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    Method of driving semiconductor light-emitting element, light-emitting device, and optical pulse tester using the light-emitting device
    12.
    发明专利
    Method of driving semiconductor light-emitting element, light-emitting device, and optical pulse tester using the light-emitting device 有权
    使用发光装置驱动半导体发光元件，发光器件和光学脉冲检测器的方法

    公开(公告)号：JP2012064921A

    公开(公告)日：2012-03-29

    申请号：JP2011113132

    申请日：2011-05-20

    Applicant: Anritsu Corp ,  アンリツ株式会社

    Inventor： MORIMOTO SHINTARO ,  MORI HIROSHI ,  NAGASHIMA YASUAKI

    IPC: H01S5/026 ,  H01S5/0625 ,  H01S5/125

    CPC classification number: H01S5/4087 ,  B82Y20/00 ,  H01S5/0287 ,  H01S5/1021 ,  H01S5/1092 ,  H01S5/1203 ,  H01S5/34306

    Abstract: PROBLEM TO BE SOLVED: To provide a method of driving a semiconductor light-emitting element that enables a semiconductor light-emitting element, which can emit light having a plurality of wavelength bands, to operate with high optical output, and to provide a light-emitting device, and a small-sized and high-performance optical pulse tester using the light-emitting device.SOLUTION: There is provided a method of driving a semiconductor light-emitting element, the semiconductor light-emitting element having a structure in which an active layer 13a having a gain wavelength λin the 1.55 μm band and an active layer 13b having a gain wavelength λin the 1.3 μm band are optically coupled with each other in the light waveguide direction and arranged in series in the order of the length of the gain wavelengths λand λ, and in which a diffraction grating 20 with a Bragg wavelength equal to the shorter gain wavelength λis formed in the vicinity of the active layer 13b having the shorter gain wavelength λand in the vicinity of a butt joint coupling part 19 between the active layer 13a and the active layer 13b. An upper electrode provided above the active layer 13b and a lower electrode provided on a bottom surface of a semiconductor substrate are short-circuited so that a leakage current does not flow into the active layer 13b when a driving current is applied to the active layer 13a.

    Abstract translation: 解决的问题：提供一种驱动半导体发光元件的方法，该半导体发光元件使得能够发射具有多个波长带的光的半导体发光元件能够以高的光输出工作，并且提供 发光装置和使用该发光装置的小型和高性能的光脉冲测试仪。 解决方案：提供一种驱动半导体发光元件的方法，该半导体发光元件具有这样的结构，其中具有增益波长λ 1的有源层13a， 在1.3μm带中具有增益波长λ 2 的有源层13b在光波导方向上彼此光耦合并且串联布置 按照增益波长λ 1 和λ 2 的长度的顺序，其中具有布拉格的衍射光栅20 等于较短增益波长的波长λ 2 形成在具有较短增益波长λ 2 的有源层13b附近， 并且在有源层13a和有源层13b之间的对接接合部分19附近。 设置在有源层13b上方的上电极和设置在半导体衬底的底表面上的下电极短路，使得当向有源层13a施加驱动电流时，漏电流不流入有源层13b 。 版权所有（C）2012，JPO＆INPIT

    Ii-vi laser diode with facet degradation reduction structure
    17.
    发明专利
    Ii-vi laser diode with facet degradation reduction structure 审中-公开
    II-VI激光二极管与减少降解结构

    公开(公告)号：JP2010010713A

    公开(公告)日：2010-01-14

    申请号：JP2009235653

    申请日：2009-10-09

    Applicant: 3M Co ,  スリーエム カンパニー

    Inventor： HAASE MICHAEL A ,  BAUDE PAUL F

    IPC: H01S5/026 ,  H01S5/10 ,  H01S5/028 ,  H01S5/042 ,  H01S5/0625 ,  H01S5/16 ,  H01S5/323 ,  H01S5/347

    CPC classification number: B82Y20/00 ,  H01S5/0264 ,  H01S5/028 ,  H01S5/0425 ,  H01S5/0625 ,  H01S5/16 ,  H01S5/347

