公开(公告)号：EP4287275A1

公开(公告)日：2023-12-06

申请号：EP22767360.5

申请日：2022-02-18

申请人： Jusung Engineering Co., Ltd.

发明人： KIM, Jae Ho ,  HWANG, Chul Joo

IPC分类号： H01L31/074 ,  H01L31/0224 ,  H01L31/078 ,  H01L31/0687 ,  H01L31/18 ,  H01L51/42 ,  H01L51/44

摘要： The present invention provides a solar cell, including: a semiconductor substrate; a first semiconductor layer provided on one surface of the semiconductor substrate; a second semiconductor layer provided on one surface of the first semiconductor layer; a third semiconductor layer provided on one surface of the second semiconductor layer; a first transparent conductive layer provided on one surface of the third semiconductor layer; and a first electrode provided on one surface of the first transparent conductive layer, wherein the second semiconductor layer includes a p-type semiconductor layer, and the third semiconductor layer includes a p+-type semiconductor layer including W, and a method of manufacturing the solar cell.

公开(公告)号：EP2828897B1

公开(公告)日：2022-02-23

申请号：EP12871937.4

申请日：2012-12-19

发明人： SWANSON, Richard M. ,  BUNEA, Marius M. ,  SMITH, David D. ,  SHEN, Yu-Chen ,  COUSINS, Peter J. ,  DENNIS, Tim

IPC分类号： H01L31/18 ,  H01L31/074

公开(公告)号：EP3295490B1

公开(公告)日：2020-03-18

申请号：EP16730517.6

申请日：2016-05-06

申请人： Instytut Fizyki Pan

发明人： GIERALTOWSKA, Sylwia ,  GODLEWSKI, Marek ,  PIETRUSZKA, Rafal ,  WACHNICKI, Lukasz ,  WITKOWSKI, Bartlomiej

IPC分类号： H01L31/0224 ,  H01L31/0236 ,  H01L31/074 ,  H01L31/18

公开(公告)号：EP3321974A1

公开(公告)日：2018-05-16

申请号：EP17200439.2

申请日：2017-11-07

申请人： Samsung Electronics Co., Ltd.

发明人： JO, Sanghyun ,  LEE, Jaeho ,  LEE, Eunkyu ,  PARK, Seongjun ,  LEE, Kiyoung ,  HEO, Jinseong

IPC分类号： H01L31/0264 ,  H01L31/074

摘要： Example embodiments relate to an image sensor configured to achieve a high photoelectric conversion efficiency and a low dark current. The image sensor includes first and second electrodes, a plurality of photodetection layers provided between the first and second electrodes, and an interlayer provided between the photodetection layers. The photodetection layers convert incident light into an electrical signal and include a semiconductor material. The interlayer includes a metallic or semi metallic material having anisotropy in electrical conductivity.

摘要翻译： 示例实施例涉及被配置为实现高光电转换效率和低暗电流的图像传感器。 图像传感器包括第一和第二电极，设置在第一和第二电极之间的多个光电检测层以及设置在光电检测层之间的中间层。 光检测层将入射光转换成电信号并且包括半导体材料。 中间层包括具有电导率各向异性的金属或半金属材料。

公开(公告)号：EP2709167A3

公开(公告)日：2017-10-18

申请号：EP13184436.7

申请日：2013-09-13

申请人： The Boeing Company

发明人： King, Richard R ,  Fetzer, Christopher M ,  Nasser, Karam H

IPC分类号： H01L31/0725 ,  H01L31/078 ,  H01L31/0687 ,  H01L31/074 ,  H01L31/0745

CPC分类号： H01L31/0725 ,  H01L31/0687 ,  H01L31/074 ,  H01L31/0745 ,  H01L31/078 ,  Y02E10/544

摘要： Device structures, apparatuses, and methods are disclosed for photovoltaic cells that may be a single-junction or multijunction solar cells, with at least a first layer comprising a group-IV semiconductor in which part of the cell comprises a second layer comprising a III-V semiconductor or group-IV semiconductor having a different composition than the group-IV semiconductor of the first layer, such that a heterostructure is formed between the first and second layers.

公开(公告)号：EP2709163A3

公开(公告)日：2017-10-18

申请号：EP13184428.4

申请日：2013-09-13

申请人： The Boeing Company

发明人： King, Richard R ,  Fetzer, Christopher M ,  Nasser, Karam H

IPC分类号： H01L31/0687 ,  H01L31/0725 ,  H01L31/074 ,  H01L31/078 ,  H01L31/0745

CPC分类号： H01L31/078 ,  H01L31/0687 ,  H01L31/0725 ,  H01L31/074 ,  H01L31/0745 ,  Y02E10/544 ,  Y02P70/521

摘要： Device structures, apparatuses, and methods are disclosed for photovoltaic cells that may be a single-junction or multijunction solar cells, with at least a first layer comprising a group-IV semiconductor in which part of the cell comprises a second layer comprising a III-V semiconductor or group-IV semiconductor having a different composition than the group-IV semiconductor of the first layer, such that a heterostructure is formed between the first and second layers.

