Radiation-sensitive resin composition

    公开(公告)号:JP5304943B2

    公开(公告)日:2013-10-02

    申请号:JP2012272754

    申请日:2012-12-13

    Abstract: PROBLEM TO BE SOLVED: To provide a radiation-sensitive composition which is excellent in resolution, environmental durability and storage stability as a chemically amplified resist sensitive to active radiations, for example, ultraviolet rays such as g-lines or i-lines, a KrF excimer laser, an ArF excimer laser, an F2 excimer laser, far-ultraviolet rays represented by EUV, electron beams, or the like. SOLUTION: A radiation-sensitive resin composition contains a compound in which one or more hydrogen atoms bonded to a nitrogen atom of a compound having such structure that at least one hydrogen atom is bonded to the nitrogen atom is protected by a specified group. COPYRIGHT: (C)2013,JPO&INPIT

    Radiation-sensitive resin composition

    公开(公告)号:JP5240255B2

    公开(公告)日:2013-07-17

    申请号:JP2010186049

    申请日:2010-08-23

    Abstract: PROBLEM TO BE SOLVED: To provide a radiation-sensitive composition which is excellent in resolution, environmental durability and storage stability as a chemically amplified resist sensitive to active radiation, for example, ultraviolet radiation such as g-line or i-line, far-ultraviolet radiation typified by KrF excimer laser, ArF excimer laser or F2 excimer laser, and EUV (Extreme Ultra Violet), or electron beam or the like. SOLUTION: This radiation-sensitive resin composition contains a compound in which at least one hydrogen atom bonded to a nitrogen atom of a compound having such a structure that at least one hydrogen atom is bonded to the nitrogen atom is protected with a specified group. COPYRIGHT: (C)2011,JPO&INPIT

    Pattern forming method
    53.
    发明专利

    公开(公告)号:JP5239371B2

    公开(公告)日:2013-07-17

    申请号:JP2008028876

    申请日:2008-02-08

    Abstract: PROBLEM TO BE SOLVED: To provide a highly practically usable pattern forming method with which more refined patterns can be easily and efficiently formed, and which can be applied to semiconductor manufacturing processes, and a radio-sensible resin composition used therefor. SOLUTION: A pattern forming method includes: (1) a step of forming a negative type latent image pattern by exposing a resist layer 2 constituted of a radio-sensible resin composition, that becomes alkali-soluble under an exposure amount A and becomes alkali-insoluble or refractory under an exposure amount B (wherein exposure amount A COPYRIGHT: (C)2009,JPO&INPIT

    Fine pattern-forming resin composition and a fine pattern forming method

    公开(公告)号:JP5045759B2

    公开(公告)日:2012-10-10

    申请号:JP2009534325

    申请日:2008-09-24

    Abstract: Disclosed is a resin composition which enables the smooth shrinkage of a resist pattern by heat treatment and can be removed readily by the treatment with an aqueous alkali solution. Specifically disclosed is a resin composition for forming a fine pattern, which is intended to be used for making a fine resist pattern and comprises a resin, a crosslinking component and an alcohol solvent, wherein the resin has a repeating unit (I) having a side chain represented by the formula (1), a repeating unit (II) having a hydroxy group as a side chain and a repeating unit (III) that is a styrene derivative. (1) wherein R, R' and R'' independently represent a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, a hydroxymethyl group, a trifluoromethyl group, or a phenyl group; A represents a single bond, an oxygen atom, a carbonyl group, a carbonyloxy group, or an oxycarbonyl group; B represents a single bond, or a bivalent organic group having 1 to 20 carbon atoms; Rf represents a linear or branched alkyl group having 1 to 8 carbon atoms in which at least one hydrogen atom is substituted by a fluorine atom.

Patent Agency Ranking