    Abstract: PROBLEM TO BE SOLVED: To reduce facet degradation of a II-VI semiconductor laser diode having a semiconductor body comprising a plurality of semiconductor layers forming a pn junction, a facet at one end of the body, and a reference electrode.
    SOLUTION: The laser diode 10 further includes a facet degradation reduction electrode 50 located adjacent to the facet 34. The facet degradation reduction electrode 50 is electrically isolated from a forward bias electrode 40. The facet degradation reduction electrode 50 is used to establish an electric field sufficient to reduce facet degradation. In one embodiment, this electric field is established by applying a reverse-bias voltage VRB between the facet degradation reduction electrode 50 and the reference electrode 32. In another embodiment, this electric field is established by electrically connecting the facet degradation reduction electrode 50 to the reference electrode 32.
    COPYRIGHT: (C)2010,JPO&INPIT

    Abstract translation: 要解决的问题：为了减少具有半导体主体的II-VI半导体激光二极管的小面劣化，该半导体主体包括形成pn结的多个半导体层，在主体一端的小面和参考电极。 解决方案：激光二极管10还包括邻近小面34定位的小面降解还原电极50.小面降解还原电极50与正向偏置电极40电绝缘。小面降解还原电极50用于建立 足以减少小面退化的电场。 在一个实施例中，通过在小面降解还原电极50和参考电极32之间施加反向偏置电压VRB来建立该电场。在另一个实施例中，该电场是通过将小面降解还原电极50与 参考电极32.版权所有（C）2010，JPO＆INPIT

    Semiconductor laser device and semiconductor optical integrated device
    18.
    发明专利
    Semiconductor laser device and semiconductor optical integrated device 审中-公开
    半导体激光器件和半导体光学集成器件

    公开(公告)号：JP2009188262A

    公开(公告)日：2009-08-20

    申请号：JP2008027970

    申请日：2008-02-07

    Applicant: Sumitomo Electric Ind Ltd ,  住友電気工業株式会社

    Inventor： KATO TAKASHI

    IPC: H01S5/12 ,  H01S5/026 ,  H01S5/0625 ,  H01S5/50

    CPC classification number: H01S5/06258 ,  H01S5/1039 ,  H01S5/1203 ,  H01S5/1215

    Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor laser device and optical integrated semiconductor device which continuously change the lasing wavelength while suppressing mode hopping more reliably.
    SOLUTION: A distributed feedback semiconductor laser device 10 in which the lasing wavelength is changed includes: a semiconductor layer portion 20 including a first active layer 20A, a second active layer 20B, and an intermediate layer 20C that optically couples the first active layer and the second active layer, the first active layer, the intermediate layer, and the second active layer being arranged in this order in a predetermined axis direction; a diffraction grating 26 that is optically coupled with the first active layer 20A and the second active layer 20B of the semiconductor layer portion 20; a first electrode 28A for injecting carriers into the first active layer 20A; a second electrode 28B for injecting carriers into the second active layer 20B; and a third electrode 28C for supplying the intermediate layer 20C with electric current, wherein the diffraction grating 26 extends in the predetermined axis direction, and a period Λ of the diffraction grating is uniform in the predetermined axis direction.
    COPYRIGHT: (C)2009,JPO&INPIT

    Abstract translation: 要解决的问题：提供一种半导体激光器件和光学集成半导体器件，其可以更可靠地抑制模式跳变而连续地改变激光波长。 解决方案：其中激光波长改变的分布式反馈半导体激光器件10包括：包括第一有源层20A，第二有源层20B和中间层20C的半导体层部分20，其将第一有源层 层和所述第二活性层，所述第一有源层，所述中间层和所述第二有源层按所述顺序排列在预定的轴向上; 与半导体层部分20的第一有源层20A和第二有源层20B光学耦合的衍射光栅26; 用于将载体注入到第一有源层20A中的第一电极28A; 用于将载体注入第二有源层20B的第二电极28B; 以及用于向中间层20C供给电流的第三电极28C，其中，衍射光栅26在规定的轴方向上延伸，衍射光栅的周期Λ在规定的轴方向上是均匀的。 版权所有（C）2009，JPO＆INPIT

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