利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

655 条记录 (耗时 0.05 秒)

    Application/development device, application/development method, and storage medium
    91.
    发明专利
    Application/development device, application/development method, and storage medium 有权
    应用/开发设备，应用/开发方法和存储介质

    公开(公告)号：JP2012023306A

    公开(公告)日：2012-02-02

    申请号：JP2010161987

    申请日：2010-07-16

    申请人： Tokyo Electron Ltd ,  東京エレクトロン株式会社

    发明人： MATSUOKA NOBUAKI ,  MIYATA AKIRA ,  HAYASHI SHINICHI ,  ENOKIDA SUGURU

    IPC分类号： H01L21/027 ,  H01L21/677

    CPC分类号： H01L21/67178 ,  G03F7/16 ,  G03F7/162 ,  G03F7/30 ,  G03F7/3021 ,  H01L21/67184 ,  H01L21/67225 ,  H01L21/6723

    摘要： PROBLEM TO BE SOLVED: To suppress occurrence of abnormality in an unit block and deterioration of the throughput of an application/development device when performing maintenance, and to suppress the installation area of a processing block.SOLUTION: The application/development device comprises: delivery parts for application processing to be provided between stacked unit blocks for pre-stage processing and respective stacked unit blocks for post-stage processing and to deliver substrates between transport mechanisms of both unit blocks; an auxiliary transfer mechanism provided so as to elevate and lower freely in order to convey the substrates between the delivery parts for application processing of each stage; unit blocks for development stacked on the unit blocks for the pre-stage processing and the unit blocks for post-stage processing respectively. Substrate delivery between respective layers can avoid unusable unit blocks to convey substrates. In addition, the unit blocks for development stacked on the unit blocks for the pre-stage processing and the unit blocks for post-stage processing can suppress an installation area thereof.

    摘要翻译： 要解决的问题：为了抑制单元块中的异常发生和进行维护时的应用/开发装置的吞吐量的劣化，并且抑制处理块的安装面积。 解决方案：应用/开发设备包括：用于在用于前级处理的堆叠单元块之间提供应用处理的传送部件和用于后级处理的相应堆叠单元块，并且在两个单元块的传输机构之间传送基板 ; 辅助传送机构，其被设置为自由地升高和降低，以便在每个阶段的施加处理的输送部件之间输送基板; 分别用于前级处理的单位块上堆叠的开发单元块和用于后阶段处理的单元块。 各层之间的基板传送可以避免不可用的单元块传送基板。 此外，堆叠在用于前级处理的单位块上的用于开发的单元块和用于后阶段处理的单元块可以抑制其安装面积。 版权所有（C）2012，JPO＆INPIT

    Coating development device and coating development method
    94.
    发明专利
    Coating development device and coating development method 有权
    涂料开发设备和涂料开发方法

    公开(公告)号：JP2011082352A

    公开(公告)日：2011-04-21

    申请号：JP2009233583

    申请日：2009-10-07

    申请人： Tokyo Electron Ltd ,  東京エレクトロン株式会社

    发明人： MATSUOKA NOBUAKI

    IPC分类号： H01L21/027 ,  H01L21/677

    CPC分类号： G03F7/16 ,  G03F7/162 ,  G03F7/30 ,  G03F7/3021

    摘要： PROBLEM TO BE SOLVED: To provide a coating development device and a coating development method that perform liquid processing on respective substrates of a substrate group comprising a plurality of substrates one after another, and shorten a processing time even when different process flows share one liquid processing module. SOLUTION: The coating development device includes: a first liquid processing module M4 that performs first liquid processing on the respective substrates one after another using a first chemical and performs second liquid processing on the respective substrates one after another using the first chemical again; a buffer module BUF where the substrates after the first liquid processing and before the second liquid processing are temporarily stored one after another; and a second liquid processing module M5 that performs third liquid processing, using a second chemical, on the respective substrates to be subjected to the second liquid processing one after another after taking the substrates out of the buffer module BUF. Here, the third liquid processing on an initial substrate of the substrate group is started before the first liquid processing on a final substrate of the substrate group ends so that the second liquid processing on the initial substrate can be performed immediately after the first liquid processing on the final substrate. COPYRIGHT: (C)2011,JPO&INPIT

    摘要翻译： 要解决的问题：提供一种涂布显影装置和涂布显影方法，其在相继的包括多个基板的基板组的各个基板上进行液体处理，并且即使在不同的工艺流程共享时也缩短处理时间 一个液体处理模块。 解决方案：涂料开发装置包括：第一液体处理模块M4，其使用第一化学品依次对各个基板进行第一液体处理，并且使用第一化学品再次对各个基板进行第二液体处理 ; 缓冲模块BUF，其中在第一液体处理之后和第二液体处理之前的基板被一个接一个地暂时存储; 以及第二液体处理模块M5，其在将基板从缓冲模块BUF中取出之后，依次进行第二液体处理的第二液体处理，使用第二化学品进行第二液体处理。 这里，在基板组的最终基板上的第一液体处理之前开始基板组的初始基板上的第三液体处理，从而可以在第一液体处理之后立即执行初始基板上的第二液体处理 最终的底物。 版权所有（C）2011，JPO＆INPIT

