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    Cleaning agent and cleaning method for electronic material
    27.
    发明专利
    Cleaning agent and cleaning method for electronic material 有权
    电子材料清洁剂和清洗方法

    公开(公告)号：JP2009203471A

    公开(公告)日：2009-09-10

    申请号：JP2009018989

    申请日：2009-01-30

    申请人： Sanyo Chem Ind Ltd ,  三洋化成工業株式会社

    发明人： KATSUKAWA YOSHITAKA ,  SUZUKI KAZUMICHI

    IPC分类号： C11D1/04 ,  B08B3/08 ,  C11D1/06 ,  C11D1/14 ,  C11D1/22 ,  C11D1/29 ,  C11D1/34 ,  C11D3/18 ,  C11D3/20 ,  C11D3/37 ,  C11D3/43 ,  C11D7/34 ,  H01L21/304

    摘要： PROBLEM TO BE SOLVED: To provide a cleaning agent for an electronic material having a low forming property and an excellent foam disappearing property, and capable of attaining excellent particle removability and rinsing performance. SOLUTION: This cleaning agent for the electronic material contains an anionic surfactant A comprising one or more cationic components selected from the group comprising an anionic component having specified structure, an alkali metal cation, an alkaline earth metal cation, a 0-25C ammonium cation, and a cation of a specified amine or diamine added with proton, and has 50 mm or less of foaming force of 0.2 wt.% of aqueous solution of the anionic surfactant A measured at 20°C by a Ross-Miles test, and 5 mm or less of foam stability. COPYRIGHT: (C)2009,JPO&INPIT

    摘要翻译： 要解决的问题：提供具有低成型性和优异的消泡性的电子材料用清洗剂，能够获得优异的除尘性和漂洗性能。 该电子材料用清洗剂含有阴离子性表面活性剂A，其含有选自包含具有规定结构的阴离子性成分，碱金属阳离子，碱土金属阳离子，0〜25℃的一种以上的阳离子成分 铵阳离子和加有质子的特定胺或二胺的阳离子，并且通过Ross-Miles试验在20℃下测量的阴离子表面活性剂A的水溶液的发泡力为50重量％以下的发泡力为50mm以下， 和5mm以下的泡沫稳定性。 版权所有（C）2009，JPO＆INPIT

    Cleaning liquid and cleaning method using the same
    29.
    发明专利
    Cleaning liquid and cleaning method using the same 有权
    清洁液体和清洁方法

    公开(公告)号：JP2009111409A

    公开(公告)日：2009-05-21

    申请号：JP2008329871

    申请日：2008-12-25

    申请人： Hitachi Ulsi Systems Co Ltd ,  Mitsubishi Gas Chem Co Inc ,  Renesas Technology Corp ,  三菱瓦斯化学株式会社 ,  株式会社ルネサステクノロジ ,  株式会社日立超エル・エス・アイ・システムズ

    发明人： TSUGANE MASARU ,  KOKUNI MASAKI ,  MATSUNAGA HIROTSUGU ,  KIMURA YOSHIYA

    IPC分类号： H01L21/304 ,  C11D1/34 ,  C11D3/04 ,  C11D3/26 ,  C11D7/08 ,  C11D7/32 ,  C11D17/08

    摘要： PROBLEM TO BE SOLVED: To provide a cleaning liquid with which etching residues remaining after a dry etching in a wiring process of a semiconductor device or a display device subjected to a copper wiring to be used for a semiconductor integrated circuit, or the like can perfectly be removed in a short period of time, and a copper wiring material, insulation film material or the like cannot be oxidized or corroded.
    SOLUTION: The cleaning liquid is characterized in that it deposits the copper wiring 1, a silicon nitride film 2 and a silicon oxide film 3 on a substrate, applies a resist on it, after development, continuously performs dry etching, removes the remaining resist and after that, cleans the etching residue 4, in the cleaning acid, nitric acid concentration is 0.005-5 wt.%, sulphuric acid concentration is 0.001-10 wt.%, sulphuric acid/nitric acid ratio by weight is 1-100, concentration of fluorine compound is 0.005-10 wt.%, and concentration of water whose pH is adjusted to 3-7 by adding basic compound is ≥80 wt.%.
    COPYRIGHT: (C)2009,JPO&INPIT

    摘要翻译： 要解决的问题：为了提供一种清洁液体，在半导体器件或经受用于半导体集成电路的铜布线的显示器件的布线工艺中干蚀刻后留下的残留残留物，或者 可以在短时间内完全去除，铜布线材料，绝缘膜材料等不能被氧化或腐蚀。 解决方案：清洗液的特征在于，其在基板上沉积铜布线1，氮化硅膜2和氧化硅膜3，在其上施加抗蚀剂，显影后，连续进行干法蚀刻，除去 剩余的抗蚀剂，然后清洗蚀刻残渣4，在清洗酸中，硝酸浓度为0.005-5重量％，硫酸浓度为0.001-10重量％，硫酸/硝酸重量比为1- 100，氟化合物的浓度为0.005〜10重量％，通过添加碱性化合物将pH调节至3-7的水的浓度为≥80重量％。 版权所有（C）2009，JPO＆INPIT