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公开(公告)号：JP2007053762A
公开(公告)日：2007-03-01
申请号：JP2006221434
申请日：2006-08-15
发明人： KIM TAE WOOK , KIM BONKEE , LEE KWYRO
CPC分类号： H03F1/34 , H03F1/223 , H03F1/3205 , H03F2200/162 , H03F2200/36 , H03F2200/366 , H03F2200/432
摘要： PROBLEM TO BE SOLVED: To provide an amplifier circuit which is improved in linearity and used for a wide frequency band.
SOLUTION: The amplifier circuit comprises an amplification block comprising a main transistor comprising first, second and third terminals, wherein a current flow from the second terminal to the third terminal changes according to a voltage applied to the first terminal, an auxiliary transistor comprising fourth, fifth and sixth terminals, wherein a current flow from the fifth terminal to the sixth terminal changes according to a voltage applied to the fourth terminal, a main transistor bias unit applying a bias to make the main transistor operate in a saturation region, and an auxiliary transistor bias unit applying a bias to make the auxiliary transistor operate in a sub-threshold region, wherein the second and fifth terminals are electrically connected to each other and the first and fourth terminals are electrically connected to an input port, a first feedback block electrically connected to the third terminal, and a second feedback block electrically connected to the sixth terminal.
COPYRIGHT: (C)2007,JPO&INPIT摘要翻译： 要解决的问题：提供一种线性改善并用于宽频带的放大器电路。 解决方案：放大器电路包括一个放大块，它包括一个包括第一，第二和第三端子的主晶体管，其中从第二端子到第三端子的电流根据施加到第一端子的电压而变化，辅助晶体管 包括第四，第五和第六端子，其中从第五端子到第六端子的电流根据施加到第四端子的电压而变化，主晶体管偏置单元施加偏压以使主晶体管在饱和区域中工作， 以及辅助晶体管偏置单元，施加偏置以使辅助晶体管工作在次阈值区域，其中第二和第五端子彼此电连接，并且第一和第四端子电连接到输入端口，第一端子 电连接到第三端子的反馈块和与第六项电连接的第二反馈块 伊纳勒。 版权所有（C）2007，JPO＆INPIT
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公开(公告)号：JP2006148268A
公开(公告)日：2006-06-08
申请号：JP2004332527
申请日：2004-11-17
发明人： KATO ICHIRO
CPC分类号： H01L23/66 , H01L24/06 , H01L24/48 , H01L24/49 , H01L2223/665 , H01L2224/05553 , H01L2224/05599 , H01L2224/0603 , H01L2224/4813 , H01L2224/48195 , H01L2224/48227 , H01L2224/49111 , H01L2224/49171 , H01L2224/85399 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01015 , H01L2924/01023 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , H01L2924/014 , H01L2924/1305 , H01L2924/14 , H01L2924/1423 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/19105 , H01L2924/19107 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H01L2924/30111 , H03F3/195 , H03F3/21 , H01L2224/45099 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a high frequency module capable f producing a high frequency amplifier amplifying an arbitrary frequency band with a common substrate. SOLUTION: A semiconductor chip 213 having a high frequency semiconductor element secured to a substrate 212 is wired to a conductor pattern formed on the substrate 212 by a bonding wire, and the bonding wire is connected to a bonding position J in the way of a distributed constant line formed by the conductor pattern so that a first inductor L22 and a second inductor L23 are handled separately and subjected to frequency matching or output load matching. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译： 要解决的问题：提供一种能够产生利用公共基板放大任意频带的高频放大器的高频模块。 解决方案：通过接合线将具有固定到基板212的高频半导体元件的半导体芯片213布线到形成在基板212上的导体图案，并且接合线以连接方式连接到接合位置J 由导体图案形成的分布常数线，使得第一电感器L22和第二电感器L23分别被处理并进行频率匹配或输出负载匹配。 版权所有（C）2006，JPO＆NCIPI
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公开(公告)号：JP2005347949A
公开(公告)日：2005-12-15
申请号：JP2004163476
申请日：2004-06-01
发明人： HASEGAWA YASUMASA
摘要： PROBLEM TO BE SOLVED: To provide a differential amplification circuit constituting a CMFB loop with phase compensation applied so that an in-phase output potential can be stably set to a desired set potential, and capable of spreading a bandwidth.