公开(公告)号：EP3182468A1

公开(公告)日：2017-06-21

申请号：EP16204642.9

申请日：2016-12-16

申请人： LG ELECTRONICS INC.

发明人： Lee, Kyoungsoo ,  Park, Sangwook ,  Lee, Jinhyung

IPC分类号： H01L31/074 ,  H01L31/0747 ,  H01L31/18

CPC分类号： H01L31/1884 ,  H01L31/02167 ,  H01L31/022433 ,  H01L31/022475 ,  H01L31/022483 ,  H01L31/02366 ,  H01L31/072 ,  H01L31/074 ,  H01L31/0747 ,  H01L31/18 ,  Y02E10/50

摘要： Disclosed herein are a solar cell and a method of manufacturing the same. The solar cell module includes a semiconductor substrate, a first passivation film located on the front surface of the semiconductor substrate, a second passivation film located on the rear surface of the semiconductor substrate, a front electric field region located on the first passivation film on the front surface of the semiconductor substrate and being of the same conductivity-type as that of the semiconductor substrate, an emitter region located on the second passivation film on the rear surface of the semiconductor substrate and being of the conductivity-type opposite that of the semiconductor substrate, first electrodes conductively connected to the front electric field region, and second electrode conductively connected to the emitter region.

摘要翻译： 本文公开了一种太阳能电池及其制造方法。 该太阳能电池模块包括：半导体衬底;位于半导体衬底的前表面上的第一钝化膜;位于半导体衬底的后表面上的第二钝化膜;位于第一钝化膜上的前电场区域， 所述半导体衬底的前表面具有与所述半导体衬底相同的导电类型;发射极区域，位于所述半导体衬底的后表面上的所述第二钝化膜上，并且与所述半导体的导电类型相反 衬底，导电连接到前电场区的第一电极，以及导电连接到发射区的第二电极。

公开(公告)号：EP2787535A3

公开(公告)日：2014-12-10

申请号：EP14160368.8

申请日：2014-03-17

申请人： Samsung SDI Co., Ltd.

发明人： Lee, Cho-Young ,  Oh, Min-Seok ,  Lee, Yun-Seok ,  Hong, Jun-Ki

IPC分类号： H01L31/0336 ,  H01L31/18 ,  H01L31/074

CPC分类号： H01L31/1884 ,  H01L31/0336 ,  H01L31/074 ,  H01L31/18 ,  Y02E10/50

摘要： A solar cell includes an optical absorption layer; a buffer layer on the optical absorption layer, the buffer layer having a band gap energy gradient; and a transparent electrode layer on the buffer layer, wherein a band gap energy of a lower surface of the buffer layer is higher than a band gap energy of an upper surface of the buffer layer.

公开(公告)号：EP2709165A2

公开(公告)日：2014-03-19

申请号：EP13184421.9

申请日：2013-09-13

申请人： The Boeing Company

发明人： King, Richard R ,  Fetzer, Christopher M ,  Nasser, Karam H

IPC分类号： H01L31/0725 ,  H01L31/074 ,  H01L31/078

CPC分类号： H01L31/078 ,  H01L31/0687 ,  H01L31/0725 ,  H01L31/074 ,  H01L31/0745 ,  Y02E10/544 ,  Y02P70/521

摘要： Device structures, apparatuses, and methods are disclosed for photovoltaic cells that may be a single-junction or multijunction solar cells, with at least as first layer comprising a group-IV semiconductor in which part of the cell comprises a second layer comprising a III-V semiconductor or group-IV semiconductor having a different composition than the group-IV semiconductor of the first layer, such that a heterostructure is formed between the first and second layers.

摘要翻译： 公开了用于可以是单结或多结太阳能电池的光伏电池的装置结构，装置和方法，至少具有包含IV族半导体的第一层，其中部分电池包括第二层，其包含III- V半导体或IV族半导体，其组成不同于第一层的IV族半导体，使得在第一层和第二层之间形成异质结构。

公开(公告)号：EP4345913A1

公开(公告)日：2024-04-03

申请号：EP22831895.2

申请日：2022-06-24

申请人： Anhui Huasun Energy Co., Ltd.

发明人： XIN, Ke ,  ZHOU, Su ,  GONG, Daoren ,  WANG, Wenjing ,  XU, Xiaohua ,  MEI, Zhigang ,  YANG, Long

IPC分类号： H01L31/0224 ,  H01L31/0288 ,  H01L31/074 ,  H01L31/18 ,  H01L31/072 ,  H01L31/052

摘要： The present application provides a heterojunction solar cell and a preparation method therefor. The heterojunction solar cell comprises: a semiconductor substrate layer; and a back composite transparent conductive film located on one side of the semiconductor substrate layer. The back surface composite transparent conductive film comprises: a first back surface transparent conductive film; and a second back transparent conductive film located on the side surface of the first back transparent conductive film facing away from the semiconductor substrate layer. Both the first back transparent conductive film and the second back transparent conductive film are doped with group III heavy atoms, and the concentration of the group III heavy atoms in the second back transparent conductive film is less than that of the group III heavy atoms in the first back transparent conductive film. By means of the technical solution, both the photoelectric conversion efficiency and the packaging performance of the heterojunction solar cell are improved.