    Pattern forming method, for multiple development used in the pattern forming method The positive resist composition, the pattern negative development for the developing solution used for the formation method and the pattern forming negative development rinse solution used in the method
    98.
    发明专利
    Pattern forming method, for multiple development used in the pattern forming method The positive resist composition, the pattern negative development for the developing solution used for the formation method and the pattern forming negative development rinse solution used in the method 有权

    公开(公告)号：JP4554665B2

    公开(公告)日：2010-09-29

    申请号：JP2007325915

    申请日：2007-12-18

    申请人： 富士フイルム株式会社

    发明人： 英明 椿 ,  慎一 漢那

    IPC分类号： G03F7/32 ,  G03F7/038 ,  G03F7/039

    CPC分类号： G03F7/325 ,  G03F7/038 ,  G03F7/039 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/16 ,  G03F7/2002 ,  G03F7/2024 ,  G03F7/30 ,  G03F7/32 ,  G03F7/40 ,  Y10T428/24802

    摘要： The present invention is directed to a pattern forming method, comprising: applying, to a substrate, a resist composition of which solubility in a positive developer which is an alkali developer increases and solubility in a negative developer containing an organic solvent decreases upon irradiation with actinic rays or radiation, so as to form a resist film; exposing the resist film; and developing the resist film with the negative developer, wherein the resist composition contains a resin having a monocyclic or polycyclic alicyclic hydrocarbon structure and being capable of increasing a solubility of the resin in an alkali developer and decreasing a solubility of the resin in an organic solvent under an action of an acid, and the resin contains at least one member selected from the group consisting of a repeating unit having an alicyclic hydrocarbon-containing partial structure represented by any one of the following formulae (pI) to (pV): in formulae (pI) to (pV), R 11 represents a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, an isobutyl group or a sec-butyl group; Z represents an atomic group necessary for forming a cycloalkyl group together with the carbon atom; R 12 to R 16 each independently represents a linear or branched alkyl group having a carbon number of 1 to 4 or a cycloalkyl group, provided that at least one of R 12 to R 14 or either one of R 15 and R 16 represents a cycloalkyl group; R 17 to R 21 each independently represents a hydrogen atom, a linear or branched alkyl group having a carbon number of 1 to 4 or a cycloalkyl group, provided that at least one of R 17 to R 21 represents a cycloalkyl group and that either one of R 19 and R 21 represents a linear or branched alkyl group having a carbon number of 1 to 4 or a cycloalkyl group; R 22 to R 25 each independently represents a hydrogen atom, a linear or branched alkyl group having a carbon number of 1 to 4 or a cycloalkyl group, provided that at least one of R 22 to R 25 represents a cycloalkyl group; and R 23 and R 24 may combine with each other to form a ring.

    Method of manufacturing semiconductor device
    99.
    发明专利
    Method of manufacturing semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：JP2010192935A

    公开(公告)日：2010-09-02

    申请号：JP2010117926

    申请日：2010-05-24

    申请人： Semiconductor Energy Lab Co Ltd ,  株式会社半導体エネルギー研究所

    发明人： YAMAZAKI SHUNPEI ,  SHIINA YASUKO ,  ARAI YASUYUKI

    IPC分类号： H01L21/336 ,  G03F7/00 ,  G03F7/16 ,  H01L21/027 ,  H01L21/28 ,  H01L21/3213 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786

    CPC分类号： H01L27/1214 ,  G03F7/0007 ,  G03F7/16 ,  H01L27/1288

    摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing resist patterns for aiming at reducing manufacturing costs by improving the efficiency of using resist materials, and to provide a method of removing resist patterns and a method of manufacturing semiconductor devices. SOLUTION: The method of manufacturing the semiconductor devices includes a step of discharging a composition including a photosensitizer onto a workpiece to form a resist pattern under reduced pressure. Also, the method includes a step of etching the workpiece with the resist pattern as a mask, or a step of irradiating the resist pattern with light in a photosensitive wavelength range of the photosensitizer via a photomask, a step of etching the workpiece with the resist pattern as a mask, and a step of removing the resist pattern on the workpiece. COPYRIGHT: (C)2010,JPO&INPIT

    摘要翻译： 解决的问题：提供一种制造抗蚀剂图案的方法，其目的在于通过提高使用抗蚀剂材料的效率来降低制造成本，并提供去除抗蚀剂图案的方法和制造半导体器件的方法。 解决方案：制造半导体器件的方法包括将包含光敏剂的组合物放电到工件上以在减压下形成抗蚀剂图案的步骤。 此外，该方法包括以抗蚀剂图案作为掩模蚀刻工件的步骤，或通过光掩模在光敏剂的光敏波长范围内用光照射抗蚀剂图案的步骤，用抗蚀剂蚀刻工件的步骤 图案作为掩模，以及去除工件上的抗蚀剂图案的步骤。 版权所有（C）2010，JPO＆INPIT