Automatic gain control circuit
    51.
    发明专利

    公开(公告)号:JP5336554B2

    公开(公告)日:2013-11-06

    申请号:JP2011137143

    申请日:2011-06-21

    CPC分类号: H03G1/0023

    摘要: In an automatic gain control circuit, a peak detection circuit detects and outputs the peak voltage of an output signal from a variable gain circuit. An average value detection/output amplitude setting circuit detects the average value voltage of an output signal from the variable gain circuit, and outputs a voltage obtained by adding a voltage with an amplitude 1/2 a desired output amplitude of the variable gain circuit to the average value voltage. An amplification circuit controls the gain of the variable gain circuit by amplifying the difference between the output voltages of the peak detection circuit and average value detection/output amplitude setting circuit and outputting a gain control signal to the variable gain circuit. The number of base-emitter junctions of transistors on a path in the peak detection circuit from input ports which receive output signals from the variable gain circuit to an output port which outputs a voltage to the amplification circuit is equal to the number of base-emitter junctions of transistors on a path in the average value detection/output amplitude setting circuit from input ports which receive output signals from the variable gain circuit to an output port which outputs a voltage to the amplification circuit.

    Differential amplifier, current driver using the same, light emission device and electronic apparatus
    52.
    发明专利
    Differential amplifier, current driver using the same, light emission device and electronic apparatus 有权
    差分放大器,使用其的电流驱动器,发光装置和电子装置

    公开(公告)号:JP2013157929A

    公开(公告)日:2013-08-15

    申请号:JP2012018943

    申请日:2012-01-31

    IPC分类号: H03F3/34 H03F1/30 H03F3/45

    摘要: PROBLEM TO BE SOLVED: To compensate for an offset while suppressing increases in circuit area and current consumption.SOLUTION: A first load transistor ML1 and a second load transistor ML2 are connected to a first input transistor Mi1 and a second input transistor Mi2. A tail current source 504 generates a tail current It proportional to a gate-source threshold voltage Vof a first transistor M31 and feeds a differential pair 502. A first variable resistance Rv1 and a second variable resistance Rv2 are connected between junctions N1, N2 of the differential pair 502 and a current mirror load 506 on one hand and a ground line Lon the other hand.

    摘要翻译: 要解决的问题:为了补偿偏移,同时抑制电路面积和电流消耗的增加。解决方案:第一负载晶体管ML1和第二负载晶体管ML2连接到第一输入晶体管Mi1和第二输入晶体管Mi2。 尾电流源504产生与第一晶体管M31的栅源极阈值电压V成正比的尾电流It,并馈送差分对502.第一可变电阻Rv1和第二可变电阻Rv2连接在第一晶体管M31的接点N1,N2之间 另一方面,一方面是差动对502和电流镜载体506。

    Reference voltage generation circuit
    55.
    发明专利
    Reference voltage generation circuit 有权
    参考电压发生电路

    公开(公告)号:JP2013149197A

    公开(公告)日:2013-08-01

    申请号:JP2012011143

    申请日:2012-01-23

    IPC分类号: G05F3/30 H03F1/30

    CPC分类号: G05F3/16 G05F3/30

    摘要: PROBLEM TO BE SOLVED: To provide a reference voltage generation circuit which is extremely small in temperature dependency.SOLUTION: The reference voltage generation circuit includes: a BGR(Band Gap Reference) circuit for generating a band gap reference voltage; a band gap current generation circuit for generating band gap currents in accordance with the band gap reference voltage; a PTAT(Proportional To Absolute Temperature) current generation circuit for generating currents which are proportional to an absolute temperature; and a linear approximation correction current generation circuit for generating correction currents by comparing currents to be generated by the PTAT current generation circuit 400 with the band gap currents. The BGR circuit adds a correction voltage generated on the basis of the correction currents to the band gap reference voltage.

    摘要翻译: 要解决的问题:提供温度依赖性极小的参考电压产生电路。解决方案:参考电压产生电路包括:用于产生带隙基准电压的BGR(带隙基准)电路; 带隙电流产生电路,用于根据带隙基准电压产生带隙电流; 用于产生与绝对温度成比例的电流的PTAT(比例绝对温度)电流产生电路; 以及线性近似校正电流产生电路,用于通过将由PTAT电流产生电路400产生的电流与带隙电流进行比较来产生校正电流。 BGR电路将基于校正电流产生的校正电压加到带隙基准电压上。

    Semiconductor device, electronic equipment, vehicle, and overheat detection method
    59.
    发明专利
    Semiconductor device, electronic equipment, vehicle, and overheat detection method 审中-公开
    半导体器件,电子设备,车辆和超检测方法

    公开(公告)号:JP2013090153A

    公开(公告)日:2013-05-13

    申请号:JP2011229110

    申请日:2011-10-18

    发明人: MORI KAZUHISA

    IPC分类号: H03F1/30 H01L21/822 H01L27/04

    摘要: PROBLEM TO BE SOLVED: To prevent variation in detection temperatures of an overheat detection circuit.SOLUTION: A voltage A between a first resistor 110 and a first constant-current source 120 and a voltage B between a diode 130 and a second constant-current source 140 are inputted to a comparator 170. In a first leakage current source 150, a drain is connected between the first resistor 110 and the first constant-current source 120, and a source and a gate electrode are connected between the first constant-current source 120 and second wiring 104. In the second leakage current source 160, a drain is connected between first wiring 102 and the diode 130, and a source and a gate electrode are connected between the diode 130 and the second constant-current source 140.

    摘要翻译: 要解决的问题:为了防止过热检测电路的检测温度的变化。 解决方案:第一电阻器110和第一恒流源120之间的电压A和二极管130和第二恒流源140之间的电压B被输入到比较器170.在第一泄漏电流源 如图150所示,在第一电阻器110和第一恒流源120之间连接有漏极,源极和栅电极连接在第一恒流源120和第二布线104之间。在第二漏电流源160中, 漏极连接在第一布线102和二极管130之间,源极和栅电极连接在二极管130和第二恒流源140之间。版权所有:(C)2013,JPO&INPIT