SOLUTION: The differential amplification circuit converts from voltage to current by an input transconductor 1, again converts the signal current from current to voltage by an output transconductor 2 constituting equivalent resistance on an output part for setting a voltage gain with a ratio of input and output transconductance values. Phase compensation capacitances C
1 and C
2 of an in-phase feedback circuit 3 for determining an in-phase output potential are connected between the source terminal of a diode-connected MOS transistor forming the output transconductor 2 and the output terminal of the in-phase feedback circuit 3 instead of a differential output terminal. Thus, the phase compensation of an in-phase feedback loop is realized without the phase compensation capacitances C
1 and C
2 serving as differential output loads, and without decreasing a band of the differential amplification circuit.
COPYRIGHT: (C)2006,JPO&NCIPI摘要翻译： 要解决的问题：提供构成具有相位补偿的CMFB环路的差分放大电路，使得同相输出电位可以稳定地设置为期望的设定电位，并且能够扩展带宽。 解决方案：差分放大电路通过输入跨导体1将电压转换为电流，再次通过在输出部分上构成等效电阻的输出跨导器2将信号电流从电流转换为电压，以设置电压增益的比例 输入和输出跨导值。 用于确定同相输出电位的同相反馈电路3的相位补偿电容C
1 和C 2 连接在二极管连接的MOS的源极 形成输出跨导体2和同相反馈电路3的输出端子的晶体管，而不是差分输出端子。 因此，实现了同相反馈回路的相位补偿，而没有用作差分输出负载的相位补偿电容C 1> SB 2和/ 差分放大电路。 版权所有（C）2006，JPO＆NCIPI -
公开(公告)号：JP2003198275A
公开(公告)日：2003-07-11
申请号：JP2001391911
申请日：2001-12-25
申请人： SANYO ELECTRIC CO
发明人： NAGAMATSU AKIHITO
摘要： PROBLEM TO BE SOLVED: To provide a wide-band amplifier that can improve breakdown resistance and at the same time, can be amplified with low distortion and high gain. SOLUTION: The wide-band amplifier comprises an input transformer 30, where an input signal is added to primary-side winding and an output transformer 31 where an amplified output signal is taken out of a secondary winding, and preamplification circuit 50 that is subjected to cascade connection between the secondary winding of the input transformer 30 and the primary winding of the output transformer 31 and a subsequent stage amplifier circuit 51. A bipolar transistor is used for prestage transistors 53 and 56, that are subjected to the cascade connection of the a prestage amplifier circuit 50, and MESFETs 54 and 57 are used for the post stage transistor. COPYRIGHT: (C)2003,JPO
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公开(公告)号：JP2003188664A
公开(公告)日：2003-07-04
申请号：JP2001388433
申请日：2001-12-20
申请人： KYOCERA CORP
发明人： SAKAMOTO YOSHIHIRO
摘要： PROBLEM TO BE SOLVED: To provide a power amplifier for high frequency which can support high performance and a wide frequency band without an additional circuit, under increasing requests of further high performance and a wide frequency band. SOLUTION: A power amplifier 11 for high frequency comprises a high-frequency transistor Q11, an input-matching circuit 12, an output-matching circuit 13, and a drain microstrip line L12. The output-matching circuit 13 is composed of distributed constant lines L13 divided on the way and a resistor R15 which connects the interval between the divided distributed constant lines L13. By the distributed constant lines L13 divided on the way and the resistor R15 connecting the lines, a parallel circuit 18 is composed. A capacitor element C15 is propagated in the unchanged state at high frequencies, it is propagated through the resistor R15 at low frequencies, and it can be matched to a load resistance connected to an output terminal 17 at both high and low frequencies, thereby enabling further high performance and a wide frequency band to be realized. COPYRIGHT: (C)2003,JPO
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公开(公告)号：JP2003092520A
公开(公告)日：2003-03-28
申请号：JP2001282472
申请日：2001-09-18
发明人： NAKAMURA MORIO , OTA TOSHIMICHI
摘要： PROBLEM TO BE SOLVED: To provide a multistage power amplifier, with which circuit configuration is simplified and gain flatness is improved. SOLUTION: In the cascade connected multistage power amplifier, the amplifier of a final stage is set to obtain desired characteristics closely to the center of a band to be used and the operating band of the amplifier of a driving stage is deviated to compensate lowering of a gain on the low frequency side and high frequency side of the band to be used so that gain flatness can be provided. Thus, since each of amplifiers can be designed into comparatively narrow band, designing is facilitated and circuit configuration can be made simple and compact as well.
