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公开(公告)号:JP5304943B2
公开(公告)日:2013-10-02
申请号:JP2012272754
申请日:2012-12-13
Applicant: Jsr株式会社
Abstract: PROBLEM TO BE SOLVED: To provide a radiation-sensitive composition which is excellent in resolution, environmental durability and storage stability as a chemically amplified resist sensitive to active radiations, for example, ultraviolet rays such as g-lines or i-lines, a KrF excimer laser, an ArF excimer laser, an F2 excimer laser, far-ultraviolet rays represented by EUV, electron beams, or the like. SOLUTION: A radiation-sensitive resin composition contains a compound in which one or more hydrogen atoms bonded to a nitrogen atom of a compound having such structure that at least one hydrogen atom is bonded to the nitrogen atom is protected by a specified group. COPYRIGHT: (C)2013,JPO&INPIT
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公开(公告)号:JP5240255B2
公开(公告)日:2013-07-17
申请号:JP2010186049
申请日:2010-08-23
Applicant: Jsr株式会社
IPC: G03F7/039 , G03F7/004 , H01L21/027
Abstract: PROBLEM TO BE SOLVED: To provide a radiation-sensitive composition which is excellent in resolution, environmental durability and storage stability as a chemically amplified resist sensitive to active radiation, for example, ultraviolet radiation such as g-line or i-line, far-ultraviolet radiation typified by KrF excimer laser, ArF excimer laser or F2 excimer laser, and EUV (Extreme Ultra Violet), or electron beam or the like. SOLUTION: This radiation-sensitive resin composition contains a compound in which at least one hydrogen atom bonded to a nitrogen atom of a compound having such a structure that at least one hydrogen atom is bonded to the nitrogen atom is protected with a specified group. COPYRIGHT: (C)2011,JPO&INPIT
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公开(公告)号:JP5239371B2
公开(公告)日:2013-07-17
申请号:JP2008028876
申请日:2008-02-08
Applicant: Jsr株式会社
IPC: H01L21/027 , G03F7/038 , G03F7/039
Abstract: PROBLEM TO BE SOLVED: To provide a highly practically usable pattern forming method with which more refined patterns can be easily and efficiently formed, and which can be applied to semiconductor manufacturing processes, and a radio-sensible resin composition used therefor. SOLUTION: A pattern forming method includes: (1) a step of forming a negative type latent image pattern by exposing a resist layer 2 constituted of a radio-sensible resin composition, that becomes alkali-soluble under an exposure amount A and becomes alkali-insoluble or refractory under an exposure amount B (wherein exposure amount A COPYRIGHT: (C)2009,JPO&INPIT
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公开(公告)号:JP5045759B2
公开(公告)日:2012-10-10
申请号:JP2009534325
申请日:2008-09-24
Applicant: Jsr株式会社
IPC: G03F7/40 , C08F212/14 , C08F220/38 , H01L21/027
CPC classification number: G03F7/40 , C08F214/18 , C08F220/58 , C08F212/14 , C08F2220/387 , C08F220/22
Abstract: Disclosed is a resin composition which enables the smooth shrinkage of a resist pattern by heat treatment and can be removed readily by the treatment with an aqueous alkali solution. Specifically disclosed is a resin composition for forming a fine pattern, which is intended to be used for making a fine resist pattern and comprises a resin, a crosslinking component and an alcohol solvent, wherein the resin has a repeating unit (I) having a side chain represented by the formula (1), a repeating unit (II) having a hydroxy group as a side chain and a repeating unit (III) that is a styrene derivative. (1) wherein R, R' and R'' independently represent a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, a hydroxymethyl group, a trifluoromethyl group, or a phenyl group; A represents a single bond, an oxygen atom, a carbonyl group, a carbonyloxy group, or an oxycarbonyl group; B represents a single bond, or a bivalent organic group having 1 to 20 carbon atoms; Rf represents a linear or branched alkyl group having 1 to 8 carbon atoms in which at least one hydrogen atom is substituted by a fluorine atom.
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公开(公告)号:JP5034950B2
公开(公告)日:2012-09-26
申请号:JP2007550196
申请日:2006-12-13
Applicant: Jsr株式会社
IPC: C08F20/18 , C07C381/12 , C08F20/38
CPC classification number: G03F7/0045 , C07C309/06 , C07C309/19 , C07C381/12 , C07C2602/42 , C08F220/38 , G03F7/0397
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公开(公告)号:JP4665810B2
公开(公告)日:2011-04-06
申请号:JP2006082913
申请日:2006-03-24
Applicant: Jsr株式会社
IPC: G03F7/039 , G03F7/004 , H01L21/027
CPC classification number: G03F7/0045 , G03F7/0392 , Y10S430/114
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公开(公告)号:JP4360264B2
公开(公告)日:2009-11-11
申请号:JP2004135912
申请日:2004-04-30
Applicant: Jsr株式会社
IPC: G03F7/004 , G03F7/039 , G03C1/492 , G03F7/20 , H01L21/027
CPC classification number: G03F7/0045 , G03F7/0392 , Y10S430/106 , Y10S430/115 , Y10S430/121 , Y10S430/127
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