

    申请日：2016-06-08

    申请人： Sumitomo Metal Mining Co., Ltd.

    发明人： KAJIGAYA, Tomio

    IPC分类号： C30B29/30 ,  C30B33/02 ,  H01L41/187 ,  H01L41/41

    CPC分类号： H03H9/02921 ,  C30B15/00 ,  C30B29/30 ,  C30B33/02 ,  H01L41/187 ,  H01L41/1873 ,  H01L41/41 ,  H03H3/08 ,  H03H9/02559 ,  H03H9/64

    摘要： To provide a method of producing a lithium niobate (LN) substrate which allows treatment conditions regarding a temperature, a time, and the like to be easily managed and in which an in-plane distribution of a volume resistance value is very small, and also variations in volume resistivity are small among substrates machined from the same ingot.
    A method of producing an LN substrate by using an LN single crystal grown by the Czochralski process, in which a lithium niobate single crystal having a Fe concentration of 50 mass ppm or more and 2000 mass ppm or less in the single crystal and being in a form of an ingot is buried in an Al powder or a mixed powder of Al and Al 2 O 3 , and heat-treated at a temperature of 450°C or more and less than 660°C, which is a melting point of aluminum, to produce a lithium niobate single crystal substrate having a volume resistivity controlled to be within a range of 1×10 8 Ω·cm or more to 2×10 12 Ω·cm or less.

    PIEZOELECTRIC SINGLE CRYSTAL ELEMENT AND METHOD FOR FABRICATING THE SAME
    10.
    发明公开
    PIEZOELECTRIC SINGLE CRYSTAL ELEMENT AND METHOD FOR FABRICATING THE SAME 有权
    压电单晶及其制造方法

    公开(公告)号：EP1744378A4

    公开(公告)日：2010-06-02

    申请号：EP04793393

    申请日：2004-10-29

    申请人： JFE MINERAL CO LTD

    发明人： MATSUSHITA MITSUYOSHI

    IPC分类号： H01L41/18 ,  H01L41/22 ,  C04B35/00 ,  C30B29/32 ,  H01L41/187 ,  H01L41/257 ,  H01L41/338 ,  H01L41/41

    CPC分类号： C30B29/32 ,  H01L41/18 ,  H01L41/257 ,  H01L41/41 ,  Y10T29/42

    摘要： The present invention provides a piezoelectric single crystal device excellent in heat resistance and capable of stably maintaining the electromechanical coupling factor k 31 in a lateral vibration mode at a high value of 50% or more without a decrease even in an operating environment in which the temperature changes from room temperature to a high temperature (specifically, 150°C), and also provides a fabrication method thereof. Specifically, assuming that the [101] axis of a tetragonal system having the [001] axis as a C axis (with the largest lattice constant) is a polarization direction 3, a normal direction 1 to an edge face T of the piezoelectric device is within the solid-angle range of ±25° with respect to the [-101] axis substantially orthogonal to the polarization direction 3, the range including the [-101] axis. Assuming that the [011] axis of the tetragonal system is the polarization direction 3, the normal direction 1 to the edge face T of the piezoelectric device is within the solid-angle range of ±25° with respect to the [0-11] axis substantially orthogonal to the polarization direction 3, the range including the [0-11] axis. In any case, the electromechanical coupling factor k 31 in the direction orthogonal to the polarization direction 3, i.e., in the lateral vibration mode, is 50% or more.