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公开(公告)号：JP2003008363A
公开(公告)日：2003-01-10
申请号：JP2001188969
申请日：2001-06-22
申请人： Sanyo Electric Co Ltd , 三洋電機株式会社
发明人： NAGAMATSU AKIHITO
摘要： PROBLEM TO BE SOLVED: To enable hybrid constitution by mounting MESFETs or the like for constituting a wide band amplification circuit on a single layer board.
SOLUTION: This wide band amplification circuit is provided with a first amplification circuit 25 and a second amplification circuit 26 which are push-pull connected between an input transformer 20 and an output transformer 22 and constituted of a plurality of stages of MESFETs 27a, 27b, 28a, 28b, 29a, 29b. A plurality of stages of the MESFETs, wide band blocking inductors 32a, 32b and other chip components are attached on the single layer board. Gate bias wires 30 of the MESFETs are made to pass under the inductors 32a, 32b.
COPYRIGHT: (C)2003,JPO摘要翻译： 要解决的问题：为了通过将用于构成宽带放大电路的MESFET等安装在单层板上来实现混合结构。 解决方案：该宽带放大电路设置有第一放大电路25和第二放大电路26，其被推挽连接在输入变压器20和输出变压器22之间，并由多级MESFET 27a，27b构成， 28a，28b，29a，29b。 多层MESFET，宽带阻塞电感32a，32b和其它芯片组件附接在单层板上。 使MESFET的栅极偏置线30通过电感器32a，32b下方。
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公开(公告)号：JP3360464B2
公开(公告)日：2002-12-24
申请号：JP2412795
申请日：1995-02-13
申请人： 松下電器産業株式会社
CPC分类号： H03F1/3235 , H03F2201/3212 , H03F2201/3218
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公开(公告)号：JP2002359526A
公开(公告)日：2002-12-13
申请号：JP2001163260
申请日：2001-05-30
申请人： HARADA IND CO LTD
摘要： PROBLEM TO BE SOLVED: To maintain high amplification factor in the VHF band and the UHF band, without complicating a circuit. SOLUTION: This amplifier is equipped with an NPN-type transistor Tr11, where a signal received with a television antenna is given to the base via a capacitor C11, the same base is grounded via a resistor R12 and power voltage is applied to the collector via a resistor R15 and the collector and the base are connected with each other via a resistor R13, a resistor R14, a capacitor C12, and the emitter is grounded via a resistor R11, and a transistor Tr12, where the collector of this transistor Tr11 is connected to the base and the power voltage, is applied to the collector via a resistor R16, the same collector is connected with the emitter of the transistor Tr11 via a capacitor C14; and the emitter is grounded via a resistor R17 and the same emitter is connected to an output terminal via a resistor R18 and a capacitor C15.
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公开(公告)号：JP2002319828A
公开(公告)日：2002-10-31
申请号：JP2001122599
申请日：2001-04-20
摘要： PROBLEM TO BE SOLVED: To provide a distortion compensation amplifier that can obtain an excellent compensation characteristic even when the interval of the frequency band of a main carrier wave signal is increased and each band is widened. SOLUTION: A main path is provided with a main amplifier 14 and a phase adjustment circuit 30 and part of a main carrier signal received at an input terminal 11 is given to a distortion compensation circuit 20 via a directional coupler 13. The distortion compensation circuit 20 distributes the main carrier signal into two, separates the signal amplified by the main amplifier 14 into each frequency band, generates a distortion compensation signal by each frequency band and a synthesizer 26 synthesizes the distortion compensation signals. On the other hand, a branching filter 31 of the phase adjustment circuit 30 separates the main carrier signal amplified by the main amplifier 14 into frequency bands and delay circuits 32, 33 adjust the phase of the distortion compensation signals in matching with the delay of the signal in the distortion compensation circuit 20 and a synthesizer 34 synthesizes the separated main carrier signals. A directional coupler 17 receives the signal whose phase is adjusted by the phase adjustment circuit 30 and the distortion compensation signal generated by the distortion compensation circuit 20 to eliminate the distortion component included in the main carrier signal.
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